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Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5-μm range
IEEE Journal of Selected Topics in Quantum Electronics
◽
10.1109/2944.954123
◽
2001
◽
Vol 7
(2)
◽
pp. 149-151
◽
Cited By ~ 37
Author(s):
M.O. Fischer
◽
M. Reinhardt
◽
A. Forchel
Keyword(s):
Room Temperature
◽
Laser Diodes
◽
Gaas Laser
◽
Room Temperature Operation
Download Full-text
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Cited By
References
Room-temperature operation of GaInAsN/GaAs laser diodes in the 1.5 μm range
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)
◽
10.1109/islc.2000.882315
◽
2002
◽
Author(s):
M. Fischer
◽
M. Reinhardt
◽
A. Forchel
Keyword(s):
Room Temperature
◽
Laser Diodes
◽
Gaas Laser
◽
Room Temperature Operation
Download Full-text
Room Temperature Operation of Visible (λ =658.6 nm) InGaAsP DH Laser Diodes on GaAsP
Japanese Journal of Applied Physics
◽
10.1143/jjap.24.l551
◽
1985
◽
Vol 24
(Part 2, No. 7)
◽
pp. L551-L552
◽
Cited By ~ 10
Author(s):
Sadao Fujii
◽
Shiro Sakai
◽
Masayoshi Umeno
Keyword(s):
Room Temperature
◽
Laser Diodes
◽
Room Temperature Operation
Download Full-text
Room temperature operation of TlInGaAs/InP DH laser diodes
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)
◽
10.1109/iciprm.2002.1014615
◽
2003
◽
Cited By ~ 1
Author(s):
H. Asahi
◽
H.J. Lee
◽
A. Mizobata
◽
A. Fujiwara
◽
S. Gonda
Keyword(s):
Room Temperature
◽
Laser Diodes
◽
Room Temperature Operation
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Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition
Applied Physics Letters
◽
10.1063/1.90026
◽
1978
◽
Vol 32
(5)
◽
pp. 295-297
◽
Cited By ~ 125
Author(s):
R. D. Dupuis
◽
P. D. Dapkus
◽
Nick Holonyak
◽
E. A. Rezek
◽
R. Chin
Keyword(s):
Chemical Vapor Deposition
◽
Quantum Well
◽
Vapor Deposition
◽
Room Temperature
◽
Metalorganic Chemical Vapor Deposition
◽
Laser Diodes
◽
Chemical Vapor
◽
Laser Operation
◽
Gaas Laser
◽
Metalorganic Chemical
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Room-temperature operation of GaN-based blue-violet laser diodes fabricated on sapphire substrates using high-temperature-grown single-crystal AlN buffer layers
phys stat sol (a)
◽
10.1002/pssa.200303288
◽
2003
◽
Vol 200
(1)
◽
pp. 126-130
◽
Cited By ~ 1
Author(s):
Yasuo Ohba
◽
Susumu Iida
Keyword(s):
High Temperature
◽
Single Crystal
◽
Room Temperature
◽
Laser Diodes
◽
Buffer Layers
◽
Sapphire Substrates
◽
Aln Buffer
◽
Grown Single Crystal
◽
Room Temperature Operation
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Room-temperature operation of MBE-grown InGaP/InGaAlP MQW visible laser diodes
Electronics Letters
◽
10.1049/el:19860484
◽
1986
◽
Vol 22
(13)
◽
pp. 707
◽
Cited By ~ 9
Author(s):
H. Tanaka
◽
Y. Kawamura
◽
H. Asahi
Keyword(s):
Room Temperature
◽
Laser Diodes
◽
Visible Laser
◽
Room Temperature Operation
Download Full-text
High-power and low-loss room temperature operation of 2.4μm GaInAsSb/AlGaAsSb type-I strained quantum-well laser diodes
10.1117/12.2199252
◽
2015
◽
Author(s):
Yuzhi Song
◽
Jiakun Song
◽
Yu Zhang
◽
Kangwen Li
◽
Yun Xu
◽
...
Keyword(s):
Quantum Well
◽
High Power
◽
Room Temperature
◽
Laser Diodes
◽
Type I
◽
Low Loss
◽
Quantum Well Laser
◽
Strained Quantum Well
◽
Room Temperature Operation
Download Full-text
Continuous room-temperature operation of microdisk laser diodes
Electronics Letters
◽
10.1049/el:19990850
◽
1999
◽
Vol 35
(15)
◽
pp. 1252
◽
Cited By ~ 19
Author(s):
S.M.K. Thiyagarajan
◽
D.A. Cohen
◽
A.F.J. Levi
◽
S. Ryu
◽
R. Li
◽
...
Keyword(s):
Room Temperature
◽
Laser Diodes
◽
Room Temperature Operation
Download Full-text
Low-threshold-current yellow BeZnCdSe quantum-well ridge-waveguide laser diodes under continuous-wave room-temperature operation
Applied Physics Express
◽
10.7567/apex.9.012101
◽
2015
◽
Vol 9
(1)
◽
pp. 012101
◽
Cited By ~ 10
Author(s):
Jijun Feng
◽
Ryoichi Akimoto
Keyword(s):
Quantum Well
◽
Room Temperature
◽
Continuous Wave
◽
Laser Diodes
◽
Threshold Current
◽
Ridge Waveguide
◽
Waveguide Laser
◽
Low Threshold
◽
Ridge Waveguide Laser
◽
Room Temperature Operation
Download Full-text
IVA-4 room-temperature operation of 645-nm AlxGa1-xAs multi-quantum-well laser diodes grown by molecular-beam epitaxy
IEEE Transactions on Electron Devices
◽
10.1109/t-ed.1985.22341
◽
1985
◽
Vol 32
(11)
◽
pp. 2540-2540
Author(s):
H. Iwamura
◽
T. Saku
◽
Y. Hirayama
◽
Y. Suzuki
◽
H. Okamoto
Keyword(s):
Molecular Beam Epitaxy
◽
Quantum Well
◽
Room Temperature
◽
Molecular Beam
◽
Laser Diodes
◽
Quantum Well Laser
◽
Multi Quantum Well
◽
Room Temperature Operation
Download Full-text
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