An advanced electrical heating technique for double-sided Y(Gd)BCO coated conductor: gaining high engineering current density based on MOCVD

2021 ◽  
Vol 34 (12) ◽  
pp. 125018
Author(s):  
Fan Yang ◽  
Ruipeng Zhao ◽  
Bowan Tao ◽  
Xi Chen ◽  
Tao Huang ◽  
...  
Keyword(s):  
Current Density ◽  
Electrical Contact ◽  
Chemical Vapor ◽  
Electric Heating ◽  
Deposition Process ◽  
Electrical Heating ◽  
Organic Chemical ◽  
Substrate Thickness ◽  
Electrical Stability ◽  
Heating Device

Abstract An advanced electrical heating technique was proposed and adopted for the reel-to-reel deposition of double-sided Gd x Y1−x Ba2Cu3O7−δ (Y(Gd)BCO) films on the surface of LaMnO3/epitaxial-MgO/IBAD-MgO/Y2O3/Al2O3/Hastelloy tapes based on the metal organic chemical vapor deposition process. In this technique, heating current is introduced into alloy tape to produce heat through the electric brushes. The use of thin Hastelloy tapes is an effective method to obtain a high engineering current density. However, the reduction of the substrate thickness will directly attenuate its mechanical strength, which will lead to the deformation of tapes at high temperature based on original electric heating device. More seriously, the electrical contact between the alloy substrate and the brush will deteriorate, which could cause ignition and ablation at the edge of the tapes. Therefore, in order to improve mechanical and electrical stability, we redesigned a novel electrical heating device to deposit Y(Gd)BCO films. Furthermore, through adopting the multiple-deposition process based on the new electrical heating device, the J e of Y(Gd)BCO film can reach 900 A mm−2 (at self-field, 77 K), which has been significantly improved compared with the J e before optimization.

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

Design and fabrication of carbon fiber/carbonyl iron core–shell structure composites as high-performance microwave absorbers

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8713-8720 ◽  
Author(s):  
Liu Yuan ◽  
Liu Xiangxuan ◽  
Li Rong ◽  
Wen Wu ◽  
Wang Xuanjun
Keyword(s):  
Carbon Fiber ◽  
Shell Structure ◽  
Carbonyl Iron ◽  
High Performance ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Chemical ◽  
Iron Core ◽  
Core Shell ◽  
Core Shell Structure

Carbon fiber/carbonyl iron core–shell structure composites with excellent microwave absorbing performance were prepared by a metal organic chemical vapor deposition process.

Preparation of Porous 4H-SiC by Surface Anodization

2005 ◽  
Vol 483-485 ◽  
pp. 257-260 ◽  
Author(s):  
Yi Chen ◽  
Satoko Shoji ◽  
S. Sugishita ◽  
Satoru Ohshima ◽  
Shigehiro Nishino
Keyword(s):  
Current Density ◽  
Electrochemical Etching ◽  
Broad Band ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Light Region ◽  
The Fourier Transform ◽  
Porous Sic ◽  
Crucial Parameter

The preparation of porous 4H-SiC by electrochemical etching of SiC crystals was investigated. The porous layer was created at the porous SiC (PSC)/SiC interface but not from the SiC/electrolyte interface. The nanopores at the adjacent region of PSC/SiC interface were bigger than those at the top region. In the visible light region, the optical reflectance from PSC exhibits interference fringes. In the Reststrahlen region, the fourier transform infrared (FTIR) reflectance of porous 4H-SiC shows a splitting into more bands: a broad band with high reflectivity at low frequency and several sharp peaks near the LO frequency. The width and shape of FTIR spectra depended on the anodization current density. The anodization current density is a crucial parameter which determined the porosity, porosity depth profile, and the thickness of PSC layers. A pore transformation of porous structure was observed after chemical vapor deposition process.

Improvement in the FF over 0.700 by Controlling the Interface Quality

2009 ◽  
Vol 1165 ◽  
Author(s):  
Katsumi Kushiya ◽  
Y. Tanaka ◽  
H. Hakuma ◽  
S. Kijima ◽  
T. Aramoto ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Chemical ◽  
Surface Layers ◽  
Shunt Resistance ◽  
Interface Quality ◽  
Metal Organic ◽  
The Difference ◽  
Organic Chemical Vapor Deposition ◽  
Mocvd Technique

AbstractIn this study, the pn hetero-interface between Zn(O,S,OH)x buffer and Cu(InGa)(SSe)2 (CIGSS) surface layers is discussed in order to achieve the fill factor (FF) over 0.73 and the circuit efficiency of 16 % on aperture area of over 800 cm2. Two resistances, i.e. shunt resistance (Rsh) and series resistance (Rs), in the circuits are employed as a yardstick to evaluate the interface quality. Since there are no realistic yardsticks on the Rs, the difference between Voc and optimum-power voltage (Vop) (i.e. Voc-Vop [V/cell]) is applied as a simple tool to evaluate the Rs. It is emphasized that it is important to reduce the Rs mainly correlated to the buffer deposition process and, as a result, the interface quality. We consider the Rs is dependent on the remaining Zn(OH)2 concentration in the Zn(O,S,OH)x buffer deposited by a chemical-bath deposition (CBD) technique. As an approach to make the Rs minimize and the Rsh maximize simultaneously, adjusting the thickness of a CBD-Zn(O,S,OH)x buffer layer and a non-doped ZnO layer deposited by a metal-organic chemical vapor deposition (MOCVD) technique has been effective to reduce the remaining Zn(OH)2 concentration. Determining the optimized deposition procedure to achieve the FF over 0.700 consistently, the circuit efficiency of 15.3 % with aperture area of 856 cm2 and the FF of 0.717 has been achieved.

Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

2015 ◽  
Vol 578 ◽  
pp. 180-184 ◽  
Author(s):  
Colin Georgi ◽  
Marko Hapke ◽  
Indre Thiel ◽  
Alexander Hildebrandt ◽  
Thomas Waechtler ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cobalt Complexes ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Half Sandwich

scholarly journals Analytical Model of the Process of Thermal Barrier Coating by the MO CVD Method

Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1390
Author(s):  
Vladimir V. Lukashov ◽  
Asiya E. Turgambaeva ◽  
Igor K. Igumenov
Keyword(s):  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Chemical ◽  
Diffusion Combustion ◽  
Thermal Barrier ◽  
Barrier Coatings ◽  
Cvd Method ◽  
Barrier Coating ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Integral regularities in the growth of 7YSZ thermal barrier coatings during MO CVD (Metal–Organic Chemical Vapor Deposition) are proposed. Within the framework of the model of the reacting boundary layer, the coating deposition process is considered as a process of independent global reactions of diffusion combustion of Zr(dpm)4 and Y(dpm)3 under convection conditions on a permeable surface. The rate of coating growth and the efficiency of using a precursor are analytically evaluated. The correctness of the proposed approach is confirmed by comparison with known experimental data. The considered model can be used to analyze the deposition of coatings from various mixtures of precursors, such as Nd(dpm)3, Hf(dpm)4, and Sm(dpm)3.

Sign in / Sign up

Export Citation Format

Share Document