High-frequency switching limitations in Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices for boost converter applications

2013 ◽  
Author(s):  
K. Shenai
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
High Frequency ◽  
Boost Converter ◽  
Power Devices

An 8kW LLC resonant converter in plasma power supply based on SiC power devices for efficiency improvement

Circuit World ◽  
2019 ◽  
Vol 45 (4) ◽  
pp. 181-188
Author(s):  
Zhenmin Wang ◽  
Wenyan Fan ◽  
Fangxiang Xie ◽  
Chunxian Ye
Keyword(s):  
Silicon Carbide ◽  
Power Supply ◽  
High Frequency ◽  
Experimental Results ◽  
Switching Frequency ◽  
Resonant Converter ◽  
Plasma Power ◽  
Power Devices ◽  
Content Type ◽  
Llc Resonant Converter

Purpose This paper aims to present an 8 kW LLC resonant converter designed for plasma power supply with higher efficiency and lighter structure. It presents how to solve the problems of large volume and weight, low performance and low efficiency of traditional plasma power supply. Design/methodology/approach At present, conventional silicon (Si) power devices’ switching performance is close to the theoretical limit determined by its material properties; the next-generation silicon carbide (SiC) power devices with outstanding advantages can be used to optimal design. This 8 kW LLC resonant converter prototype with silicon carbide (SiC) power devices with a modulated switching frequency ranges from 100  to 400 kHz. Findings The experimental results show that the topology, switching loss, rectifier loss, transformer loss and drive circuit of the full-bridge LLC silicon carbide (SiC) plasma power supply can be optimized. Research limitations/implications Due to the selected research object (plasma power supply), this study may have limited universality. The authors encourage the study of high frequency resonant converters for other applications such as argon arc welding. Practical implications This study provides a practical application for users to improve the quality of plasma welding. Originality/value The experimental results show that the full-bridge LLC silicon carbide (SiC) plasma power supply is preferred in operation under conditions of high frequency and high voltage. And its efficiency can reach 98%, making it lighter, more compact and more efficient than previous designs.

Silicon Carbide And Gallium Nitride Rf Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
C. E. Weitzel ◽  
K. E. Moore
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Output Power ◽  
Wide Bandgap ◽  
Rf Power ◽  
Power Performance ◽  
Power Devices ◽  
Power Module ◽  
Wide Bandgap Semiconductor ◽  
Power Densities

AbstractImpressive RF power performance has been demonstrated by three radically different wide bandgap semiconductor power devices, SiC MESFET's, SiC SIT's, and AlGaN HFET's. AlGaN HFET's have achieved the highest fmax 97 GHz. 4H-SiC MESFET's have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). 4H-SiC SIT's have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover a one kilowatt, 600 MHz SiC power module containing four multi-cell SIT's with a total source periphery of 94.5 cm has been demonstrated.

Interface Passivation for Silicon Dioxide Layers on Silicon Carbide

MRS Bulletin ◽  
2005 ◽  
Vol 30 (4) ◽  
pp. 288-292 ◽  
Author(s):  
Sarit Dhar ◽  
Shurui Wang ◽  
John R. Williams ◽  
Sokrates T. Pantelides ◽  
Leonard C. Feldman
Keyword(s):  
Silicon Carbide ◽  
High Frequency ◽  
Field Effect Transistor ◽  
Extreme Environments ◽  
Oxide Semiconductor ◽  
Power Devices ◽  
Commercial Market ◽  
Effect Transistor ◽  
Interface Passivation ◽  
Effective Carrier

AbstractSilicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SiC interface critical to the development of SiC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility for inversion-mode 4H-SiC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market for devices that operate at 5 kV and below.

400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200°C Baseplate Temperature

2006 ◽  
Vol 527-529 ◽  
pp. 1445-1448 ◽  
Author(s):  
Jim Richmond ◽  
Sei Hyung Ryu ◽  
Sumi Krishnaswami ◽  
Anant K. Agarwal ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Diode ◽  
Output Voltage ◽  
Input Voltage ◽  
Boost Converter ◽  
Power Devices ◽  
Switching Losses ◽  
Silicon Power Devices

This paper reports on a 400 watt boost converter using a SiC BJT and a SiC MOSFET as the switch and a 6 Amp and a 50 Amp SiC Schottky diode as the output rectifier. The converter was operated at 100 kHz with an input voltage of 200 volts DC and an output voltage of 400 volts DC. The efficiency was tested with an output loaded from 50 watts to 400 watts at baseplate temperatures of 25°C, 100°C, 150°C and 200°C. The results show the converter in all cases capable of operating at temperatures beyond the range possible with silicon power devices. While the converter efficiency was excellent in all cases, the SiC MOSFET and 6 Amp Schottky diode had the highest efficiency. Since the losses in a boost converter are dominated by the switching losses and the switching losses of the SiC devices are unaffected by temperature, the efficiency of the converter was effectively unchanged as a function of temperature.

400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200ºC Baseplate Temperature

2006 ◽  
pp. 1445-1448
Author(s):  
James Richmond ◽  
Sei Hyung Ryu ◽  
Sumi Krishnaswami ◽  
Anant Agarwal ◽  
John Palmour ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Boost Converter ◽  
Power Devices
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