Practical application of transconductance-to-drain-current dependent flicker noise analysis

2016 ◽  
Author(s):  
Jack Ou
Keyword(s):  
Flicker Noise ◽  
Noise Analysis ◽  
Drain Current ◽  
Practical Application

A Unified Explanation of gm/ID-Based Noise Analysis

2014 ◽  
Vol 24 (01) ◽  
pp. 1550010 ◽  
Author(s):  
Jack Ou ◽  
Pietro M. Ferreira
Keyword(s):  
Thermal Noise ◽  
Flicker Noise ◽  
Practical Implication ◽  
Noise Analysis ◽  
Drain Current ◽  
Corner Frequency ◽  
Noise Power ◽  
Noise Power Spectral Density ◽  
Power Spectral ◽  
The Relationship

We present an unified explanation of the transconductance-to-drain current (gm/ID)-based noise analysis in this paper. We show that both thermal noise coefficient (γ) and device noise corner frequency (f co ) are dependent on the gm/ID of a transistor. We derive expressions to demonstrate the relationship between the normalized noise power spectral density technique and the technique based on γ and f co . We conclude this letter with examples to demonstrate the practical implication of our study. Our results show that while both techniques discussed in this letter can be used to compute noise numerically, using γ and f co to separate thermal noise from flicker noise provides additional insight for optimizing noise.

Flicker Noise Analysis of Non-uniform Body TFET with Dual Material Source (NUTFET-DMS)

2021 ◽  
pp. 247-253
Author(s):  
Jagritee Talukdar ◽  
G. Amarnath ◽  
Kavicharan Mummaneni
Keyword(s):  
Flicker Noise ◽  
Noise Analysis ◽  
Material Source ◽  
Dual Material

Experimental Studies of Excess Noise Sources in Concrete Based Materials as a Limiting Factor for Electromagnetic Emission Measurement

2013 ◽  
Vol 592-593 ◽  
pp. 529-532
Author(s):  
Robert Macků ◽  
Pavel Koktavý ◽  
Tomas Trčka ◽  
Vladimir Holcman
Keyword(s):  
Flicker Noise ◽  
Noise Analysis ◽  
Experimental Studies ◽  
Electromagnetic Emission ◽  
Dielectric Materials ◽  
Excess Noise ◽  
Limiting Factor ◽  
Emission Measurement ◽  
Noise Sources ◽  
Geometrical Properties

This paper deals with excess noise sources in dielectric materials. We focus especially on the concrete samples that are frequently tested to ensure information about the reliability and level of degradation. Nevertheless, the testing methods are limited mainly by the proper contact creation, signal detection and noise defined sensitivity. Our efforts are directed to the noise properties assessment. It turns out that the Johnson-Nyquist noise and the 1/f (flicker) noise are generated in the different regions with the different response to the internal or external electric field. In addition the noise analysis is affected by the internal polarization phenomena and the material residual humidity. This issue in connection with the sample geometrical properties and the dielectric noise measurement methodology take part in this paper.

Low Frequency Noise in 4H-SiC MOSFETs

2009 ◽  
Vol 615-617 ◽  
pp. 817-820 ◽  
Author(s):  
Sergey L. Rumyantsev ◽  
Michael S. Shur ◽  
Michael E. Levinshtein ◽  
Pavel A. Ivanov ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Low Frequency ◽  
Drain Current ◽  
Localized States ◽  
Conduction Band Edge ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Channel Mobility ◽  
Strong Inversion ◽  
First Time

Low-frequency noise in 4H-SiC MOSFETs has been measured for the first time. At drain currents varying from deep subthreshold to strong inversion, the 1/f (flicker) noise dominated at frequencies 1 - 105 Hz. The dependence of relative spectral noise density, , on drain current Id (at a constant drain voltage Vd) differs qualitatively from that in Si MOSFETs. In Si MOSFETs, ~ 1/ in strong inversion, whereas tends to saturate in sub-threshold. In 4H-SiC MOSFETs under study, ~ 1/ over the whole range of currents from deep sub-threshold to strong inversion. Similar noise behavior is often observed in poly- or a-Si TFTs. The effective channel mobility in 4H-SiC MOSFETs, 3 - 7 cm2/Vs, is also as low as that in TFTs. Both noise behavior and transport properties of 4H-SiC MOSFETs are explained, analogously to TFTs, by a high density of localized states (bulk and interface) near the conduction band edge in the ion implanted p-well.

scholarly journals Geocenter Variations Assessment using Frequency Analysis and Allan Variance Method

2021 ◽  
Vol 44 ◽  
Author(s):  
Bachir Gourine ◽  
Sofiane Khelifa ◽  
Kamel Hasni ◽  
Farida Bachir Belmehdi
Keyword(s):  
Frequency Analysis ◽  
Flicker Noise ◽  
Noise Analysis ◽  
Allan Variance ◽  
Scale Factor ◽  
Geocenter Motion ◽  
Seasonal Signals ◽  
Periodic Signals ◽  
Geodynamic Models ◽  
Geocenter Variations

The objective of this work is to characterize the signals and noises of Geocenter variations time series obtained from different space geodesy techniques as Global Positioning System (GPS), Doppler Orbitography and Radiopositioning Integrated on Satellite (DORIS), and Satellite Laser Ranging (SLR). The proposed methodology is based on the estimation of periodic signals by performing frequency analysis using FAMOUS software (Frequency Analysis Mapping On Unusual Sampling) and evaluation of level and type of noises by Allan variance technique and Three Corned Hat (TCH) method. The available data concern 13 years (from 1993 to 2006) of weekly series of Geocenter residuals components and scale factor variations, according to ITRF2000. The results estimated are more accurate according to GPS and SLR of about 2-8 mm than DORIS of about 8-42 mm, for Geocenter. Better RMS of scale factor was obtained of about 0.1ppb (0.6mm) for GPS technique than SLR and DORIS with 0.6 and 0.9 ppb (3.6 and 5.4mm), respectively. The estimated seasonal signals amplitudes are in the range of few milimeters per technique with centimetre level for Z Geocenter component of DORIS. The Geocenter motion derived from SLR technique is more accurate and close to the geodynamic models. The noise analysis shows a dominant white noise in the   SLR and DORIS Geocenter solutions at a level of 0.6-1 mm and 10-40 mm, respectively. However, the GPS solution is characterized by a flicker noise at millimetre level, relating to mismodeling systematic errors.  

Flicker Noise Analysis on Chopper Amplifier

2021 ◽  
Author(s):  
Ting Zhou ◽  
Zhuo Gao ◽  
Jiajie Huang ◽  
Yewangqing Lu ◽  
Mingyi Chen ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Noise Analysis ◽  
Chopper Amplifier

IMPACT OF GATE POLYSILICON INTERFACE ON CARRIER TRAPPING LOW FREQUENCY NOISE IN ADVANCED MOSFET'S

2006 ◽  
Vol 06 (04) ◽  
pp. L427-L432 ◽  
Author(s):  
G. GHIBAUDO ◽  
J. JOMAAH ◽  
F. BALESTRA
Keyword(s):  
Noise Analysis ◽  
Low Frequency ◽  
Drain Current ◽  
Oxide Thickness ◽  
Frequency Noise ◽  
Oxide Interface ◽  
Carrier Trapping ◽  
Noise Characteristics ◽  
Input Gate ◽  
The Impact

In this work, we calculate, for the first time, the impact of carrier trapping at the gate polysilicon/oxide interface on the LF noise characteristics of polygate MOSFET's. After extending the channel LF noise analysis, based on carrier number and correlated mobility fluctuations approaches, to include charge variations at the polySi/oxide interface, we derive analytical expressions accounting for the impact of fluctuations of poly/oxide interfacial charge on the channel drain current and input gate voltage noise as a function of gate bias, polysilicon doping concentration and gate oxide thickness.

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