Through Mold Via Development Using Laser Drilling Process for 3D Fan-out Wafer Level Package

Author(s):  
Hsiang-Yao Hsiao ◽  
David Soon Wee Ho ◽  
Ser Choong Chong ◽  
Tai Chong Chai ◽  
David Schutzberger ◽  
...  
2021 ◽  
Vol 3 (3) ◽  
Author(s):  
V. Chengal Reddy ◽  
Thota Keerthi ◽  
T. Nishkala ◽  
G. Maruthi Prasad Yadav

AbstractSurface roughness and heat-affected zone (HAZ) are the important features which influence the performance of the laser-drilled products. Understanding the influence of laser process parameters on these responses and identifying the cutting conditions for simultaneous optimization of these responses are a primary requirement in order to improve the laser drilling performance. Nevertheless, no such contribution has been made in the literature during laser drilling of AISI 303 material. The aim of the present work is to optimize the surface roughness (Ra) and HAZ in fibre laser drilling of AISI 303 material using Taguchi-based grey relational analysis (GRA). From the GRA methodology, the recommended optimum combination of process parameters is flushing pressure at 30 Pa, laser power at 2000 W and pulse frequency at 1500 Hz for simultaneous optimization of Ra and HAZ, respectively. From analysis of variance, the pulse frequency is identified as the most influenced process parameters on laser drilling process performance.


2000 ◽  
Author(s):  
Y. T. Lin ◽  
P. J. Tang ◽  
K. N. Chiang

Abstract The demands of electronic packages toward lower profile, lighter weight, and higher density of I/O lead to rapid expansion in the field of flip chip, chip scale package (CSP) and wafer level packaging (WLP) technologies. The urgent needs of high I/O density and good reliability characteristic lead to the evolution of the ultra high-density type of non-solder interconnection such as the wire interconnect technology (WIT). The new technology using copper posts to replace the solder bumps as interconnections shown a great improvement in the reliability life. Moreover, this type of wafer level package could achieve higher I/O density, as well as ultra fine pitch. This research will focus on the reliability analysis of the WIT package structures in material selection and structural design, etc. This research will use finite element method to analyze the physical behavior of packaging structures under thermal cycling condition to compare the reliability characteristics of conventional wafer level package and WIT packages. Parametric studies of specific parameters will be performed, and the plastic and temperature dependent material properties will be applied to all of the models.


Author(s):  
Renu Sharma ◽  
Isha Yadav ◽  
Anupriya Katiyar ◽  
Milap Singh ◽  
Shaveta ◽  
...  

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