Effect of oxygen vacancies on the resistive switching behavior of hexagonal WO3 nanowire

2019 ◽  
Vol 6 (8) ◽  
pp. 085072
Author(s):  
Wenjun Yang ◽  
Yanling Yin ◽  
Yuehua Peng ◽  
Gang Zhao ◽  
Yahui Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Hexagonal Wo3 Nanowire ◽  
Effect Of Oxygen

Effect of Oxygen Pressure on the Resistive Switching Behavior of Amorphous Pr0.7Ca0.3MnO3 Films

2013 ◽  
Vol 2 (4) ◽  
pp. P35-P37 ◽  
Author(s):  
T.-G. Seong ◽  
K. Bum Choi ◽  
B. Seok Lee ◽  
B.-Y. Kim ◽  
J.-H. Oh ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Pressure ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Effect Of Oxygen

scholarly journals Resistive switching behavior in α-In2Se3 nanoflakes modulated by ferroelectric polarization and interface defects

RSC Advances ◽  
2019 ◽  
Vol 9 (52) ◽  
pp. 30565-30569 ◽  
Author(s):  
Pengfei Hou ◽  
Siwei Xing ◽  
Xin Liu ◽  
Cheng Chen ◽  
Xiangli Zhong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Resistive Switching Behavior ◽  
Free Carriers ◽  
Interface Defects ◽  
Out Of Plane ◽  
Planar Device

A planar device based on an α-In2Se3 nanoflake, in which the in-plane/out-of-plane polarization, free carriers and oxygen vacancies in SiO2 contribute to the resistive switching behavior of the device.

Evidence for the dynamic relaxation behavior of oxygen vacancies in Aurivillius Bi2MoO6 from dielectric spectroscopy during resistance switching

2019 ◽  
Vol 7 (29) ◽  
pp. 8915-8922 ◽  
Author(s):  
Fei Guo ◽  
Mengting Zhao ◽  
Kang Xu ◽  
Yu Huan ◽  
Shuaipeng Ge ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Dielectric Spectroscopy ◽  
Oxygen Vacancies ◽  
Relaxation Behavior ◽  
Switching Behavior ◽  
Dynamic Relaxation ◽  
Resistive Switching Behavior ◽  
Ion Conductor ◽  
Oxygen Ion ◽  
Oxygen Ion Conductor

The resistive switching behavior of oxygen ion conductor Bi2MoO6 were investigated by dielectric spectroscopy.

Unipolar Resistive Switching Behavior Study in CuxO Thin Films at Different Annealing Temperatures

2012 ◽  
Vol 586 ◽  
pp. 24-29
Author(s):  
Ying Li ◽  
Gao Yang Zhao ◽  
Fen Shi
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Surface And Interface ◽  
Behavior Study ◽  
Interface Structures ◽  
Unipolar Resistive Switching

We investigated unipolar resistance switching in CuxO thin films. We studied on the resistive switching behavior associated with the annealing temperature of CuxO thin films and focused on HRTEM, XPS and AFM analyses. In this paper we investigated the surface and interface structures of CuxO films. Results show that there is a mount of oxygen content in the CuxO thin films which is contained in Cu (Ⅱ) oxides and Cu (Ⅰ) oxides. When annealing temperature increases the qualification of oxygen vacancies increase and more oxygen vacancies is connected with top and bottom electrode.

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

2014 ◽  
Vol 6 (19) ◽  
pp. 16537-16544 ◽  
Author(s):  
Kai-De Liang ◽  
Chi-Hsin Huang ◽  
Chih-Chung Lai ◽  
Jian-Shiou Huang ◽  
Hung-Wei Tsai ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior
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