scholarly journals Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range

2014 ◽  
Vol 35 (12) ◽  
pp. 1206-1208 ◽  
Author(s):  
Reza Ghandi ◽  
Cheng-Po Chen ◽  
Liang Yin ◽  
Xingguang Zhu ◽  
Liangchun Yu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Wide Temperature Range ◽  
Stable Operation ◽  
Temperature Range

CMOS Circuits on Silicon Carbide for High Temperature Operation

2014 ◽  
Vol 1693 ◽  
Author(s):  
David T. Clark ◽  
Robin F. Thompson ◽  
Aled E. Murphy ◽  
David A. Smith ◽  
Ewan P. Ramsay ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Integrated Circuit ◽  
Elevated Temperatures ◽  
Logic Circuits ◽  
Digital Logic ◽  
Cmos Integrated Circuit ◽  
Temperature Range ◽  
Simple Logic

ABSTRACTWe present the characteristics of a high temperature CMOS integrated circuit process based on 4H silicon carbide designed to operate at temperatures beyond 300°C. N-channel and P-channel transistor characteristics at room and elevated temperatures are presented. Both channel types show the expected low values of field effect mobility well known in SiC MOSFETS. However the performance achieved is easily capable of exploitation in CMOS digital logic circuits and certain analogue circuits, over a wide temperature range.Data is also presented for the performance of digital logic demonstrator circuits, in particular a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. Devices are packaged in high temperature ceramic dual in line (DIL) packages, which are capable of greater than 300°C operation. A high temperature “micro-oven” system has been designed and built to enable testing and stressing of units assembled in these package types. This system heats a group of devices together to temperatures of up to 300°C while keeping the electrical connections at much lower temperatures. In addition, long term reliability data for some structures such as contact chains to n-type and p-type SiC and simple logic circuits is summarized.

scholarly journals High temperature, Smart Power Module for aircraft actuators

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000069-000074
Author(s):  
Khalil El Falahi ◽  
Stanislas Hascoët ◽  
Cyril Buttay ◽  
Pascal Bevilacqua ◽  
Luong-Viet Phung ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Power Module ◽  
Smart Power ◽  
Temperature Range ◽  
Electric Aircraft ◽  
Gate Driver ◽  
Proper Operation ◽  
More Electric Aircraft

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.

Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C

2010 ◽  
Vol 645-648 ◽  
pp. 1135-1138 ◽  
Author(s):  
Philip G. Neudeck ◽  
Michael J. Krasowski ◽  
Liang Yu Chen ◽  
Norman F. Prokop
Keyword(s):  
Integrated Circuits ◽  
Logic Gate ◽  
Logic Gates ◽  
Ring Oscillator ◽  
Broad Temperature Range ◽  
Stable Operation ◽  
Cold Temperatures ◽  
Temperature Range ◽  
Circuit Input

The NASA Glenn Research Center has previously reported prolonged stable operation of simple prototype 6H-SiC JFET integrated circuits (logic gates and amplifier stages) for thousands of hours at +500 °C. This paper experimentally investigates the ability of these 6H-SiC JFET devices and integrated circuits to also function at cold temperatures expected to arise in some envisioned applications. Prototype logic gate ICs experimentally demonstrated good functionality down to -125 °C without changing circuit input voltages. Cascaded operation of gates at cold temperatures was verified by externally wiring gates together to form a 3-stage ring oscillator. While logic gate output voltages exhibited little change across the broad temperature range from -125 °C to +500 °C, the change in operating frequency and power consumption of these non-optimized logic gates as a function of temperature was much larger and tracked JFET channel conduction properties.

500°C Silicon Carbide MOSFET-Based Integrated Circuits

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000072-000075 ◽  
Author(s):  
Cheng-Po Chen ◽  
Reza Ghandi ◽  
Liang Yin ◽  
Xingguang Zhu ◽  
Liangchun Yu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
High Temperatures ◽  
Operational Amplifier ◽  
Room Temperature ◽  
Ring Oscillator ◽  
Stable Operation ◽  
Cmos Inverter ◽  
Performance Change

In this work silicon carbide MOSFET based integrated circuits such as operational amplifier. 27-stage ring oscillator and CMOS-based inverter have been designed, fabricated and successfully tested at high temperatures. Silicon carbide MOSFETs remained fully operational from room temperature to 500°C with stable I-V characteristics. Also 27-stage ring oscillator, operational amplifier and CMOS inverter tested and shown to be functional up to 500°C, with relatively small performance change between 300°C and 500°C. High temperature reliability evaluation of these circuits demonstrate stable operation and both the ring oscillator and OpAmp survived more than 100 hours at 500°C.

Fibre-optic temperature sensor with wide temperature range characteristics

1987 ◽  
Vol 134 (5) ◽  
pp. 291 ◽  
Author(s):  
K.T.V. Grattan ◽  
J.D. Manwell ◽  
S.M.L. Sim ◽  
C.A. Willson
Keyword(s):  
Wide Temperature Range ◽  
Temperature Sensor ◽  
Fibre Optic ◽  
Temperature Range

Enabling highly reversible sodium metal cycling across a wide temperature range with dual-salt electrolytes

2021 ◽  
Author(s):  
Akila C. Thenuwara ◽  
Pralav P. Shetty ◽  
Neha Kondekar ◽  
Chuanlong Wang ◽  
Weiyang Li ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
High Energy ◽  
Liquid Electrolyte ◽  
Metal Cycling ◽  
Temperature Range ◽  
Sodium Metal ◽  
Wide Range

A new dual-salt liquid electrolyte is developed that enables the reversible operation of high-energy sodium-metal-based batteries over a wide range of temperatures down to −50 °C.

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