scholarly journals Unit-cell determination of epitaxial thin films based on reciprocal-space vectors by high-resolution X-ray diffractometry

2014 ◽  
Vol 47 (1) ◽  
pp. 402-413 ◽  
Author(s):  
Ping Yang ◽  
Huajun Liu ◽  
Zuhuang Chen ◽  
Lang Chen ◽  
John Wang
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Indium Tin Oxide ◽  
Unit Cell ◽  
Reciprocal Space ◽  
Lattice Parameters ◽  
Epitaxial Thin Films ◽  
New Approach ◽  
X Ray ◽  
Space Vectors

A new approach, based on reciprocal-space vectors (RSVs), is developed to determine Bravais lattice types and accurate lattice parameters of epitaxial thin films by high-resolution X-ray diffractometry. The lattice parameters of single-crystal substrates are employed as references to correct the systematic experimental errors of RSVs of thin films. The general procedure is summarized, involving correction of RSVs, derivation of the raw unit cell, and subsequent conversion to the Niggli unit cell and the Bravais unit cell by matrix calculation. Two methods of this procedure are described: in three-dimensional reciprocal space and in six-dimensionalG6space. The estimation of standard error in the lattice parameters derived by this new approach is discussed. The whole approach is illustrated by examples of experimental data. The error of the best result is 0.0006 Å for the lattice parameter of indium tin oxide film. This new RSV method provides a practical and concise route to the crystal structure study of epitaxial thin films and could also be applied to the investigation of surface and interface structures.

High Resolution X-Ray Scattering Studies of Strain in Epitaxial Thin Films of Yttrium Silicide Grown on Silicon(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
L. J. Martinez-Miranda ◽  
M. P. Siegal ◽  
P. A. Heiney ◽  
J. J. Santiago-Aviles ◽  
W. R. Graham
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Grazing Incidence ◽  
Lattice Parameters ◽  
Epitaxial Thin Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Areal Coverage ◽  
Out Of Plane ◽  
Ray Scattering

AbstractWe have used high resolution grazing incidence x-ray scattering (GIXS) to study the in-plane and out-of-plane structure of epitaxial YSi2-x films grown on Si (111), with thicknesses ranging from 85Å to 510Å. Our results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846Å/c = 4.142Å for the 85Å film to a = 3.877Å/c = 4.121Å for the 510Å film. We correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, our measurements show no evidence for the existence of ordered silicon vacancies in the films.

High-resolution x-ray scattering from epitaxial thin films of Y/Nb on Al2O3

2020 ◽  
Vol 32 (37) ◽  
pp. 374006
Author(s):  
A R Wildes ◽  
R C C Ward ◽  
M R Wells ◽  
J P Hill ◽  
R A Cowley
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Epitaxial Thin Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Preparations and Characterizations of Epitaxial SrBi2Ta2O9 Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
Keisuke Saito ◽  
Masatoshi Mitsuya ◽  
Toshimasa Suzuki ◽  
Yuji Nishi ◽  
Masayuki Fujimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Pole Figure ◽  
Lattice Parameter ◽  
Space Mapping ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

AbstractEpitaxial (001)-, (116)- and pseudo (103)-oriented Sr0.35Bi2.2Ta2O9 (SBT (0.35/2.2/2.0)) films were successfully grown on (001), (110) and (111) SrTiO3 substrates, respectively. High-resolution X-ray diffraction reciprocal space mapping (HRXRD-RSM) measurements and pole figure measurements clearly indicated that the (116)-oriented SBT (0.35/2.2/2.0) film consisted of two growth domains those c-axis are separated 180° apart in in-plane and pseudo (103)-oriented SBT film consisted of three growth domains those c-axis are separated 120° apart in in-plane. Moreover, lattice parameter measurements indicated that SBT films grew in fully relaxed state.

High-resolution quantitative X-ray microanalysis of Nb/AI multilayer thin films using the ζ-factor approach

1999 ◽  
Vol 79 (6) ◽  
pp. 1423-1442 ◽  
Author(s):  
G. Lucadamo ◽  
M. Watanabe ◽  
K. Barmak ◽  
D. B. Williams ◽  
C. Michaelsen ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Multilayer Thin Films ◽  
X Ray

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy

1999 ◽  
Vol 567 ◽  
Author(s):  
Z. Yu ◽  
R. Droopad ◽  
J. Ramdani ◽  
J.A. Curless ◽  
C.D. Overgaard ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
State Density ◽  
Unit Cell ◽  
Ex Situ ◽  
Silicon Oxide Layer ◽  
Single Crystalline ◽  
X Ray

ABSTRACTSingle crystalline perovskite oxides such as SrTiO3 (STO) are highly desirable for future generation ULSI applications. Over the past three decades, development of crystalline oxides on silicon has been a great technological challenge as an amorphous silicon oxide layer forms readily on the Si surface when exposed to oxygen preventing the intended oxide heteroepitaxy on Si substrate. Recently, we have successfully grown epitaxial STO thin films on Si(001) surface by using molecular beam epitaxy (MBE) method. Properties of the STO films on Si have been characterized using a variety of techniques including in-situ reflection high energy electron diffraction (RHEED), ex-situ X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). The STO films grown on Si(001) substrate show bright and streaky RHEED patterns indicating coherent two-dimensional epitaxial oxide film growth with its unit cell rotated 450 with respect to the underlying Si unit cell. RHEED and XRD data confirm the single crystalline nature and (001) orientation of the STO films. An X-ray pole figure indicates the in-plane orientation relationship as STO[100]//Si[110] and STO(001)// Si(001). The STO surface is atomically smooth with AFM rms roughness of 1.2 AÅ. The leakage current density is measured to be in the low 10−9 A/cm2 range at 1 V, after a brief post-growth anneal in O2. An interface state density Dit = 4.6 × 1011 eV−1 cm−2 is inferred from the high-frequency and quasi-static C-V characteristics. The effective oxide thickness for a 200 Å STO film is around 30 Å and is not sensitive to post-growth anneal in O2 at 500-700°C. These STO films are also robust against forming gas anneal. Finally, STO MOSFET structures have been fabricated and tested. An extrinsic carrier mobility value of 66 cm2 V−11 s−1 is obtained for an STO PMOS device with a 2 μm effective gate length.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

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