Distribution of Secondary Defects and Electrical Activation after Annealing of Al-Implanted SiC

2015 ◽  
Vol 821-823 ◽  
pp. 407-410 ◽  
Author(s):  
Yukihiro Furukawa ◽  
Hideo Suzuki ◽  
Saburou Shimizu ◽  
Naoyuki Ohse ◽  
Masahide Watanabe ◽  
...  

We investigated the relationship between secondary defects and electrical characteristics in the activation annealing (1600 °C-1800 °C) of 4H-SiC after Al implantation (3 × 1017cm-3-3 × 1019cm-3). X-ray topography revealed that the dislocation density did not increase after implantation and annealing. Scanning transmission electron microscopy (STEM) images revealed black spots that aggregate with increase in Al dose. The results of energy dispersive X-ray spectroscopy analysis suggested that these black spots are due to the strain of secondary defects. The I-V characteristics at reverse bias of a pin diode fabricated with Al implantation show that secondary defects shown as black spots in the STEM images do not affect the electrical characteristics under the implantation and annealing conditions used in this experiment.

Microscopy ◽  
2020 ◽  
Author(s):  
Hiromi Yoda ◽  
Ayumi Koike-Takeshita*

Abstract Escherichia coli chaperonin GroEL, which is a large cylindrical protein complex comprising two heptameric rings with cavities of 4.5 nm each in the center, assists in intracellular protein folding with the aid of GroES and adenosine triphosphate (ATP). Here, we investigated the possibility that GroEL can also encapsulate metal nanoparticles (NPs) up to ∼5 nm in diameter into the cavities with the aid of GroES and ATP. The slow ATP-hydrolyzing GroELD52A/D398A mutant, which forms extremely stable complexes with GroES (half-time of ∼6 days), made it possible to analyze GroEL/GroES complexes containing metal NPs. Scanning transmission electron microscopy–energy-dispersive X-ray spectroscopy analysis proved distinctly that FePt NPs and Au NPs were encapsulated in the GroEL/GroES complexes. Dynamic light scattering measurements showed that the NPs in the GroEL/GroES complex were able to maintain their dispersibility in solution. We previously described that the incubation of GroEL and GroES in the presence of ATP·BeFx and adenosine diphosphate·BeFx resulted in the formation of symmetric football-shaped and asymmetric bullet-shaped complexes, respectively. Based on this knowledge, we successfully constructed the football-shaped complex in which two compartments were occupied by Pt or Au NPs (first compartment) and FePt NPs (second compartment). This study showed that metal NPs were sequentially encapsulated according to the GroEL reaction in a step-by-step manner. In light of these results, chaperonin can be used as a tool for handling nanomaterials.


2014 ◽  
Vol 20 (6) ◽  
pp. 1782-1790 ◽  
Author(s):  
Ping Lu ◽  
Eric Romero ◽  
Shinbuhm Lee ◽  
Judith L. MacManus-Driscoll ◽  
Quanxi Jia

AbstractWe report our effort to quantify atomic-scale chemical maps obtained by collecting energy-dispersive X-ray spectra (EDS) using scanning transmission electron microscopy (STEM) (STEM-EDS). With thin specimen conditions and localized EDS scattering potential, the X-ray counts from atomic columns can be properly counted by fitting Gaussian peaks at the atomic columns, and can then be used for site-by-site chemical quantification. The effects of specimen thickness and X-ray energy on the Gaussian peak width are investigated using SrTiO3 (STO) as a model specimen. The relationship between the peak width and spatial resolution of an EDS map is also studied. Furthermore, the method developed by this work is applied to study cation occupancy in a Sm-doped STO thin film and antiphase boundaries (APBs) present within the STO film. We find that Sm atoms occupy both Sr and Ti sites but preferably the Sr sites, and Sm atoms are relatively depleted at the APBs likely owing to the effect of strain.


Author(s):  
Martina Luysberg ◽  
Marc Heggen ◽  
Karsten Tillmann

The FEI Titan Tecnai G2 F20 is a versatile transmission electron microscope which is equipped with a Gatan Tridiem 863P post column image filter (GIF) and a high angle energy dispersive X-ray (EDX) detector. This set up allows for a variety of experiments such as conventional imaging and diffraction, recording of bright- and dark-field scanning transmission electron microscopy (STEM) images, or acquiring elemental maps extracted from energy electron loss spectra (EELS) or EDX signals.


CrystEngComm ◽  
2019 ◽  
Vol 21 (29) ◽  
pp. 4373-4386 ◽  
Author(s):  
Christian Thieme ◽  
Michael Kracker ◽  
Katrin Thieme ◽  
Christian Patzig ◽  
Thomas Höche ◽  
...  

The role of silver as a nucleating agent in BaO/SrO/ZnO/SiO2 glasses is studied with a range of microstructure-characterization techniques, such as scanning transmission electron microscopy, ultraviolet-visible spectroscopy, and X-ray diffraction.


2011 ◽  
Vol 1349 ◽  
Author(s):  
Derrick Mott ◽  
Nguyen T. Mai ◽  
Teruyoshi Sakata ◽  
Mikio Koyano ◽  
Koichi Higashimine ◽  
...  

ABSTRACTNanotechnology is an area of research that is highly intriguing because of the novel properties often observed for materials whose sizes are reduced to the nanoscale. However, one of the biggest challenges is understanding the underlying principles that dictate the particles resulting properties. The atomic level structure for nanoparticles is suspected to vary from that for the corresponding bulk materials, however, direct observation of this phenomenon has proven difficult. Until recently only indirect information on the atomic level structure of such materials could be obtained with techniques such as XRD, HR-TEM, XPS, etc… However, recent advances in Transmission Electron Microscopy techniques now allow true atomic scale resolution, leading to definitive confirmation of the atomic structure. Namely, Scanning Transmission Electron Microscopy coupled with a High-angle Annular Dark Field detector (STEM-HAADF) has been demonstrated to be capable of achieving a nominal resolution of 0.8 nm (the JEOL JEM-ARM200F instrument). The ability is highly exciting because it will lead to an enhanced understanding of the relationship between atomic structure of nanoparticles and the resulting novel properties. In our own study, we focus on the analysis of the atomic level structure for nanoparticles composed of bismuth, antimony and tellurium for thermoelectric materials. This area has recently received much interest because of the realization that nanotechnology can be employed to greatly enhance the efficiency (dimensionless figure of merit ZT) of this class of materials. One of the most intriguing parameters leading to the enhanced TE activity is the relationship between composition and structure that exists within individual nanoparticles. We report our results on a study of the atomic level structure for both nanowires and nanodiscs composed of bismuth, antimony and tellurium. It was found that the nanoparticles have a complex structure that cannot be elucidated by conventional techniques such as XRD or HR-TEM. In addition, by employing Energy Dispersive Spectroscopy (EDS), a greater understanding of the composition-structure dependence was gained. The results are primarily discussed in terms of the atomic level resolution images obtained with the STEM-HAADF technique.


1988 ◽  
Vol 144 ◽  
Author(s):  
OH Tae-IL ◽  
Wallace B. Leigh

ABSTRACTWe have analyzed the redistribution parameters for InP grown by organometallic vapor phase epitaxy (OMVPE) on GaAs substrates. The layers, grown using (trimethyl Indium) TMIn at atmospheric pressure, have been characterized for epitaxial quality using photoluminescence, energy dispersed x-ray analysis, and optical microscopy. In order to better understand the effects of inter-diffusion and inter-mixing for the GaAs into the InP epitaxial layer, the layer-substrate interface was first probed by growing consecutive samples of InP for increasingly longer growth times, and thus characterizing the layers as one moves away from the interface. For more detailed analysis, cross-sections of the InP/GaAs interface were prepared for scanning transmission electron microscopy (STEM). Energy dispersed x-ray analysis has shown that all elements In, Ga, As, and P, are present on the epitaxial side of the interface, while only Ga and As are present on the substrate side. A combination of electron diffraction and luminescence measurements show the epitaxy is at least 80% InP at the interface and essentially 100% InP at a distance of 6000Å into the epilayer. Electron diffraction and bright field investigation at the interface show the existence of a second phase, existing in a mostly InP matrix. The effects of redistribution in heteroepitaxial InP/GaAs will be discussed.


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