scholarly journals The growth of hexagonal and cubic GaN on a nano-patterned Si(100) substrate

2020 ◽  
Vol 1697 ◽  
pp. 012099
Author(s):  
V Bessolov ◽  
E Konenkova ◽  
S Konenkov ◽  
S Rodin ◽  
N Seredova
Keyword(s):  
Cubic Gan

Heteroepitaxy of Cubic GaN

1997 ◽  
Vol 7 (12) ◽  
pp. 2309-2316 ◽  
Author(s):  
A. Trampert ◽  
O. Brandt ◽  
H. Yang ◽  
K. H. Ploog
Keyword(s):  
Cubic Gan

Growth of Single-Crystalline Cubic GaN Nanotubes with Rectangular Cross-Sections

2004 ◽  
Vol 16 (16) ◽  
pp. 1465-1468 ◽  
Author(s):  
J. Q. Hu ◽  
Y. Bando ◽  
J. H. Zhan ◽  
F. F. Xu ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
Cross Sections ◽  
Single Crystalline ◽  
Cubic Gan

Morphology of ultra-thin cubic GaN layers on GaAs(1 0 0) grown by MOVPE with DMHy as nitrogen source

2004 ◽  
Vol 222 (1-4) ◽  
pp. 286-292 ◽  
Author(s):  
J. Sormunen ◽  
J. Toivonen ◽  
M. Sopanen ◽  
H. Lipsanen
Keyword(s):  
Nitrogen Source ◽  
Cubic Gan

Growth of cubic GaN quantum dots

2010 ◽  
Author(s):  
T. Schupp ◽  
T. Meisch ◽  
B. Neuschl ◽  
M. Feneberg ◽  
K. Thonke ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Cubic Gan

Long room-temperature electron spin lifetimes in highly doped cubic GaN

2010 ◽  
Vol 97 (6) ◽  
pp. 062101 ◽  
Author(s):  
J. H. Buß ◽  
J. Rudolph ◽  
T. Schupp ◽  
D. J. As ◽  
K. Lischka ◽  
...  
Keyword(s):  
Electron Spin ◽  
Room Temperature ◽  
Cubic Gan ◽  
Temperature Electron

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)

2002 ◽  
Vol 299 (1) ◽  
pp. 79-84 ◽  
Author(s):  
M Xu ◽  
C.X Liu ◽  
H.F Liu ◽  
G.M Luo ◽  
X.M Chen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan ◽  
Gan Film ◽  
Thermal Stability Of

Carbon doping of cubic GaN under gallium-rich growth conditions

2003 ◽  
Vol 0 (7) ◽  
pp. 2537-2540 ◽  
Author(s):  
D. J. As ◽  
D. G. Pacheco-Salazar ◽  
S. Potthast ◽  
K. Lischka
Keyword(s):  
Growth Conditions ◽  
Carbon Doping ◽  
Cubic Gan
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