Practical steady-state temperature prediction of active embedded chips into high density electronic board

Based on experimental data, a simple R–C (thermal resistance–heat capacitance) model with software precaution strategies are proposed in this paper to predict the steady-state temperature of the circuit in an electronic packaging in real time. Further developments on the new methodology lead to real time monitoring if input power and/or the environment are changing during operations. It is concluded that the new methodologies, which make the over-temperature prediction much more reliable, efficient, sensible, and faster, can be easily employed for over-temperature protection designs on electronic packaging. [S1043-7398(00)00301-7]

Download Full-text

Analytical thermal modelling of multilayered active embedded chips into high density electronic board

Thermal Science ◽

10.2298/tsci120826072m ◽

2013 ◽

Vol 17 (3) ◽

pp. 695-706 ◽

Cited By ~ 11

Author(s):

Eric Monier-Vinard ◽

Najib Laraqi ◽

Cheikh Dia ◽

Minh Nguyen ◽

Valentin Bissuel

Keyword(s):

Analytical Model ◽

Heat Dissipation ◽

Numerical Models ◽

Organic Substrate ◽

High Density ◽

Thermal Modelling ◽

Disruptive Technology ◽

Printed Wiring Board ◽

Electronic Board ◽

Embedded Chips

The recent Printed Wiring Board embedding technology is an attractive packaging alternative that allows a very high degree of miniaturization by stacking multiple layers of embedded chips. This disruptive technology will further increase the thermal management challenges by concentrating heat dissipation at the heart of the organic substrate structure. In order to allow the electronic designer to early analyze the limits of the power dissipation, depending on the embedded chip location inside the board, as well as the thermal interactions with other buried chips or surface mounted electronic components, an analytical thermal modelling approach was established. The presented work describes the comparison of the analytical model results with the numerical models of various embedded chips configurations. The thermal behaviour predictions of the analytical model, found to be within ?10% of relative error, demonstrate its relevance for modelling high density electronic board. Besides the approach promotes a practical solution to study the potential gain to conduct a part of heat flow from the components towards a set of localized cooled board pads.

Download Full-text

Identification of DC Thermal Steady-State Differential Inductance of Ferrite Power Inductors

Energies ◽

10.3390/en14133854 ◽

2021 ◽

Vol 14 (13) ◽

pp. 3854

Author(s):

Salvatore Musumeci ◽

Luigi Solimene ◽

Carlo Stefano Ragusa

Keyword(s):

Steady State ◽

Input Voltage ◽

Switching Frequency ◽

Ohmic Losses ◽

Steady State Temperature ◽

Wide Range ◽

Average Current ◽

Power Inductors ◽

Saturable Inductor ◽

Thermal Steady State

In this paper, we propose a method for the identification of the differential inductance of saturable ferrite inductors adopted in DC–DC converters, considering the influence of the operating temperature. The inductor temperature rise is caused mainly by its losses, neglecting the heating contribution by the other components forming the converter layout. When the ohmic losses caused by the average current represent the principal portion of the inductor power losses, the steady-state temperature of the component can be related to the average current value. Under this assumption, usual for saturable inductors in DC–DC converters, the presented experimental setup and characterization method allow identifying a DC thermal steady-state differential inductance profile of a ferrite inductor. The curve is obtained from experimental measurements of the inductor voltage and current waveforms, at different average current values, that lead the component to operate from the linear region of the magnetization curve up to the saturation. The obtained inductance profile can be adopted to simulate the current waveform of a saturable inductor in a DC–DC converter, providing accurate results under a wide range of switching frequency, input voltage, duty cycle, and output current values.

Download Full-text