ABSTRACTThe impact of Si with incident energy Ei (0.1, 1, 5, 10, 20, and 50 eV) and angle θi (0° and 60° from the surface normal) into three model Si surfaces with varying degrees of F coverage (0 ML F, ∼ 1 ML F, and ∼2 ML F) was simulated using classical molecular dynamics (MD). From the simulation results, the probabilities for incident Si reflection and removal of surface Si and F were obtained as a function of Ei, θi, and F surface coverage. In general, these probabilities were observed to depend significantly on these parameters. This result implies that feature evolution simulations require surface reaction models with the necessary functionality in order to make quantitative predictions.
