Radiation Damage of SiO2/Si By Energetic Neutral Beam and Vjuv Photons
Keyword(s):
Ion Beam
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ABSTRACTTo clarify the generation mechanism of radiation damage induced in SiO2/Si by plasma processes, effects of three different beams, i.e., ions, neutrals and vacuum ultraviolet (VUV) photons have been evaluated independently. The radiation damage caused by these energetic bombardments has been measured by capacitance-voltage (C-V) measurements. These reveal that bombardments with a 250 eV Neo neutral beam generate + far less flat-band voltage shifts ( ΔVFB) than those with a Ne+ ion beam of equal kinetic energy. This c n be interpreted in terms of the differences in charge build-up and in hole production upon the incidence of these particles. VUV photons produced in the plasma are also responsible for large ΔVFB.
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2008 ◽
Vol 47
(6)
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pp. 5083-5085
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2011 ◽
Vol 50
(4R)
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pp. 044301
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2018 ◽
Vol 924
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pp. 449-452
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2005 ◽
Vol 44
(No. 7)
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pp. L235-L237
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2019 ◽
Vol 3
(2)
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pp. 217-222