Enhancing the sensitivity of a BIOFET by varying the oxide thickness and nanowire length for water sensing application

Abstract BIOFET is a device which changes the electrostatic potential due to binding of an analyte. Nanotechnology plays a vital role in Biosensor field-effect transistor (BIOFET) by incorporating the Nanowire in the structure. The aim of the project is to improve the sensitivity of a BIOFET by varying the oxide thickness, nanowire length and radius. The sensitivity and Debye length was calculated. The obtained results were analysed and compared by using the SPSS tool.

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CuO Nanoparticles Decorated ZnO Nanorods based Extended-Gate Field-Effect-Transistor (EGFET) for Enzyme-Free Glucose Sensing Application

IEEE Transactions on NanoBioscience ◽

10.1109/tnb.2021.3112539 ◽

2021 ◽

pp. 1-1

Author(s):

Ashwini Kumar Mishra ◽

Deepak Kumar Jarwal ◽

Bratindranath Mukharjee ◽

Satyabrata Jit

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Zno Nanorods ◽

Glucose Sensing ◽

Cuo Nanoparticles ◽

Free Glucose ◽

Effect Transistor ◽

Sensing Application

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STRADDLE-GATE TRANSISTOR: A MOSFET IN THE LIMIT OF USEFUL FIELD-EFFECT

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156400000271 ◽

2000 ◽

Vol 10 (01) ◽

pp. 231-245 ◽

Cited By ~ 3

Author(s):

SANDIP TIWARI ◽

A. KUMAR ◽

J. J. WELSER

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Oxide Thickness ◽

Error Rates ◽

Soft Error ◽

The Other ◽

Power Gain ◽

Virtual Source ◽

Effect Transistor ◽

Output Conductance

For transistor, the limit of usable field-effect is defined by tunneling between the source and the drain - the mechanism that competes with field-effect as device dimensions shrink to near deBroglie wavelength. This is a more fundamental constraint in the operation of a field-effect transistor than random dopants, oxide thickness, doping magnitudes and depth, gate resistivity, soft-error rates, etc. We describe here a MOSFET structure, the straddle-gate transistor, that uses inversion regions as virtual source and drain, operates within the limits placed by the other constraints, and operates at acceptable power levels with good power gain and output conductance at 10 nm channel lenth. Experimental behavior of the straddle geometry are also described to summarized the advantages accrued using electron injection from the thin inversion regions.

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Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

Journal La Multiapp ◽

10.37899/journallamultiapp.v1i2.108 ◽

2020 ◽

Vol 1 (2) ◽

pp. 14-21

Author(s):

Chaw Su Nandar Hlaing Chaw ◽

Thiri Nwe

Keyword(s):

Zinc Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Characteristic Curve ◽

Vital Role ◽

Semiconductor Material ◽

Mathematical Equations ◽

Effect Transistor

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

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