Ultra-High-Sensitivity photodetector from ultraviolet to visible based on Ga-doped In2O3 nanowire phototransistor with top-gate structure

Author(s):  
Wenhao Ran ◽  
Zhen Lou ◽  
Guozhen Shen
2018 ◽  
Vol 22 (01n03) ◽  
pp. 149-156 ◽  
Author(s):  
Ayşegül Yazıcı ◽  
Ayşe Avcı ◽  
Ahmet Altındal ◽  
Bekir Salih ◽  
Özer Bekaroğlu

New ball-type metallobisphthalocyanines 2 (Co[Formula: see text]Pc[Formula: see text] and 3(Zn[Formula: see text]Pc[Formula: see text] were synthesized from the corresponding 4,4[Formula: see text]-[(5,6-diaminopyrimidine-2,4-diyl)bis(oxy)] diphytalonitril 1, which can be obtained by a nucleophilic displacement reaction of 4-nitrophthalonitrile with 5,6-diaminouracil sulfate. Characterization of novel compounds was performed by UV-vis, FT-IR, [Formula: see text]H-NMR, MALDI-TOF mass spectroscopy and elemental analysis. Organic field effect transistor devices (OFETs) with top gate structure were fabricated using these novel compounds as the active material. The devices were characterized by means of their output and transfer characteristics, and it was found that these OFET devices exhibit [Formula: see text]-type behavior. When compared with the 2-based device, the OFET with 3 showed higher field effect mobility and larger on/of current ratio.


RSC Advances ◽  
2019 ◽  
Vol 9 (62) ◽  
pp. 36293-36300 ◽  
Author(s):  
Jong Beom Ko ◽  
Seung-Hee Lee ◽  
Kyung Woo Park ◽  
Sang-Hee Ko Park

By supplying optimized oxygen and hydrogen, the highly stable and high mobility oxide TFTs with the top-gate structure were fabricated.


2001 ◽  
Vol 664 ◽  
Author(s):  
Robert B. Min ◽  
Sigurd Wagner

ABSTRACTThin film transistors were made using 50 nm thick directly deposited nanocrystalline silicon channel layers. The transistors have coplanar top gate structure. The nanocrystalline silicon was deposited from discharges in silane, hydrogen and silicon tetrafluoride. The transistors combine a high electron field effect mobility of ∼ 10 cm2/Vs with a low “off” current of ∼ 10−14 A per µm of channel length, and an “on”/“off” current ratio of ∼ 108. This result shows that directly deposited silicon can combine high mobility with low “off” currents.


ACS Nano ◽  
2011 ◽  
Vol 6 (1) ◽  
pp. 183-189 ◽  
Author(s):  
Myeong-Lok Seol ◽  
Sung-Jin Choi ◽  
Chang-Hoon Kim ◽  
Dong-Il Moon ◽  
Yang-Kyu Choi

2017 ◽  
Vol 48 (1) ◽  
pp. 1234-1237 ◽  
Author(s):  
Mian Zeng ◽  
Shu-jhih Chen ◽  
Xiao Di Liu ◽  
Li Mei Zeng ◽  
Wen Ying Li ◽  
...  

2014 ◽  
Vol 35 (3) ◽  
pp. 357-359 ◽  
Author(s):  
Jun Yong Bak ◽  
Min-Ki Ryu ◽  
Sang Hee Ko Park ◽  
Chi Sun Hwang ◽  
Sung Min Yoon

Sign in / Sign up

Export Citation Format

Share Document