Optimized Design of Ni/GaN Schottky Barrier IMPATT Diode With n-type GaN Deep Level Defects

2021 ◽  
Author(s):  
Xiao-Yu Zhang ◽  
Hu Lei ◽  
Lin Du ◽  
Siwei Ji ◽  
Xiaotong Li ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Deep Level ◽  
Optimized Design ◽  
Impatt Diode

Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode

2013 ◽  
Vol 534 ◽  
pp. 603-608 ◽  
Author(s):  
Koteswara Rao Peta ◽  
Byung-Guon Park ◽  
Sang-Tae Lee ◽  
Moon-Deock Kim ◽  
Jae-Eung Oh ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Schottky Barrier Diode

A High Power Gaas Schottky Barrier Impatt Diode in 30GHZ Band

1973 ◽  
Author(s):  
Masatoshi Migitaka ◽  
Michiharu Nakamura ◽  
Katsutoshi Saito ◽  
Kenji Sekine
Keyword(s):  
Schottky Barrier ◽  
High Power ◽  
Impatt Diode

scholarly journals Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 206
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Pradeep Senanayake ◽  
Jiechen Wu ◽  
Dwight Streit
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Schottky Barrier ◽  
Deep Level ◽  
Depletion Region ◽  
Intrinsic Defect ◽  
Defect State ◽  
Schottky Barrier Diodes ◽  
Defect States ◽  
State Distribution

The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77–340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 × 1016 cm−3 at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.

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