Current-voltage characteristics in a superconducting Bi-2223 tape in the range of very low electric field

2001 ◽  
Vol 11 (1) ◽  
pp. 3935-3938
Author(s):  
E.S. Otabe ◽  
T. Kodama ◽  
M. Fukuda ◽  
T. Matsushita ◽  
K. Itoh
Keyword(s):  
Electric Field ◽  
Current Voltage ◽  
Current Voltage Characteristics

EFFECT OF LIGHT IRRADIATION ON ELECTRIC-FIELD-INDUCED RESISTANCE SWITCHING PHENOMENON IN PLANAR VO2/c-Al2O3 STRUCTURE

2009 ◽  
Vol 08 (01n02) ◽  
pp. 147-150 ◽  
Author(s):  
NURUL EZREENA MOHAMAD ◽  
KUNIO OKIMURA ◽  
JOE SAKAI
Keyword(s):  
Electric Field ◽  
Induced Resistance ◽  
Applied Voltage ◽  
Resistance Switching ◽  
Light Irradiation ◽  
Switching Phenomenon ◽  
Current Voltage ◽  
Jump Phenomena ◽  
Current Voltage Characteristics ◽  
Effect Of Light

A simple device of VO 2 film with two terminal electrodes revealed current jump phenomena at certain applied voltage. In this study, we investigated the effect of light irradiation on the electric field-induced resistance switching phenomenon. Based on changes of current–voltage characteristics under light irradiation, we discussed the effect of light irradiation on this device.

Temperature Dependent Current-Voltage Characteristics in Thin SiO2 Films

1989 ◽  
Vol 159 ◽  
Author(s):  
Jin Zhao ◽  
N. M. Ravindra
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Temperature Dependent ◽  
Sio2 Films ◽  
Breakdown Electric Field ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Nordheim Tunneling

ABSTRACTAn analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics, of very thin films of SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed.

scholarly journals ANALYSIS THE EFFECTS OF FERROELECTRIC ELECTRIC FIELD ON CURRENT-VOLTAGE CHARACTERISTICS OF THE FERROELECTRIC FIELD EFFECT TRANSISTOR USING SRBI2TA2O9 THIN FILM

2020 ◽  
Vol 28 ◽  
Author(s):  
AN NGUYEN VAN ◽  
AN VO XUAN ◽  
HONG THAM LE THI
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor

ANALYSIS THE EFFECTS OF FERROELECTRIC ELECTRIC FIELD ONCURRENT-VOLTAGE CHARACTERISTICS OF THE FERROELECTRICFIELD EFFECT TRANSISTOR USING SRBI2TA2O9 THIN FILM

Investigations of Electrostatic and Ionized Fields Analysis for Dual-Electrode System

2016 ◽  
Vol 3 (1) ◽  
pp. 80
Author(s):  
Mohamed A. Abouelatta ◽  
Abdelhadi R. Salama ◽  
A. M. Omar ◽  
S. A. Ward
Keyword(s):  
Electric Field ◽  
Electrostatic Field ◽  
Simulation Method ◽  
Electrode System ◽  
Charge Simulation Method ◽  
Density Profiles ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ion Current Density ◽  
Good Agreement

<p>The paper presents the computation and measurement of electric field, in both electrostatic as well as ionized case, for dual electrode system intended for electrostatic applications. The dual electrode system consists of an ionizing and non-ionizing electrode have the same voltage and facing a grounded collecting plate. The charge simulation method (CSM) coupled with genetic algorithms (GAs) and method of characteristic (MOC) is applied to compute the electrostatic field and the ionized field respectively. The influence of dual system parameters such as ionized wire diameter and inter electrode distances on the profile of the electrostatic field on the collecting plate and on the surface of the ionizing wire has been studied. The measurements of the ionized electric field, current-voltage characteristics and ion current density profiles are implemented using the technique of the linear biased probe. An experimental setup is constructed to model the present electrode arrangement. The measurements are carried out for ionized wire of diameter 0.25 and 0.5mm. The computed results are found to be in good agreement with experiments.</p>

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