Effect of Grain Orientation and Microstructure Evolution on Electromigration in Flip-Chip Solder Joint

Author(s):  
Xing Fu ◽  
Bin Zhou ◽  
Ruohe Yao ◽  
Yunfei En ◽  
Si Chen
2014 ◽  
Vol 54 (5) ◽  
pp. 939-944 ◽  
Author(s):  
Ye Tian ◽  
Xi Liu ◽  
Justin Chow ◽  
Yi Ping Wu ◽  
Suresh K. Sitaraman

2009 ◽  
Vol 49 (9-11) ◽  
pp. 1267-1272 ◽  
Author(s):  
M. Berthou ◽  
P. Retailleau ◽  
H. Frémont ◽  
A. Guédon-Gracia ◽  
C. Jéphos-Davennel

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Jianing Wang ◽  
Jieshi Chen ◽  
Zhiyuan Zhang ◽  
Peilei Zhang ◽  
Zhishui Yu ◽  
...  

Purpose The purpose of this article is the effect of doping minor Ni on the microstructure evolution of a Sn-xNi (x = 0, 0.05 and 0.1 wt.%)/Ni (Poly-crystal/Single-crystal abbreviated as PC Ni/SC Ni) solder joint during reflow and aging treatment. Results showed that the intermetallic compounds (IMCs) of the interfacial layer of Sn-xNi/PC Ni joints were Ni3Sn4 phase, while the IMCs of Sn-xNi/SC Ni joints were NiSn4 phase. After the reflow process and thermal aging of different joints, the growth behavior of interfacial layer was different due to the different mechanism of element diffusion of the two substrates. The PC Ni substrate mainly provided Ni atoms through grain boundary diffusion. The Ni3Sn4 phase of the Sn0.05Ni/PC Ni joint was finer, and the diffusion flux of Sn and Ni elements increased, so the Ni3Sn4 layer of this joint was the thickest. The SC Ni substrate mainly provided Ni atoms through the lattice diffusion. The Sn0.1Ni/SC Ni joint increases the number of Ni atoms at the interface due to the doping of 0.1Ni (wt.%) elements, so the joint had the thickest NiSn4 layer. Design/methodology/approach The effects of doping minor Ni on the microstructure evolution of an Sn-xNi (x = 0, 0.05 and 0.1 Wt.%)/Ni (Poly-crystal/Single-crystal abbreviated as PC Ni/SC Ni) solder joint during reflow and aging treatment was investigated in this study. Findings Results showed that the intermetallic compounds (IMCs) of the interfacial layer of Sn-xNi/PC Ni joints were Ni3Sn4 phase, while the IMCs of Sn-xNi/SC Ni joints were NiSn4 phase. After the reflow process and thermal aging of different joints, the growth behavior of the interfacial layer was different due to the different mechanisms of element diffusion of the two substrates. Originality/value In this study, the effect of doping Ni on the growth and formation mechanism of IMCs of the Sn-xNi/Ni (single-crystal) solder joints (x = 0, 0.05 and 0.1 Wt.%) was investigated.


2006 ◽  
Vol 504 (1-2) ◽  
pp. 426-430 ◽  
Author(s):  
Dae-Gon Kim ◽  
Jong-Woong Kim ◽  
Seung-Boo Jung

2000 ◽  
Author(s):  
Sheng Liu ◽  
Dathan Erdahl ◽  
I. Charles Ume

Abstract A novel approach for flip chip solder joint quality inspection based on vibration analysis is presented. Traditional solder joint inspection methods have their limitations when applied to flip chip solder joint quality inspection. The vibration detection method is a new approach which has advantages such as being non-contact, non-destructive, fast and can be used on-line or during process development. In this technique, a flip chip was modeled as a thick plate supported by solder bumps. Changes in solder joint quality produce different vibration responses of flip chip, and change its natural vibration frequencies. In this paper, the vibration frequencies of a flip chip on a ceramic substrate were calculated using the finite element method. Based on vibration analysis, a laser ultrasound and interferometric system was developed for flip chip solder joint quality inspection. In this system, chips with good solder joints can be distinguished from chips with bad joints using their vibration responses and frequencies. Defects recognition methods were developed and tested. Results indicate this approach offers great promise for solder bump inspection in flip chip, BGA and chip scale packages.


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