EFFECT OF LIGHT IRRADIATION ON ELECTRIC-FIELD-INDUCED RESISTANCE SWITCHING PHENOMENON IN PLANAR VO2/c-Al2O3 STRUCTURE

2009 ◽  
Vol 08 (01n02) ◽  
pp. 147-150 ◽  
Author(s):  
NURUL EZREENA MOHAMAD ◽  
KUNIO OKIMURA ◽  
JOE SAKAI
Keyword(s):  
Electric Field ◽  
Induced Resistance ◽  
Applied Voltage ◽  
Resistance Switching ◽  
Light Irradiation ◽  
Switching Phenomenon ◽  
Current Voltage ◽  
Jump Phenomena ◽  
Current Voltage Characteristics ◽  
Effect Of Light

A simple device of VO 2 film with two terminal electrodes revealed current jump phenomena at certain applied voltage. In this study, we investigated the effect of light irradiation on the electric field-induced resistance switching phenomenon. Based on changes of current–voltage characteristics under light irradiation, we discussed the effect of light irradiation on this device.

Current-voltage characteristics in a superconducting Bi-2223 tape in the range of very low electric field

2001 ◽  
Vol 11 (1) ◽  
pp. 3935-3938
Author(s):  
E.S. Otabe ◽  
T. Kodama ◽  
M. Fukuda ◽  
T. Matsushita ◽  
K. Itoh
Keyword(s):  
Electric Field ◽  
Current Voltage ◽  
Current Voltage Characteristics

Electrode dependence and film resistivity effect in the electric-field-induced resistance-switching phenomena in epitaxial NiO films

2008 ◽  
Vol 148 (1-3) ◽  
pp. 40-42 ◽  
Author(s):  
T. Ishihara ◽  
I. Ohkubo ◽  
K. Tsubouchi ◽  
H. Kumigashira ◽  
U.S. Joshi ◽  
...  
Keyword(s):  
Electric Field ◽  
Induced Resistance ◽  
Resistance Switching ◽  
Film Resistivity ◽  
Nio Films

Study of the Effect of Metal/Semiconductor Interface Properties on a Resistance Switching Device

2007 ◽  
Vol 997 ◽  
Author(s):  
Manuel Villafuerte ◽  
Silvia P. Heluani ◽  
Gabriel Juárez ◽  
David Comedi ◽  
Gabriel Braunstein ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Electrical Contacts ◽  
X Ray Diffraction ◽  
Semiconductor Interface ◽  
Si Substrates ◽  
Barrier Heights ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Terminal Structure ◽  
Gap States

AbstractN-doped ZnO thin films were deposited by pulsed laser deposition on SiO2/Si substrates. X-ray diffraction analysis revealed that the films had the wurtzite structure, and were highly oriented along the c-axis direction. Au and Al electrical contacts were deposited by sputtering on the top surface of the samples, forming a two-terminal structure in each case. The current-voltage characteristics of the two terminal structure, and the temperature dependence of the resistance switching effect, were studied in the 125-300 K temperature range. The results of these measurements are presented and discussed in terms of the different Schottky barrier heights, as well as in terms of interfacial defect-induced gap states.

Temperature Dependent Current-Voltage Characteristics in Thin SiO2 Films

1989 ◽  
Vol 159 ◽  
Author(s):  
Jin Zhao ◽  
N. M. Ravindra
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Temperature Dependent ◽  
Sio2 Films ◽  
Breakdown Electric Field ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Nordheim Tunneling

ABSTRACTAn analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics, of very thin films of SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed.

Electric field-induced resistance switching in (Bi2O3)0.7(Y2O3)0.3 films

2009 ◽  
Vol 105 (8) ◽  
pp. 083714 ◽  
Author(s):  
L. Shi ◽  
D. S. Shang ◽  
J. R. Sun ◽  
B. G. Shen
Keyword(s):  
Electric Field ◽  
Induced Resistance ◽  
Resistance Switching
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