scholarly journals Performance Improvement of ZnSnO Thin-Film Transistors with Low-Temperature Self-Combustion Reaction

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1099
Author(s):  
Ye-Ji Han ◽  
Se Hyeong Lee ◽  
So-Young Bak ◽  
Tae-Hee Han ◽  
Sangwoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Low Cost ◽  
Thermal Analyses ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Annealing Temperatures ◽  
Zinc Tin Oxide ◽  
Thermal Limitation

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μsat of 4.72 cm2/V∙s, Vth of −1.28 V, SS of 0.86 V/decade, and ION/OFF of 1.70 × 106 at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.

Integrated Thin Film Capacitor Arrays Utilizing Sol-Gel Derived Ferroelectrics

1999 ◽  
Vol 596 ◽  
Author(s):  
David Liu ◽  
Steve Makl ◽  
Robert H. Heistand
Keyword(s):  
Thin Film ◽  
Large Scale ◽  
Dielectric Material ◽  
Low Cost ◽  
Sol Gel ◽  
Capacitance Measurement ◽  
Frequency Independent ◽  
Film Dielectric ◽  
Independent Behavior ◽  
Capacitor Arrays

AbstractNiobium-doped lead zircomate titanate (PNZT) thin film dielectric material has been produced on a large scale using a thick-coating sol-gel process. The material has been applied to the fabrication of commercial integrated capacitor array devices. Compared to conventional processes, this low-cost, long-shelf-life procedure had at least a 4-fold processing time enhancement. The specific capacitance of 2500 nF/cm2 and integrated density of over 200 component/cm2 have been demonstrated. The frequency domain capacitance measurement of integrated PNZT capacitors exhibits a frequency-independent behavior up to 2 GHz when a DC bias is applied. Leakage-voltage dependence follows the space-charge-limited-current (SCLC) mechanism. The fabricated integrated capacitor arrays pass the industrial standard of reliability for discrete multilayer capacitors.

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

scholarly journals Violet-light stimulated synaptic and learning functions in a zinc–tin oxide photoelectric transistor for neuromorphic computation

RSC Advances ◽  
2020 ◽  
Vol 10 (70) ◽  
pp. 42682-42687
Author(s):  
Ting-Ruei Lin ◽  
Li-Chung Shih ◽  
Po-Jen Cheng ◽  
Kuan-Ting Chen ◽  
Jen-Sue Chen
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistor ◽  
Violet Light ◽  
Learning Functions ◽  
Zinc Tin Oxide

Photonic potentiation and electric depression are realized in a ZTO thin film transistor for the application in neuromorphic computation.

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Barium Zirconate ◽  
Operating Voltage ◽  
Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

Stability characteristics of gallium-doped zinc-tin-oxide thin-film transistors fabricated using a sol-gel method

2013 ◽  
Vol 62 (8) ◽  
pp. 1176-1182 ◽  
Author(s):  
Jong Hoon Lee ◽  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jae Hoon Park ◽  
Jin Hwa Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Zinc Tin Oxide

scholarly journals Yttrium Doped TiO2 Thin Film for Gas Sensing Application Prepared by Spin Coating Method

2020 ◽  
Author(s):  
M Abdul Kaiyum ◽  
Naim Ahmed ◽  
Arif Alam ◽  
M Shamimur Rahman
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Gas Sensing ◽  
Low Cost ◽  
Pure Titanium ◽  
X Ray ◽  
Sensing Applications ◽  
Coating Method ◽  
Set Up ◽  
Spin Coater

Abstract Yttrium (Y) doped and pure Titanium Di-oxide (TiO2) thin films were prepared by using spin coater. The coater was set up in laboratory with low cost investment. The films were calcined at 450 °C for 1 hour. For characterization, Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray Analysis (EDX), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Atomic Force Microscopy (AFM) were carried out. LCR Bridge - GW Instek LCR-821 was used for gas sensing applications. XPS showed that the change of electronic structure due to Y doping. SEM and AFM analysis were carried out to determine the surface morphology of the films. Yttrium (Y) decreased the crystallite size of the films and increased the surface roughness and porosity value, which was very good for many sensing applications. Gas sensing property of the deposited films were improved by the incorporation of yttrium impurities and the sensing property improved almost two times than pure TiO2 thin film. Different researches have been done their research related to this topic but no one researchers provide a precise explanation of their results, authors of this research have tried to do that. Moreover the films were prepared by a simple spin coater to reduce the production cost also.

Sign in / Sign up

Export Citation Format

Share Document