Effect of absorber layer bandgap of CIGS-based solar cell with (CdS/ZnS) buffer layer

Abstract This article uses computational models to evaluate the potential of copper-indium-gallium-diselenide (CIGS) thin film solar cells. The use of cadmium sulphide (CdS) renders the solar cell environmentally hazardous. A zinc sulphide (ZnS) that is non-toxic and has a large bandgap is studied as a potential replacement for cadmium sulphide in CIGS-based solar cells. The present research focuses on the impact of the CIGS-based solar cell bandgap absorber layer by increasing the absorber layer thickness (0.1-2 μm) using the solar cell simulator simulation tool SCAPS. The basic simulation produces 18.2 % efficiency with a CdS buffer layer, which is 9.95% better than the previously published work. The Simulated efficiency is 22.16% for the CIGS solar cell using ZnS. The simulation of solar cell characteristics of how the thickness of the absorber layer, the gallium grading (efficiency ranges up to 22.25 %) is demonstrated, showing the effect of buffer layer (ZnS) on the current of short-circuit density (JSC), open-circuit voltage (Voc), fill factor (FF), and efficiency (η) of the solar cell.

Download Full-text

Numerical Modeling of CuInxGa(1-x)Se2/WS2 Thin Solar Cell with an Enhanced PCE

International Journal of Renewable Energy Development ◽

10.14710/ijred.2022.38527 ◽

2021 ◽

Vol 11 (2) ◽

pp. 393-401

Author(s):

Youcef Belhadji

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Buffer Layer ◽

Short Circuit ◽

Open Circuit ◽

Limiting Factors ◽

Light Spectrum ◽

Large Area ◽

Cell Parameters ◽

The Impact

Designing thin film solar cells with high and stable output performance under different operating points remains a large area of research. In the context of Chalcopyrite-based solar cells (CuInxGa(1-x)Se2) where the buffer layer is CdS, great progress has been made but research is still underway to optimize their performance. Besides the environmental concerns and limiting factors of CdS material, the use or combination of new materials like ZnS, ZnSe and WS2 as a buffer layer is solicited. Due to these attracted optical and crystallographic properties, Tungsten Disulfide: WS2 is solicited during the last years. Through numerical simulation, we investigate in this work the dc parameters of CuInxGa(1-x)Se2/WS2 solar cell with reduced buffer layer thickness of 30 nm. Considering the presence of neutral and divalent defects in the absorber layer, simulations are performed under the impact of temperature, concentration of charge carriers in WS2 layer and light spectrum change. The divalent defects taken into account are: double donors / acceptors and amphoteric having a Gaussian distribution. For more calculation precision and in order to obtain the desired performance of the solar cell, the impact of series and shunt resistors is also considered. In comparison with results reported in previous works, carried out on the CuInxGa(1-x) Se2/WS2 solar cell, a remarkable improvement in the performance of the solar cell is achieved. When temperature increase by 10K, the short circuit current and open circuit voltage are enhanced by ~0,05mA/cm2 and ~0,0022 respectively. The optimal values of the solar cell parameters obtained in this study are: Jsc≈ 31.0683 (mA/cm2), Voc=1.0173 (V), PCE = 26.72 % and FF=84.54%.

Download Full-text

The absorber and buffer layer thicknesses for CdTe/CdS based thin film solar cell efficiency at various operational temperatures

Indonesian Journal of Electrical Engineering and Computer Science ◽

10.11591/ijeecs.v24.i1.pp70-80 ◽

2021 ◽

Vol 24 (1) ◽

pp. 70

Author(s):

Omar Ghanim Ghazal ◽

Ahmed Waleed Kasim ◽

Nabeel Zuhair Tawfeeq

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Fill Factor ◽

Open Circuit Voltage ◽

Structural Parameters ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Window Layer ◽

The Impact

Cadmium telluride (CdTe)/cadmium sulfide (CdS) solar cell is a promising candidate for photovoltaic (PV) energy production, as fabrication costs are compared by silicon wafers. We include an analysis of CdTe/CdS solar cells while optimizing structural parameters. Solar cell capacitance simulator (SCAPS)-1D 3.3 software is used to analyze and develop energy-efficient. The impact of operating thermal efficiency on solar cells is highlighted in this article to explore the temperature dependence. PV parameters were calculated in the different absorber, buffer, and window layer thicknesses (CdTe, CdS, and SnO2). The effect of the thicknesses of the layers, and the fundamental characteristics of open-circuit voltage, fill factor, short circuit current, and solar energy conversion efficiency were studied. The results showed the thickness of the absorber and buffer layers could be optimized. The temperature had a major impact on the CdTe/CdS solar cells as well. The optimized solar cell has an efficiency performance of >14% when exposed to the AM1.5 G spectrum. CdTe 3000 nm, CdS 50 nm, SnO2 500 nm, and (at) T 300k were the I-V characteristics gave the best conversion open circuit voltage (Voc)=0.8317 volts, short circuit current density (Jsc)=23.15 mA/cm2, fill factor (FF)%=77.48, and efficiency (η)%=14.73. The results can be used to provide important guidance for future work on multi-junction solar cell design.

Download Full-text

Simulation of CZTSSe single solar cells by AFORS-HET software

Tikrit Journal of Pure Science ◽

10.25130/j.v25i2.960 ◽

2020 ◽

Vol 25 (2) ◽

pp. 71

Author(s):

Buthina M. Jandary ◽

Ayed N. Saleh

Keyword(s):

Solar Cell ◽

Short Circuit ◽

Cadmium Sulphide ◽

Short Circuit Current ◽

Open Circuit ◽

Absorber Layer ◽

Buffer Layers ◽

Maximum Efficiency ◽

Blue Wavelength ◽

Photovoltaic Characteristics

In this paper, this sthdy simulated photovoltaic characteristics of single heterojunction solar cell with Cu2ZnSnS4 and Cu2ZnSnSe4 absorber layer numerically using the AFORS-HET program .n-CdS/ZnO double buffer layer is used for hetrostructure interfaces with the absorber layer. The cell performance is investigated against variation of different absorption layer properties such as thickness, carrier concentration. The mixed zinc and cadmium sulphide (Cd1-X Zn X S) is hired as buffer layers and reseach of the effect its thickness. CdS was selected a buffer because it improves the interface with absorbent CZTSSe and has a lofty sending in the blue wavelength. at thickness =1 μm and acceptor concentration (Na=7.9×1015 cm-3) ,a maximum efficiency (η=11.9%) is provided with an open-circuit voltage (Voc=688mv), short-circuit current (Jsc=24.6 mA.cm-2) and fill factor (FF =70.8 of the CZTS solar cell, and Voc=(597 mv), Jsc= (41.7mA.cm-2), FF = (81.2 %) and η= (20.2%) of the CZTSe solar cell. http://dx.doi.org/10.25130/tjps.25.2020.032

Download Full-text

Ultrathin CdTe solar cells with absorber layer thinner than 0.2 microns

The European Physical Journal Applied Physics ◽

10.1051/epjap/2018180146 ◽

2018 ◽

Vol 83 (2) ◽

pp. 20101 ◽

Cited By ~ 1

Author(s):

Min Wang ◽

Xun Li ◽

Deliang Wang

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Absorber Layer ◽

Cdte Solar Cell ◽

Cdte Solar Cells ◽

Different Temperatures ◽

Total Leakage

In this study, ultrathin Cadmium telluride (CdTe) solar cells with absorber thickness from 50 to 200 nm were fabricated. The short-circuit current (JSC) and open-circuit voltage (VOC) were found to decrease significantly with the thickness of absorber layer decreasing. The decrease of the JSC was mainly because of the insufficient light absorption. Even so, the JSC was still found to be 8.2 mA/cm2, which was about 32% of that of a normal CdTe solar cell when the thickness of absorber layer was reduced to ∼1% of that of a normal CdS/CdTe solar cell, i.e. 50 nm. The reasons, which caused the decrease of VOC, were also discussed in this study. The dark current–voltage characteristics were analyzed and the contribution of ohmic shunting current to the total leakage current was found to increase with the thickness of CdTe absorber layer decreasing. The device characteristics of the ultrathin CdTe solar cells under weak light irradiance and at different temperatures were also investigated. This study provides a guideline for the fabrication of ultrathin CdTe solar cells in the future.

Download Full-text

Investigation of Cu(In, Ga)Se2 solar cell performance with non-cadmium buffer layer using TCAD-SILVACO

Materials Science-Poland ◽

10.2478/msp-2018-0054 ◽

2018 ◽

Vol 36 (3) ◽

pp. 514-519

Author(s):

Bechlaghem Sara ◽

Zebentout Baya ◽

Benamara Zineb

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Buffer Layer ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Optical Parameters ◽

Solar Cell Performance ◽

Photovoltaic Parameters

AbstractThe purpose of this work is to achieve the best efficiency of Cu(In, Ga)Se2 solar cells by replacing the CdS buffer layer with other nontoxic materials. The simulation tool used in this study is Silvaco-Atlas package based on digital resolution 2D transport equations governing the conduction mechanisms in semiconductor devices. The J-V characteristics are simulated under AM1.5G illumination. Firstly, we will report the modeling and simulation results of CdS/CIGS solar cell, in comparison with the previously reported experimental results [1]. Secondly, the photovoltaic parameters will be calculated with CdS buffer layer and without any buffer layer to understand its impact on the output parameters of solar cells. The simulation is carried out with the use of electrical and optical parameters chosen judiciously for different buffers (CdS, ZnOS and ZnSe). In comparison to simulated CdS/CIGS, the best photovoltaic parameters have been obtained with ZnOS buffer layer. The structure has almost the same open circuit voltage Voc and fill factor FF, and higher short circuit current density Jsc, which results in slightly higher conversion efficiencies.

Download Full-text

CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽

10.3390/en14061684 ◽

2021 ◽

Vol 14 (6) ◽

pp. 1684

Author(s):

Alessandro Romeo ◽

Elisa Artegiani

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Early Years ◽

Solar Cell Efficiency ◽

Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

Download Full-text

GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽

10.3390/cryst11070726 ◽

2021 ◽

Vol 11 (7) ◽

pp. 726

Author(s):

Ray-Hua Horng ◽

Yu-Cheng Kao ◽

Apoorva Sood ◽

Po-Liang Liu ◽

Wei-Cheng Wang ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Low Temperature ◽

Triple Junction ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Metal Line ◽

Solar Simulator ◽

Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

Download Full-text

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

MRS Proceedings ◽

10.1557/proc-0910-a26-05 ◽

2006 ◽

Vol 910 ◽

Cited By ~ 2

Author(s):

Qi Wang ◽

Matt P. Page ◽

Eugene Iwancizko ◽

Yueqin Xu ◽

Yanfa Yan ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Amorphous Silicon ◽

High Efficiency ◽

Short Circuit ◽

Open Circuit ◽

Layer Growth ◽

Surface Recombination Velocity ◽

Back Contact ◽

P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

Download Full-text

Study of Photoelectrochemical Solar Cell Using WSe2 Crystal

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.665.330 ◽

2013 ◽

Vol 665 ◽

pp. 330-335 ◽

Cited By ~ 1

Author(s):

Ripal Parmar ◽

Dipak Sahay ◽

R.J. Pathak ◽

R.K. Shah

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Fill Factor ◽

Short Circuit ◽

Short Circuit Current ◽

Electrical Energy ◽

Open Circuit ◽

Cell Parameters ◽

Photoelectrochemical Solar Cell ◽

Photoelectrochemical Solar Cells

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.

Download Full-text

Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

International Journal of Photoenergy ◽

10.1155/2021/7506837 ◽

2021 ◽

Vol 2021 ◽

pp. 1-13

Author(s):

F. X. Abomo Abega ◽

A. Teyou Ngoupo ◽

J. M. B. Ndjaka

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Amorphous Silicon ◽

Buffer Layer ◽

Defect Density ◽

Hydrogenated Amorphous Silicon ◽

Theoretical Work ◽

Silicon Based ◽

The Impact ◽

Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13 cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95 mA · c m − 2 , V OC = 0.973 V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Download Full-text