A silicon carbide CMOS intelligent gate driver circuit with stable operation over a wide temperature range

1999 ◽  
Vol 34 (2) ◽  
pp. 192-204 ◽  
Author(s):  
Jian-Song Chen ◽  
K.T. Kornegay ◽  
Sei-Hyung Ryu
Keyword(s):  
Silicon Carbide ◽  
Wide Temperature Range ◽  
Stable Operation ◽  
Temperature Range ◽  
Driver Circuit ◽  
Gate Driver

scholarly journals Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range

2014 ◽  
Vol 35 (12) ◽  
pp. 1206-1208 ◽  
Author(s):  
Reza Ghandi ◽  
Cheng-Po Chen ◽  
Liang Yin ◽  
Xingguang Zhu ◽  
Liangchun Yu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Wide Temperature Range ◽  
Stable Operation ◽  
Temperature Range

scholarly journals High temperature, Smart Power Module for aircraft actuators

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000069-000074
Author(s):  
Khalil El Falahi ◽  
Stanislas Hascoët ◽  
Cyril Buttay ◽  
Pascal Bevilacqua ◽  
Luong-Viet Phung ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Power Module ◽  
Smart Power ◽  
Temperature Range ◽  
Electric Aircraft ◽  
Gate Driver ◽  
Proper Operation ◽  
More Electric Aircraft

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.

CMOS Circuits on Silicon Carbide for High Temperature Operation

2014 ◽  
Vol 1693 ◽  
Author(s):  
David T. Clark ◽  
Robin F. Thompson ◽  
Aled E. Murphy ◽  
David A. Smith ◽  
Ewan P. Ramsay ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Integrated Circuit ◽  
Elevated Temperatures ◽  
Logic Circuits ◽  
Digital Logic ◽  
Cmos Integrated Circuit ◽  
Temperature Range ◽  
Simple Logic

ABSTRACTWe present the characteristics of a high temperature CMOS integrated circuit process based on 4H silicon carbide designed to operate at temperatures beyond 300°C. N-channel and P-channel transistor characteristics at room and elevated temperatures are presented. Both channel types show the expected low values of field effect mobility well known in SiC MOSFETS. However the performance achieved is easily capable of exploitation in CMOS digital logic circuits and certain analogue circuits, over a wide temperature range.Data is also presented for the performance of digital logic demonstrator circuits, in particular a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. Devices are packaged in high temperature ceramic dual in line (DIL) packages, which are capable of greater than 300°C operation. A high temperature “micro-oven” system has been designed and built to enable testing and stressing of units assembled in these package types. This system heats a group of devices together to temperatures of up to 300°C while keeping the electrical connections at much lower temperatures. In addition, long term reliability data for some structures such as contact chains to n-type and p-type SiC and simple logic circuits is summarized.

New Resonant Gate Driver Circuit for High-Frequency Application of Silicon Carbide MOSFETs

2017 ◽  
Vol 64 (10) ◽  
pp. 8277-8287 ◽  
Author(s):  
Jaya Venkata Phani Sekhar Chennu ◽  
Ramkrishan Maheshwari ◽  
Helong Li
Keyword(s):  
Silicon Carbide ◽  
High Frequency ◽  
Driver Circuit ◽  
Gate Driver ◽  
High Frequency Application

Fibre-optic temperature sensor with wide temperature range characteristics

1987 ◽  
Vol 134 (5) ◽  
pp. 291 ◽  
Author(s):  
K.T.V. Grattan ◽  
J.D. Manwell ◽  
S.M.L. Sim ◽  
C.A. Willson
Keyword(s):  
Wide Temperature Range ◽  
Temperature Sensor ◽  
Fibre Optic ◽  
Temperature Range
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