Direct nitridation of silicon surface by high-density inductively coupled plasma

Author(s):  
A.Kh. Antonenko ◽  
S.A. Arzhannikova ◽  
V.A. Volodin ◽  
M.D. Efremov ◽  
P.S. Zazulya ◽  
...  
2011 ◽  
Vol 239-242 ◽  
pp. 2524-2527
Author(s):  
Si Si Liu ◽  
Chao Hui Zhang ◽  
Han Bing Zhang

The relationship between the wettability and the roughness structure on silicon surface is studied. The unitary microscale square pillar arrays are fabricated by the way of inductively coupled plasma (ICP). The wettability of water droplets on the silicon surface is changed from hydrophilic to hydrophobic only by introducing microscale pillarlike structure. Furthermore, the scale effects of the unitary rough structure on hydrophobicity are investigated. For those silicon surfaces with a fixed pillar height, the relatively larger scale of grooves leads the droplets wettability state to unstable Cassie state and the contact angle will initially get larger and then decrease with the increase of groove width. The research could provide further insights into the design of functional surface with controllable roughness-induced hydrophobic.


2013 ◽  
Vol 562-565 ◽  
pp. 996-1000
Author(s):  
Zhen Zhou ◽  
Zheng Fang Dong ◽  
Li Shuang Feng ◽  
Kun Bo Wang ◽  
Yin Zhou Zhi

SOI Ridge nanowire waveguide (RNW) has advantages of strong confinement of optical mode, low propagation loss, small bend radius and fully compatible with CMOS technique, etc. An ultra-compact Y-branch coupler based on SOI RNW was designed and fabricated. Based on the finite-difference beam propagation method (FD-BPM), key parameters of the coupler were analyzed. Then the device was fabricated by electron beam lithography (EBL) and inductively coupled plasma (ICP) reactive ion etching. Results showed that the propagation loss of RNW was 1.89 dB/mm, and the radiation loss of the coupler with branch angle of 30° was only 0.66 dB. Compared with traditional Y-branch coupler, the proposed structure were more promising for high density optical integrated circuits.


1987 ◽  
Vol 50 (17) ◽  
pp. 1130-1132 ◽  
Author(s):  
R. W. Boswell ◽  
R. K. Porteous

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