Flexible low–cost infrared photodetector based on SnS thin film grown by chemical bath deposition

In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu 2-x Se thin films on to glass substrate. Different thin films (0.2–0.6 μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that complexing the Cu 2+ ions with TEA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu 2-x Se .

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CdS thin film prepared by shallow chemical bath deposition for low cost CIGS thin film solar cell

2011 37th IEEE Photovoltaic Specialists Conference ◽

10.1109/pvsc.2011.6186510 ◽

2011 ◽

Cited By ~ 1

Author(s):

Wei-Tse Hsu ◽

Chien-Chih Chiang ◽

Tsung-Kai Yeh ◽

Chun-Wen Lan ◽

Song-Yeu Tsai

Keyword(s):

Thin Film ◽

Solar Cell ◽

Chemical Bath Deposition ◽

Thin Film Solar Cell ◽

Low Cost ◽

Cigs Thin Film ◽

Cds Thin Film

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Copper Indium Diselenide thin films using a hybrid method of chemical bath deposition and thermal evaporation

MRS Proceedings ◽

10.1557/opl.2011.1254 ◽

2011 ◽

Vol 1324 ◽

Author(s):

R. Ernesto Ornelas A ◽

Sadasivan Shaji ◽

Omar Arato ◽

David Avellaneda ◽

Alan Castillo ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Chemical Bath Deposition ◽

Low Cost ◽

Secondary Phase ◽

Copper Selenide ◽

Copper Indium Diselenide ◽

Visible Absorption ◽

Copper Indium

ABSTRACTCopper indium diselenide (CIS) based solar cells are one among the promising thin film solar cells. Most of the processes reported for the preparation of CIS directly or indirectly involve Se vapor or H2Se gases which are extremely toxic to health and environment. In this work, we report the preparation of CIS thin films by stacked layers of Glass/In/Se/Cu2Se and Glass/In/Se/Cu2Se/Se. For this, first indium (In) thin film was thermally evaporated on glass substrate on which selenium (Se) and copper selenide (Cu2Se) thin films were deposited sequentially by chemical bath deposition. Selenium thin films were grown from an aqueous solution containing Na2SeSO3 and CH3COOH at room temperature, triple deposition for 7, 7 and 10 min from consecutive baths. Copper selenide thin films were deposited at 35 °C for 1 hour from an aqueous bath containing CuSO4, Na2SeSO3 and NH4OH. Analysis of the X-ray diffraction patterns of the thin films formed at 400 °C from the precursor layer containing extra selenium layer showed the presence of chalcopyrite CuInSe2, without any secondary phase. Morphology of all the samples was analyzed using Scanning Electron Microscopy. Optical band gap was evaluated from the UV-Visible absorption spectra of these films and the values were 1.1 eV and 1 eV respectively for CIS thin films formed at 400 °C from the selenium deficient and selenium rich precursor layers. Electrical characterizations were done using photocurrent measurements. Thus preparation of a CuInSe2 absorber material by a non-toxic selenization process may open up a low cost technique for the fabrication of CIS based solar cells.

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Low-cost TiO 2 /Sb 2 (S, Se) 3 heterojunction thin film solar cell fabricated by sol-gel and chemical bath deposition

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2017.06.006 ◽

2017 ◽

Vol 68 ◽

pp. 76-79 ◽

Cited By ~ 3

Author(s):

Zhezhe Wang ◽

Guilin Chen ◽

Xin Wen ◽

Lin Lin ◽

Zhuohong Feng ◽

...

Keyword(s):

Thin Film ◽

Solar Cell ◽

Chemical Bath Deposition ◽

Thin Film Solar Cell ◽

Low Cost ◽

Sol Gel

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Growth and Structural Properties of ZnO-SWCNTs Produced by Chemical Bath Deposition and Sol-Gel Methods

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.895.460 ◽

2014 ◽

Vol 895 ◽

pp. 460-473 ◽

Cited By ~ 1

Author(s):

Azimah Omar ◽

Abdullah Huda ◽

M.R. Razali ◽

S. Shaari ◽

M.R. Taha

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Thin Films ◽

Carbon Nanotubes ◽

Zinc Oxide ◽

Chemical Bath Deposition ◽

Low Cost ◽

Sol Gel ◽

Cross Sectional ◽

Crystallite Sizes

Two different methods were used to synthesize and fabricate zinc oxide-carbon nanotubes (ZnO-CNTs) thin films; chemical bath deposition (CBD) and sol-gel method. Single-walled carbon nanotubes (SWCNTs) were implemented in preparing the thin films. The obtained thin films were annealed in air at different temperatures levels of 200 °C, 250 °C, 300 °C and 350 °C for 30 min. Both methods successfully grew various nanostructures of ZnO-CNTs such as nanoparticles, nanobranches and nanoflakes. The synthesized nanostructures were characterized by using field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The crystallite sizes were calculated between 38.54 nm and 6.13 nm. FESEM cross sectional images indicated the thin film thicknesses varied from 164.9 μm to 5.84 μm. The TEM images estimated the diameters of the SWCNTs in the range of 3.38 nm to 16.14 nm. TEM images also proved the presence of ZnO entangled between SWCNTs. A combination of ZnO and SWCNTs in the thin film proposes a simple and low cost CBD method to produce various ZnO-CNTs nanostructures with appropriate thickness. Keywords: zinc oxide; carbon nanotubes; nanostructures; thin film ABSTRAK Dua kaedah telah digunakan untuk mensintesiskan serta memfabrikasi filem nipis zink oksida-karbon nanotiub (ZnO-CNTs); kaedah pemendapan kubang kimia (CBD) dan sol-gel. Karbon-nanotiub berdinding satu (SWCNTs) telah digunakan dalam penyediaan filem nipis. Filem nipis yang diperolehi disepuh-lindap melalui udara pada tahap suhu yang berbeza dari 200 °C, 250 °C, 300 °C dan 350 °C selama 30 minit. Kedua-dua kaedah telah berjaya menumbuhkan pelbagai struktur nanoZnO-CNTs seperti nanozarah, nanodahan dan nanokepingan. Pencirian struktur nanoitu dilakukan menggunakan mikroskop elektron imbasan (FESEM), belauan sinar-X (XRD) dan mikroskop electron pancaran (TEM). Saiz kristal yang dikira adalah antara 38.54 nm dan 6.13 nm. Analisis bagi keratan rentas FESEM imej menunjukkan ketebalan filem yang pelbagai dari 164.9 μm sehingga 5.84 μm. Imej TEM menganggarkan diameter karbon nanotiub dalam julat 3.38 nm sehingga 16.14 nm. Imej TEM turut mengesahkan kewujudan ZnO yang melekat di antara CNTs. Kombinasi ZnO dan SWCNTs di dalam filem nipis mencadangkan penggunaan kaedah CBD yang ringkas dan berkos murah untuk menghasilkan pelbagai struktur ZnO-CNTs bersaiz nanodengan ketebalan yang sesuai. Kata-kata kunci: zink oksida; karbon nanotiub; struktur bersaiz nano; filem nipis

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Transmission Electron Microscopy of oriented Co84Cr14Ta2 thin films for longitudinal magnetic recording

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088099 ◽

1991 ◽

Vol 49 ◽

pp. 756-757

Author(s):

T. P. Nolan

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Low Cost ◽

Low Noise ◽

Information Storage ◽

High Coercivity ◽

Magnetic Alloy ◽

Magnetic Media ◽

Transmission Electron

Thin film magnetic media are being used as low cost, high density forms of information storage. The development of this technology requires the study, at the sub-micron level, of morphological, crystallographic, and magnetic properties, throughout the depth of the deposited films. As the microstructure becomes increasingly fine, widi grain sizes approaching 100Å, the unique characterization capabilities of transmission electron microscopy (TEM) have become indispensable to the analysis of such thin film magnetic media.Films were deposited at 225°C, on two NiP plated Al substrates, one polished, and one circumferentially textured with a mean roughness of 55Å. Three layers, a 750Å chromium underlayer, a 600Å layer of magnetic alloy of composition Co84Cr14Ta2, and a 300Å amorphous carbon overcoat were then sputter deposited using a dc magnetron system at a power of 1kW, in a chamber evacuated below 10-6 torr and filled to 12μm Ar pressure. The textured medium is presently used in industry owing to its high coercivity, Hc, and relatively low noise. One important feature is that the coercivity in the circumferential read/write direction is significandy higher than that in the radial direction.

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Characteristics of Zinc Oxide Film Prepared by Chemical Bath Deposition Method

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.602-603.871 ◽

2014 ◽

Vol 602-603 ◽

pp. 871-875

Author(s):

Yen Pei Fu ◽

Jian Jhih Chen

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Chemical Bath Deposition ◽

Deposition Time ◽

Oxide Films ◽

Hexagonal Structure ◽

Zno Films ◽

Zinc Oxide Film ◽

Incident Wavelength ◽

Zinc Oxide Films

In this study, ZnO films, prepared by Chemical Bath Deposition (CBD), are applied as the conductive layers for thin film solar cells. Zinc acetate is used as a source of zinc, and different proportions of ammonia solution are added and well mixed. The growth of zinc oxide films in reaction solutions is taken place at 80°C and then heated to 500°C for one hour. In this study, the different ammonia concentrations and deposition times is controlled. The thin film structure is Hexagonal structure, which is determined by X-ray diffraction spectrometer (XRD) analysis. Scanning electron microscopy (SEM) is used as the observation of surface morphology, the bottom of the film is the interface where the heterogeneous nucleation happens. With the increase of deposition time, there were a few attached zinc oxide particles, which is formed by homogeneous nucleation. According to UV / visible light (UV / Vis) absorption spectrometer transmittance measurements and the relationship between/among the incident wavelength, it can be converted to the energy gaps (Eg), which are about 3.0 to 3.2eV, by using fluorescence spectroscopy analysis. The emission of zinc oxide films has two wavelengths which are located on 510nm and 570nm. According to Based on the all analytic results, the ammonia concentration at 0.05M, and the deposition time is 120 minutes, would obtain the conditions of ZnO films which is more suitable for applications of conductive layer material in thin film solar cell.

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Performance Improvement of ZnSnO Thin-Film Transistors with Low-Temperature Self-Combustion Reaction

Electronics ◽

10.3390/electronics10091099 ◽

2021 ◽

Vol 10 (9) ◽

pp. 1099

Author(s):

Ye-Ji Han ◽

Se Hyeong Lee ◽

So-Young Bak ◽

Tae-Hee Han ◽

Sangwoo Kim ◽

...

Keyword(s):

Thin Film ◽

Photoelectron Spectroscopy ◽

Large Scale ◽

Low Cost ◽

Thermal Analyses ◽

Thin Film Transistor ◽

Sol Gel ◽

Annealing Temperatures ◽

Zinc Tin Oxide ◽

Thermal Limitation

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μsat of 4.72 cm2/V∙s, Vth of −1.28 V, SS of 0.86 V/decade, and ION/OFF of 1.70 × 106 at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.

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