An enhanced 180nm millimeter-wave SiGe BiCMOS technology with fT/fMAX of 260/350GHz for reduced power consumption automotive radar IC's

Author(s):  
J. P. John ◽  
V. P. Trivedi ◽  
J. Kirchgessner ◽  
D. Morgan ◽  
I. To ◽  
...  
2019 ◽  
Vol 30 ◽  
pp. 01006
Author(s):  
Alexander Kozhemyakin ◽  
Ivan Kravchenko

The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz. According to simulation results phase noise is –89.3 dBc/Hz at 1 MHz offset, output power is –5.6 dBm and power consumption is 39 mW from 3.3 V source.


IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 178976-178990
Author(s):  
Federico Alimenti ◽  
Guendalina Simoncini ◽  
Gianluca Brozzetti ◽  
Daniele Dal Maistro ◽  
Marc Tiebout

2011 ◽  
Vol 110-116 ◽  
pp. 5452-5456
Author(s):  
Xiao Bo Xu ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Shan Shan Qin ◽  
Jiang Tao Qu

An analytical expression for collector resistance of a novel vertical SiGe partially-depleted accumulation-subcollector HBT on thin SOI is obtained. Supported by simulation result, the resistance decreases quickly with the increase of substrate-collector bias and improves the transit frequency dramatically. The model is found to be significant in the design and simulation of 0.13 μm millimeter wave SiGe SOI BiCMOS technology.


2019 ◽  
Vol 28 (10) ◽  
pp. 1950167 ◽  
Author(s):  
Jiquan Li ◽  
Yingmei Chen ◽  
Pan Tang ◽  
Zhen Zhang ◽  
Hui Wang ◽  
...  

High-speed, low-power analog-to-digital converter (ADC) is a critical element for 5-GBd, 20-Gb/s digital signal processing (DSP)-based coherent optical communication receiver. To satisfy high data transmission rate requirement of optical receiver, a single-core and open-loop flash ADC with a new proposed multiplexer-based encoder is presented in this paper. Compared with conventional encoder topology, the new proposed topology achieves the fastest encoding speed and lowest power consumption. The optimized distortion is achieved by utilizing a leakage current compensation technique and a local negative feedback method in switched-buffer track-and-hold amplifier (THA). Strict synchronization is obtained for clock signals by careful designing of layout in tree-based clock networks. Furthermore, a master–slave comparator incorporated with a preamplifier reduces signal-dependent kickback noise as well as offset voltage. By using master–slave comparators and proposed encoders, the sampling rate is up to 21.12[Formula: see text]GS/s. The 4-bit, 20-GS/s flash ADC is realized in 0.13-[Formula: see text]m SiGe BiCMOS technology and it only occupies 1.05[Formula: see text]mm[Formula: see text][Formula: see text][Formula: see text]1.46[Formula: see text]mm chip area. With a power consumption of 1.831[Formula: see text]W from 4-V supply, the ADC achieves an effective number of bits (ENOB) of 2.5 at 15[Formula: see text]GS/s.


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