scholarly journals Magnetic DNA random access memory with nanopore readouts and exponentially-scaled combinatorial addressing

2021 ◽  
Author(s):  
Billy T Lau ◽  
Shubham Chandak ◽  
Sharmili Roy ◽  
Kedar Tatawadi ◽  
Mary Wootters ◽  
...  

The storage of data in DNA typically involves encoding and synthesizing data into short oligonucleotides, followed by reading with a sequencing instrument. Major challenges include the molecular consumption of synthesized DNA, issues with basecalling errors, and limitations with scaling up read access operations for individual data elements. Addressing these challenges, we describe a DNA storage system called MDRAM (Magnetic DNA-based Random Access Memory) that enables repetitive and efficient readouts of targeted files with nanopore-based sequencing. Through conjugation of synthesized DNA to magnetic beads, we enabled repeated readouts of data while preserving the original DNA analyte and maintaining data readout quality. MDRAM also utilizes an efficient convolutional coding scheme that leverages soft information in raw nanopore sequencing signals to achieve information reading costs comparable to Illumina sequencing despite substantially higher error rates. Finally, we demonstrate a proof-of-concept DNA-based proto-filesystem that enables an exponentially-scalable data address space using only small numbers of targeting primers for assembly and readout.

2008 ◽  
Vol 1129 ◽  
Author(s):  
Dong Jin Jung ◽  
Kinam Kim

AbstractWe demonstrate that ferroelectric memory is very eligible to become a non-volatile cache solution, in particular, in a multimedia storage system such as solid-state disk. It could provide benefits both of performance and of reliability. In performance, a FRAM cache allows us to rid overhead of power-off recovery. Random WRITE performance has been improved by 250%. In assertion of endurance, we investigate acceleration factors to evaluate cycle-to-failure of the ferroelectric memory both in device-level and in capacitor-level. What has been found is that ferroelectric memory cells have 6.0×1014 of the cycle-to-failure at the operational condition of 85 o C and 2.0V. This cycle-to-failure is well above lifetime READ/WRITE cycles of 9.5×1013 in such system. From 2-dimensional stress simulation, it has also been concluded that the number of dummy cells plays a critical role in qualifying the high temperature life tests.


2016 ◽  
Vol 7 ◽  
pp. 1-4 ◽  
Author(s):  
Janusz J. Nowak ◽  
Ray P. Robertazzi ◽  
Jonathan Z. Sun ◽  
Guohan Hu ◽  
Jeong-Heon Park ◽  
...  

Author(s):  
Phil Schani ◽  
S. Subramanian ◽  
Vince Soorholtz ◽  
Pat Liston ◽  
Jamey Moss ◽  
...  

Abstract Temperature sensitive single bit failures at wafer level testing on 0.4µm Fast Static Random Access Memory (FSRAM) devices are analyzed. Top down deprocessing and planar Transmission Electron Microscopy (TEM) analyses show a unique dislocation in the substrate to be the cause of these failures. The dislocation always occurs at the exact same location within the bitcell layout with respect to the single bit failing data state. The dislocation is believed to be associated with buried contact processing used in this type of bitcell layout.


Author(s):  
Ramachandra Chitakudige ◽  
Sarat Kumar Dash ◽  
A.M. Khan

Abstract Detection of both Insufficient Buried Contact (IBC) and cell-to-cell short defects is quite a challenging task for failure analysis in submicron Dynamic Random Access Memory (DRAM) devices. A combination of a well-controlled wet etch and high selectivity poly silicon etch is a key requirement in the deprocessing of DRAM for detection of these types of failures. High selectivity poly silicon etch methods have been reported using complicated system such as ECR (Electron Cyclotron Resonance) Plasma system. The fact that these systems use hazardous gases like Cl2, HBr, and SF6 motivates the search for safer alternative deprocessing chemistries. The present work describes high selectivity poly silicon etch using simple Reactive Ion Etch (RIE) plasma system using less hazardous gases such as CF4, O2 etc. A combination of controlled wet etch and high selectivity poly silicon etch have been used to detect both IBC and cell-to-cell shorts in submicron DRAMs.


Author(s):  
Felix Beaudoin ◽  
Stephen Lucarini ◽  
Fred Towler ◽  
Stephen Wu ◽  
Zhigang Song ◽  
...  

Abstract For SRAMs with high logic complexity, hard defects, design debug, and soft defects have to be tackled all at once early on in the technology development while innovative integration schemes in front-end of the line are being validated. This paper presents a case study of a high-complexity static random access memory (SRAM) used during a 32nm technology development phase. The case study addresses several novel and unrelated fail mechanisms on a product-like SRAM. Corrective actions were put in place for several process levels in the back-end of the line, the middle of the line, and the front-end of the line. These process changes were successfully verified by demonstrating a significant reduction of the Vmax and Vmin nest array block fallout, thus allowing the broader development team to continue improving random defectivity.


2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  

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