An analytical back-gate bias effect model for ultrathin SOI CMOS devices

IEEE Transactions on Electron Devices ◽

10.1109/16.202788 ◽

1993 ◽

Vol 40 (4) ◽

pp. 755-765 ◽

Author(s):

J. Sim ◽

J.B. Kuo

Keyword(s):

Gate Bias ◽

Bias Effect ◽

Back Gate ◽

Effect Model ◽

Ultrathin Soi ◽

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Back-gate bias effect on the subthreshold behavior and the switching performance in an ultrathin SOI CMOS inverter operating at 77 and 300 K

IEEE Transactions on Electron Devices ◽

10.1109/16.168724 ◽

1992 ◽

Vol 39 (12) ◽

pp. 2781-2790 ◽

Author(s):

J.B. Kuo ◽

W.C. Lee ◽

J.-H. Sim

Keyword(s):

Gate Bias ◽

Cmos Inverter ◽

Bias Effect ◽

Back Gate ◽

Switching Performance ◽

Ultrathin Soi ◽

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A back-gate bias effect model considering the charge accumulation behavior above the field oxide for ultra-thin SOI NMOS devices

Solid-State Electronics ◽

10.1016/0038-1101(92)90194-h ◽

1992 ◽

Vol 35 (11) ◽

pp. 1655-1659 ◽

Author(s):

J.H. Sim ◽

J.B. Kuo

Keyword(s):

Gate Bias ◽

Charge Accumulation ◽

Bias Effect ◽

Back Gate ◽

Effect Model ◽

Field Oxide ◽

Accumulation Behavior

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A fully Analytical Back-Gate Bias Effect Model for n-Channel Silicon Mesefet Devices with Back Channel Implant

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664583 ◽

2005 ◽

Author(s):

J.H. Sim ◽

M.C. Tang ◽

J.B. Kuo

Keyword(s):

Gate Bias ◽

Bias Effect ◽

Back Gate ◽

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Floating-body-correlated subthreshold behavior of SOI NMOS device considering back-gate-bias effect

2015 10th Spanish Conference on Electron Devices (CDE) ◽

10.1109/cde.2015.7087450 ◽

2015 ◽

Author(s):

S. K. Hu ◽

M. M. Ma ◽

J. B. Kuo ◽

Y. J. Chen

Keyword(s):

Floating Body ◽

Gate Bias ◽

Bias Effect ◽

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Back-gate bias effect on partially depleted SOI/MOS back-gate performances under radiation condition

Acta Physica Sinica ◽

10.7498/aps.61.206102 ◽

2012 ◽

Vol 61 (20) ◽

pp. 206102

Author(s):

Zhou Xin-Jie ◽

Li Lei-Lei ◽

Zhou Yi ◽

Luo Jing ◽

Yu Zong-Guang

Keyword(s):

Radiation Condition ◽

Gate Bias ◽

Bias Effect ◽

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A closed-form back-gate-bias related inverse narrow-channel effect model for deep-submicron VLSI CMOS devices using shallow trench isolation

IEEE Transactions on Electron Devices ◽

10.1109/16.830986 ◽

2000 ◽

Vol 47 (4) ◽

pp. 725-733 ◽

Author(s):

Shih-Chia Lin ◽

J.B. Kuo ◽

Kuo-Tai Huang ◽

Shih-Wei Sun

Keyword(s):

Closed Form ◽

Narrow Channel ◽

Deep Submicron ◽

Gate Bias ◽

Back Gate ◽

Shallow Trench Isolation ◽

Channel Effect ◽

Effect Model ◽

Trench Isolation

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Back-gate bias effect on nanosheet hybrid P/N channel of junctionless thin-film transistor with increased Ion versus decreased Ioff

Applied Physics Letters ◽

10.1063/1.4935247 ◽

2015 ◽

Vol 107 (18) ◽

pp. 182105 ◽

Author(s):

Ya-Chi Cheng ◽

Hung-Bin Chen ◽

Chun-Yen Chang ◽

Yi-Kang Wu ◽

Yi-Jia Shih ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Gate Bias ◽

Bias Effect ◽

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Experimental study of back gate bias effect and short channel effect in ultra-thin buried oxide tri-gate nanowire MOSFETs

Solid-State Electronics ◽

10.1016/j.sse.2013.10.005 ◽

2014 ◽

Vol 91 ◽

pp. 123-126

Author(s):

K. Ota ◽

M. Saitoh ◽

C. Tanaka ◽

T. Numata

Keyword(s):

Experimental Study ◽

Gate Bias ◽

Bias Effect ◽

Short Channel ◽

Short Channel Effect ◽

Back Gate ◽

Buried Oxide ◽

Channel Effect ◽

Nanowire Mosfets

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An analytical back gate bias dependent threshold voltage model for SiGe-channel ultrathin SOI PMOS devices

IEEE Transactions on Electron Devices ◽

10.1109/16.249471 ◽

1993 ◽

Vol 40 (12) ◽

pp. 2237-2244 ◽

Author(s):

J.B. Kuo ◽

Mao-Chuan Tang ◽

Jai-Hoon Sim

Keyword(s):

Threshold Voltage ◽

Gate Bias ◽

Back Gate ◽

Ultrathin Soi ◽

Threshold Voltage Model

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Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

Chinese Physics B ◽

10.1088/1674-1056/22/4/047701 ◽

2013 ◽

Vol 22 (4) ◽

pp. 047701

Author(s):

Zhi Zheng ◽

Wei Li ◽

Ping Li

Keyword(s):

Breakdown Voltage ◽

Gate Bias ◽

Bias Effect ◽

Back Gate ◽

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