scholarly journals Effects of van der Waals interactions on the phonon transport properties of tetradymite compounds

Author(s):  
M. K. Li ◽  
C. Y. Sheng ◽  
R. Hu ◽  
Shihao Han ◽  
Hongmei Yuan ◽  
...  
2019 ◽  
Vol 21 (23) ◽  
pp. 12606-12610 ◽  
Author(s):  
Shintaro Fujii ◽  
Haruna Cho ◽  
Yoshifumi Hashikawa ◽  
Tomoaki Nishino ◽  
Yasujiro Murata ◽  
...  

It has been demonstrated that the single-molecule transport properties of fullerene C60 can be modulated by encapsulating endohedral species, i.e. Li+ and H2O, which exhibit different degrees of van der Waals interactions with the C60 cage.


Author(s):  
John H. Taphouse ◽  
Baratunde A. Cola

Forests comprised of nominally vertically aligned carbon nanotubes (CNTs), having outstanding thermal and mechanical properties, are excellent candidates for thermal interface materials (TIMs). However, the thermal performance of CNT forest TIMs has been limited by the presence of high thermal contact resistances at the CNT tip interface. The high thermal contact resistance at the CNT tip interface stems from two sources: (1) the relatively weak van der Waals type bonding, which impedes phonon transport, and (2) low contact area. In this work we will show that common solvents, such as water, can be applied to the CNT forest to increase the contact area and reduce the contact resistance by an average of 75%. Specifically, there are two likely mechanisms that can increase the contact area when a CNT forest is wet with a fluid and compressed in an interface. The first is relaxing the van der Waals interactions between contacting CNTs within the forest, consequently decreasing the stiffness of the forest and allowing it to better conform to the opposing surface. The second is the pulling of CNT tips through capillary interactions into contact with the opposing surface as the solvent evaporates. By measuring the thermal resistance of CNT TIMs before and after soaking in variety of solvents the capacity of each mechanism for reducing the contact resistance is explored.


2019 ◽  
Vol 1 (5) ◽  
pp. 1991-2002 ◽  
Author(s):  
Liang Cao ◽  
Li Yuan ◽  
Ming Yang ◽  
Nisachol Nerngchamnong ◽  
Damien Thompson ◽  
...  

Understanding the influence of structural properties on the electronic structure will pave the way for optimization of charge transport properties of SAM devices.


2000 ◽  
Vol 65 (12) ◽  
pp. 1950-1958 ◽  
Author(s):  
Michal Hušák ◽  
Bohumil Kratochvíl ◽  
Ivana Císařová ◽  
Alexandr Jegorov

Two isomorphous clathrates formed by dihydrocyclosporin A or cyclosporin V with tert-butyl methyl ether are reported and compared with the structures of related P21-symmetry cyclosporin clathrates. The cyclosporin molecules in both structures are associated via van der Waals interactions forming cavities occupied by solvent molecules (cyclosporin : tert-butyl methyl ether is 1 : 2).


2021 ◽  
Vol 154 (12) ◽  
pp. 124306
Author(s):  
Tao Lu ◽  
Daniel A. Obenchain ◽  
Jiaqi Zhang ◽  
Jens-Uwe Grabow ◽  
Gang Feng

2021 ◽  
Vol 8 (1) ◽  
Author(s):  
Woonbae Sohn ◽  
Ki Chang Kwon ◽  
Jun Min Suh ◽  
Tae Hyung Lee ◽  
Kwang Chul Roh ◽  
...  

AbstractTwo-dimensional MoS2 film can grow on oxide substrates including Al2O3 and SiO2. However, it cannot grow usually on non-oxide substrates such as a bare Si wafer using chemical vapor deposition. To address this issue, we prepared as-synthesized and transferred MoS2 (AS-MoS2 and TR-MoS2) films on SiO2/Si substrates and studied the effect of the SiO2 layer on the atomic and electronic structure of the MoS2 films using spherical aberration-corrected scanning transition electron microscopy (STEM) and electron energy loss spectroscopy (EELS). The interlayer distance between MoS2 layers film showed a change at the AS-MoS2/SiO2 interface, which is attributed to the formation of S–O chemical bonding at the interface, whereas the TR-MoS2/SiO2 interface showed only van der Waals interactions. Through STEM and EELS studies, we confirmed that there exists a bonding state in addition to the van der Waals force, which is the dominant interaction between MoS2 and SiO2. The formation of S–O bonding at the AS-MoS2/SiO2 interface layer suggests that the sulfur atoms at the termination layer in the MoS2 films are bonded to the oxygen atoms of the SiO2 layer during chemical vapor deposition. Our results indicate that the S–O bonding feature promotes the growth of MoS2 thin films on oxide growth templates.


Author(s):  
Haohao Sheng ◽  
Haoxiang Long ◽  
Guanzhen Zou ◽  
Dongmei Bai ◽  
Junting Zhang ◽  
...  

2019 ◽  
Vol 3 (7) ◽  
pp. 1462-1470 ◽  
Author(s):  
Weiwei Wei ◽  
Rohit L. Vekariy ◽  
Chuanting You ◽  
Yafei He ◽  
Ping Liu ◽  
...  

Highly dense thin films assembled from cellulose nanofibers and reduced graphene oxide via van der Waals interactions to realize ultrahigh volumetric double-layer capacitances.


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