Fully solution-processed InSnO/HfGdOx thin-film transistor for light-stimulated artificial synapse

In recent years, the research interest in brain-inspired light-stimulated artificial synaptic electronic devices has greatly increased, due to their great potential in constructing low-power, high-efficiency, and high-speed neuromorphic computing systems. However, in the field of electronic synaptic device simulation, the development of three-terminal synaptic transistors with low manufacturing cost and excellent memory function still faces huge challenges. Here, a fully solution-processed InSnO/HfGdOx thin film transistor (TFT) is fabricated by a simple and convenient solution process to verify the feasibility of light-stimulated artificial synapses. This experiment investigated the electrical and synaptic properties of the device under light stimulation conditions. The device successfully achieved some important synaptic properties, such as paired-pulse facilitation (PPF), excitatory postsynaptic current (EPSC) and the transition from short-term memory (STM) to long-term memory (LTM). In addition, the device also exhibits brain-like memory and learning behaviors under different colors of light stimulation. This work provides an important strategy for the realization of light-stimulated artificial synapses and may have good applications in the field of artificial neuromorphic computing by light signals in the future.