scholarly journals Unscrambling for Subgap Density-of-States in Multilayered MoS2 Field Effect Transistors under DC Bias Stress via Optical Charge-Pumping Capacitance-Voltage Spectroscopy

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Ga Won Yang ◽  
Seung Gi Seo ◽  
Sungju Choi ◽  
Dae Hwan Kim ◽  
Sung Hun Jin
Keyword(s):  
Density Of States ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Pumping ◽  
Bias Stress ◽  
Capacitance Voltage ◽  
Dc Bias ◽  
Optical Charge

Degradation Process in Pentacene-Based Organic Field-Effect Transistors Evaluated by Three-Terminal Capacitance-Voltage Measurements

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1267-1272 ◽  
Author(s):  
Yuya Tanaka ◽  
Kohei Yamamoto ◽  
Yutaka Noguchi ◽  
Hisao Ishii
Keyword(s):  
Field Effect ◽  
Stress Measurement ◽  
Field Effect Transistors ◽  
Degradation Process ◽  
Hole State ◽  
Organic Field Effect Transistors ◽  
Bias Stress ◽  
Insulator Interface ◽  
Capacitance Voltage ◽  
Trapped Charge

ABSTRACTBy taking advantage of three-terminal capacitance-voltage (TT-CV) measurement, we investigated a formation of trapped charge in pentacene(Pn)-based organic field-effect transistors (OFETs) during the bias stress measurement. The shift of the turn-on voltage in transfer curve correlated well with the increase of trapped charge estimated from TT-CV curves. Moreover, TT-CV measurement revealed that the trapped charges were distributed inhomogeneously at the vicinity of the pentacene/insulator interface, indicating that the current does not obviously affect their formation. Thus we suggested that the trapped charges are formed by keeping Pn molecules as unstable cation (hole state) by the prolonged bias stress.

Suppression of DC bias stress-induced degradation of organic field-effect transistors using postannealing effects

2005 ◽  
Vol 87 (7) ◽  
pp. 073505 ◽  
Author(s):  
Tsuyoshi Sekitani ◽  
Shingo Iba ◽  
Yusaku Kato ◽  
Yoshiaki Noguchi ◽  
Takao Someya ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Bias Stress ◽  
Dc Bias

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

scholarly journals Bias stress effect in polyelectrolyte-gated organic field-effect transistors

2013 ◽  
Vol 102 (11) ◽  
pp. 113306 ◽  
Author(s):  
H. Sinno ◽  
S. Fabiano ◽  
X. Crispin ◽  
M. Berggren ◽  
I. Engquist
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Stress Effect ◽  
Organic Field Effect Transistors ◽  
Bias Stress

Polarization-Dependent Photoinduced Bias-Stress Effect in Single-Crystal Organic Field-Effect Transistors

2017 ◽  
Vol 9 (39) ◽  
pp. 34153-34161 ◽  
Author(s):  
Hyun Ho Choi ◽  
Hikmet Najafov ◽  
Nikolai Kharlamov ◽  
Denis V. Kuznetsov ◽  
Sergei I. Didenko ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Stress Effect ◽  
Organic Field Effect Transistors ◽  
Bias Stress
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