TEM and STEM-EDS evaluation of metal nanoparticle encapsulation in GroEL/GroES complexes according to the reaction mechanism of chaperonin

Microscopy ◽  
2020 ◽  
Author(s):  
Hiromi Yoda ◽  
Ayumi Koike-Takeshita*
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
Metal Nanoparticle ◽  
Intracellular Protein ◽  
Spectroscopy Analysis ◽  
Au Nps ◽  
X Ray ◽  
Chaperonin Groel ◽  
Transmission Electron ◽  
Scattering Measurements ◽  
Scanning Transmission

Abstract Escherichia coli chaperonin GroEL, which is a large cylindrical protein complex comprising two heptameric rings with cavities of 4.5 nm each in the center, assists in intracellular protein folding with the aid of GroES and adenosine triphosphate (ATP). Here, we investigated the possibility that GroEL can also encapsulate metal nanoparticles (NPs) up to ∼5 nm in diameter into the cavities with the aid of GroES and ATP. The slow ATP-hydrolyzing GroELD52A/D398A mutant, which forms extremely stable complexes with GroES (half-time of ∼6 days), made it possible to analyze GroEL/GroES complexes containing metal NPs. Scanning transmission electron microscopy–energy-dispersive X-ray spectroscopy analysis proved distinctly that FePt NPs and Au NPs were encapsulated in the GroEL/GroES complexes. Dynamic light scattering measurements showed that the NPs in the GroEL/GroES complex were able to maintain their dispersibility in solution. We previously described that the incubation of GroEL and GroES in the presence of ATP·BeFx and adenosine diphosphate·BeFx resulted in the formation of symmetric football-shaped and asymmetric bullet-shaped complexes, respectively. Based on this knowledge, we successfully constructed the football-shaped complex in which two compartments were occupied by Pt or Au NPs (first compartment) and FePt NPs (second compartment). This study showed that metal NPs were sequentially encapsulated according to the GroEL reaction in a step-by-step manner. In light of these results, chaperonin can be used as a tool for handling nanomaterials.

Distribution of Secondary Defects and Electrical Activation after Annealing of Al-Implanted SiC

2015 ◽  
Vol 821-823 ◽  
pp. 407-410 ◽  
Author(s):  
Yukihiro Furukawa ◽  
Hideo Suzuki ◽  
Saburou Shimizu ◽  
Naoyuki Ohse ◽  
Masahide Watanabe ◽  
...  
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
Electrical Characteristics ◽  
Spectroscopy Analysis ◽  
X Ray ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Black Spots ◽  
Scanning Transmission ◽  
Activation Annealing ◽  
The Relationship

We investigated the relationship between secondary defects and electrical characteristics in the activation annealing (1600 °C-1800 °C) of 4H-SiC after Al implantation (3 × 1017cm-3-3 × 1019cm-3). X-ray topography revealed that the dislocation density did not increase after implantation and annealing. Scanning transmission electron microscopy (STEM) images revealed black spots that aggregate with increase in Al dose. The results of energy dispersive X-ray spectroscopy analysis suggested that these black spots are due to the strain of secondary defects. The I-V characteristics at reverse bias of a pin diode fabricated with Al implantation show that secondary defects shown as black spots in the STEM images do not affect the electrical characteristics under the implantation and annealing conditions used in this experiment.

scholarly journals FEI Tecnai G2 F20

2016 ◽  
Vol 2 ◽  
Author(s):  
Martina Luysberg ◽  
Marc Heggen ◽  
Karsten Tillmann
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
Dark Field ◽  
Conventional Imaging ◽  
Electron Loss ◽  
High Angle ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Set Up ◽  
Elemental Maps

The FEI Titan Tecnai G2 F20 is a versatile transmission electron microscope which is equipped with a Gatan Tridiem 863P post column image filter (GIF) and a high angle energy dispersive X-ray (EDX) detector. This set up allows for a variety of experiments such as conventional imaging and diffraction, recording of bright- and dark-field scanning transmission electron microscopy (STEM) images, or acquiring elemental maps extracted from energy electron loss spectra (EELS) or EDX signals.

Core–shell structures with metallic silver as nucleation agent of low expansion phases in BaO/SrO/ZnO/SiO2 glasses

CrystEngComm ◽  
2019 ◽  
Vol 21 (29) ◽  
pp. 4373-4386 ◽  
Author(s):  
Christian Thieme ◽  
Michael Kracker ◽  
Katrin Thieme ◽  
Christian Patzig ◽  
Thomas Höche ◽  
...  
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
Nucleating Agent ◽  
Shell Structures ◽  
Metallic Silver ◽  
X Ray Diffraction ◽  
Nucleation Agent ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Transmission

The role of silver as a nucleating agent in BaO/SrO/ZnO/SiO2 glasses is studied with a range of microstructure-characterization techniques, such as scanning transmission electron microscopy, ultraviolet-visible spectroscopy, and X-ray diffraction.

Redistribution Effects for OMVPE InP/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
OH Tae-IL ◽  
Wallace B. Leigh
Keyword(s):  
Electron Diffraction ◽  
Cross Sections ◽  
Scanning Transmission Electron Microscopy ◽  
Field Investigation ◽  
Second Phase ◽  
X Ray ◽  
Substrate Side ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Scanning Transmission

ABSTRACTWe have analyzed the redistribution parameters for InP grown by organometallic vapor phase epitaxy (OMVPE) on GaAs substrates. The layers, grown using (trimethyl Indium) TMIn at atmospheric pressure, have been characterized for epitaxial quality using photoluminescence, energy dispersed x-ray analysis, and optical microscopy. In order to better understand the effects of inter-diffusion and inter-mixing for the GaAs into the InP epitaxial layer, the layer-substrate interface was first probed by growing consecutive samples of InP for increasingly longer growth times, and thus characterizing the layers as one moves away from the interface. For more detailed analysis, cross-sections of the InP/GaAs interface were prepared for scanning transmission electron microscopy (STEM). Energy dispersed x-ray analysis has shown that all elements In, Ga, As, and P, are present on the epitaxial side of the interface, while only Ga and As are present on the substrate side. A combination of electron diffraction and luminescence measurements show the epitaxy is at least 80% InP at the interface and essentially 100% InP at a distance of 6000Å into the epilayer. Electron diffraction and bright field investigation at the interface show the existence of a second phase, existing in a mostly InP matrix. The effects of redistribution in heteroepitaxial InP/GaAs will be discussed.

scholarly journals MINERALOGICAL AND SPECTROSCOPIC STUDY OF NESQUEHONITE SYNTHESIZED BY REACTION OF GASEOUS CO2 WITH MG CHLORIDE SOLUTION

2017 ◽  
Vol 50 (4) ◽  
pp. 2009
Author(s):  
V. Skliros ◽  
A. Anagnostopoulou ◽  
P. Tsakiridis ◽  
M. Perraki
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
Chloride Solution ◽  
Raw Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Raman Spectroscopic ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Permanent Storage ◽  
Ir And Raman

Nesquehonite, a hydrous carbonate with promising uses such as building raw material and treatment of wastewaters, was synthesized under low pressure conditions by reaction of gaseous CO2 with Mg chloride solution and it was studied by means of X-Ray Diffraction, optical and scanning/transmission electron microscopy, and FTIR and Raman spectroscopic methods. Synthesized nesquehonite forms elongated fibers, exhibiting transparent to translucent diaphaneity and vitreous luster. It is characterized by high crystallinity. IR and Raman spectroscopy indicated the presence of OHand HCO3 - in the crystal structure of nesquehonite. The nesquehonite synthesis described herein constitutes a potential permanent storage of CO2 emissions.

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