Improvement in electrical properties of CVD graphene on low temperature pulsed laser deposited boron nitride on SiO2/Si substrate

2015 ◽  
Author(s):  
Md Ahsan Uddin ◽  
Nicholas Glavin ◽  
Amol Singh ◽  
R. Naguy ◽  
Michael Jespersen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Boron Nitride ◽  
Pulsed Laser ◽  
Si Substrate ◽  
Cvd Graphene

Mobility enhancement in graphene transistors on low temperature pulsed laser deposited boron nitride

2015 ◽  
Vol 107 (20) ◽  
pp. 203110 ◽  
Author(s):  
Md Ahsan Uddin ◽  
Nicholas Glavin ◽  
Amol Singh ◽  
Rachel Naguy ◽  
Michael Jespersen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Boron Nitride ◽  
Pulsed Laser

scholarly journals Growth of n-Ga doped ZnO nanowires interconnected with disks over p-Si substrate and their heterojunction diode application

2020 ◽  
Vol 10 (1) ◽  
pp. 21-28
Author(s):  
Yas Al-Hadeethi ◽  
Rashad I. Badran ◽  
Ahmad Umar ◽  
Saleh. H. Al-Heniti ◽  
Bahaaudin M. Raffah ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Morphological Characteristics ◽  
Zno Nanowires ◽  
Heterojunction Diode ◽  
Si Substrate ◽  
Voltage Range ◽  
Doped Zno ◽  
Electrical Characterizations ◽  
Excellent Stability

In this paper, the heterojunction diode based on n-Ga doped ZnO nanowires interconnected with disks/p-Si assembly was fabricated and their low-temperature electrical properties were examined. The Ga-doped ZnO nanowires interconnected with disks were grown over p-Si substrate and studied by numerous techniques to understand the structural, compositional and morphological characteristics. Electrical properties, at lowtemperatures ranging from 77 K–295 K, were examined for the fabricated heterojunction diode assembly both in reverse and forward biased conditions which exhibited an excellent stability over all the temperature range. The detailed electrical characterizations revealed that the current decreases gradually from 1.9 μA, to 0.87 μA to 0.84 μA when temperature increases from 77 K, 100 K to 150 K and then increases gradually from 1.86 μA–3.36 μA and to 9.95 μA when temperature increases from 200 K–250 K and to 295 K, respectively. Both the highest rectifying ratio at 100 K and the lowest one at 295 K occur in the voltage range of 2–5 V.

Electrical Properties of Bi2Ti2O7 Thin Films Grown at Low Temperature by the Pulsed Laser Deposition

2011 ◽  
Vol 14 (6) ◽  
pp. G38 ◽  
Author(s):  
Lee-Seung Kang ◽  
Jin-Seong Kim ◽  
Jong-Woo Sun ◽  
Sang-Hyo Kweon ◽  
Myung-Eun Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

scholarly journals Effect of Curing Agents on Electrical Properties of Low-Temperature Curing Conductive Coatings and Thermodynamic Analysis

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 656
Author(s):  
Junjie Shu ◽  
Yang Wang ◽  
Bei Guo ◽  
Weihua Qin ◽  
Lanxuan Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Surface Resistance ◽  
Advanced Manufacturing ◽  
Curing Time ◽  
Conductive Coatings ◽  
Exponential Factor ◽  
Design Expert ◽  
Surface Method ◽  
Curing Agents

Silver-based high-conductivity coatings are used in many advanced manufacturing equipment and components, and existing coatings require high-temperature curing. This paper studies the effects of different curing agents on the electrical properties of low-temperature curing (<100 °C) conductive coatings, and analyzes the effects of different curing temperatures and curing time on the surface resistance, square resistance and resistivity of conductive coatings. The response surface method in Design Expert was used to construct the model, and the curing thermodynamics of different curing agents were analyzed by DSC. It was found that curing agents with lower Tm and activation energy, higher pre-exponential factor and more flexible segments are beneficial to the preparation of highly conductive coatings.

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