scholarly journals Comparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structure

2018 ◽  
Vol 5 (9) ◽  
pp. 096413
Author(s):  
Ayten Cantas ◽  
Lutfi Ozyuzer ◽  
Gulnur Aygun
Keyword(s):  
Photoelectron Spectroscopy ◽  
Multilayer Structure ◽  
Depth Profiling ◽  
Ex Situ ◽  
X Ray ◽  
Spectroscopic Ellipsometer ◽  
Profiling Analysis

Ion Beam Study of Early Stages of Growth of GaN films on Sapphire

2002 ◽  
Vol 743 ◽  
Author(s):  
Eugen M. Trifan ◽  
David C. Ingram
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Ex Situ ◽  
Crystallographic Axis ◽  
In Situ Characterization ◽  
X Ray ◽  
Ion Channeling ◽  
Stages Of Growth ◽  
Early Stages

ABSTRACTAn innovative approach for in-situ characterization has been used in this work to investigate the composition, growth mode, morphology and crystalline ordering of the early stages of growth of GaN films grown on sapphire by MOCVD for substrate temperatures in the range of 450°C to 1050°C. We have performed in-situ characterization by Rutherford Backscattering Spectroscopy (RBS), Ion Channeling, X-ray Photoelectron Spectroscopy (XPS), and Low Energy Electron Diffraction. Ex-situ the films have been characterized by Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD) and thickness profilometry. The films have been grown in an in-house designed and build MOCVD reactor that is attached by UHV lines to the analysis facilities. RBS analysis indicated that the films have the correct stoichiometry, have variable thickness and for low substrate temperature completely cover the substrate while for temperatures 850°C and higher islands are formed that may cover as few as 5 percent of the substrate. From Ion Channeling and LEED we have determined the crystallographic phase to be wurtzite. The crystalline quality increases with higher deposition temperature and with thickness. The films are epitaxialy grown with the <0001> crystallographic axis and planes of the GaN films aligned with the sapphire within 0.2 degrees.

Study of Ta as a Diffusion Barrier in Cu/SiO2 Structure

2000 ◽  
Vol 612 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
J. W. Chai ◽  
J. H. Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Depth Profiling ◽  
Oxide Formation ◽  
X Ray ◽  
Chemical States ◽  
The Stability

AbstractTantalum (Ta) thin films of 35 nm thickness were investigated as diffusion barriers as well as adhesion-promoting layers between Cu and SiO2 using X-ray diffractometry (XRD), Scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). After annealing at 600°C for 1h in vacuum, no evidence of interdiffusion was observed. However, XPS depth profiling indicates that elemental Si appears at the Ta/SiO2 interface after annealing. In-situ XPS studies show that the Ta/SiO2 interface was stable until 500°C, but about 32% of the interfacial SiO2 was reduced to elemental Si at 600°C. Upon cooling to room temperature, some elemental Si recombined to form SiO2 again, leaving only 6.5% elemental Si. Comparative studies on the interface chemical states of Cu/SiO2 and Ta/SiO2 indicate that the stability of the Cu/Ta/SiO2/Si system may be ascribed to the strong bonding of Ta and SiO2, due to the reduction of SiO2 through Ta oxide formation.

Depth profiling analysis of HfON on SiON ultrathin films by parallel angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering

2016 ◽  
Vol 48 (7) ◽  
pp. 436-439 ◽  
Author(s):  
Laurent Fauquier ◽  
Bernard Pelissier ◽  
Denis Jalabert ◽  
François Pierre ◽  
Delphine Doloy ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Medium Energy ◽  
Ion Scattering ◽  
X Ray ◽  
Medium Energy Ion Scattering ◽  
Profiling Analysis

Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001)

2006 ◽  
Vol 527-529 ◽  
pp. 1075-1078 ◽  
Author(s):  
Carey M. Tanner ◽  
Jun Lu ◽  
Hans Olof Blom ◽  
Jane P. Chang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Field Effect Transistors ◽  
High Energy ◽  
Oxide Semiconductor ◽  
Ex Situ ◽  
Morphological Properties ◽  
Layer By Layer ◽  
Island Growth ◽  
X Ray

The material properties of HfO2 thin films were studied to evaluate their potential as a high-κ gate dielectric in 4H-SiC power metal-oxide-semiconductor field effect transistors. Stoichiometric HfO2 films were deposited on n-type 4H-SiC (0001) by atomic layer deposition (ALD) at substrate temperatures of 250-450°C. No significant interfacial layer formation was observed by in-situ X-ray photoelectron spectroscopy (XPS) and an abrupt interface was confirmed by high-resolution transmission electron microscopy (HRTEM). A temperature-dependent transition from amorphous layer-by-layer growth to crystalline three-dimensional island growth was identified by in-situ reflection high-energy electron diffraction (RHEED) and ex-situ atomic force microscopy (AFM). X-ray diffraction (XRD) confirmed the presence of monoclinic HfO2 domains in crystallized films.

New approach in the monitoring and characterization of titanium nitride thin films

1999 ◽  
Vol 14 (2) ◽  
pp. 436-441 ◽  
Author(s):  
S. Logothetidis ◽  
E. I. Meletis ◽  
G. Kourouklis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ex Situ ◽  
New Approach ◽  
X Ray ◽  
Plasma Energy

In situ and ex situ spectroscopic ellipsometry (SE), Raman spectroscopy (RS), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) have been used to study the stoichiometry and characterize TiNx thin films deposited by magnetron sputtering at various stoichiometries. In situ SE can provide parameters, such as the plasma energy, that can be utilized for monitoring of the film stoichiometry. Besides plasma energy, optical phonon position in RS was also found to be a sensitive probe of TiNx stoichiometry as detected by RS, XPS, and ex situ SE. Under these conditions, AES faces difficulties for reliable film characterization, and the complementary use of other techniques is required for determining the exact film stoichiometry.

scholarly journals Re-Oxidation of ZnO Clusters Grown on HOPG

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 401
Author(s):  
Carlos Morales ◽  
Adolfo del Campo ◽  
Javier Méndez ◽  
Pilar Prieto ◽  
Leonardo Soriano
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Interaction ◽  
Pyrolytic Graphite ◽  
Ex Situ ◽  
X Ray ◽  
Oxidation Processes ◽  
Two Factors ◽  
Operating Limits ◽  
Zno Clusters

This article studies the chemical interaction between ZnO and highly oriented pyrolytic graphite for as grown and thermally treated samples. In-situ X-ray photoelectron spectroscopy and ex-situ Raman spectroscopy confirm that graphite is affected by these processes, becoming oxidized and defective only in the presence of ZnO clusters that become recrystallized upon thermal re-oxidation processes performed at 400 °C. By comparing these results with other identical experiments performed with ZnO clusters grown on graphene and even with CoO clusters grown on graphite, the present results show how the interaction of the ZnO clusters with graphitic substrates depend on two factors—firstly, the mode of growth and corresponding morphology, and secondly, the reactivity of the graphitic substrates, either graphene or graphite. The results presented here will help us understand the fundamental interactions in ZnO/graphitic heterostructures and to define their operating limits.

scholarly journals The in situ synthesis of PbS nanocrystals from lead(II) n -octylxanthate within a 1,3-diisopropenylbenzene–bisphenol A dimethacrylate sulfur copolymer

2017 ◽  
Vol 4 (8) ◽  
pp. 170383 ◽  
Author(s):  
P. D. McNaughter ◽  
J. C. Bear ◽  
A. G. Mayes ◽  
I. P. Parkin ◽  
P. O'Brien
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Polymer Thin Film ◽  
X Ray ◽  
Pbs Nanocrystals ◽  
Nanocrystal Synthesis ◽  
New Generation

The synthesis of lead sulfide nanocrystals within a solution processable sulfur ‘inverse vulcanization’ polymer thin film matrix was achieved from the in situ thermal decomposition of lead(II) n -octylxanthate, [Pb(S 2 COOct) 2 ]. The growth of nanocrystals within polymer thin films from single-source precursors offers a faster route to networks of nanocrystals within polymers when compared with ex situ routes. The ‘inverse vulcanization’ sulfur polymer described herein contains a hybrid linker system which demonstrates high solubility in organic solvents, allowing solution processing of the sulfur-based polymer, ideal for the formation of thin films. The process of nanocrystal synthesis within sulfur films was optimized by observing nanocrystal formation by X-ray photoelectron spectroscopy and X-ray diffraction. Examination of the film morphology by scanning electron microscopy showed that beyond a certain precursor concentration the nanocrystals formed were not only within the film but also on the surface suggesting a loading limit within the polymer. We envisage this material could be used as the basis of a new generation of materials where solution processed sulfur polymers act as an alternative to traditional polymers.

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