(Invited) Impact of the Substrate Specifications on the Extended Defects Induced by the Deep Trench Isolation

2021 ◽  
Vol MA2021-01 (34) ◽  
pp. 1094-1094
Author(s):  
Isabella Mica ◽  
Pierpaolo Monge Roffarello ◽  
Didier Dutartre ◽  
Michele Basso ◽  
Alexandra Abbadie ◽  
...  
Keyword(s):  
Extended Defects ◽  
Deep Trench ◽  
Trench Isolation

(Invited) Impact of the Substrate Specifications on the Extended Defects Induced by the Deep Trench Isolation

2021 ◽  
Vol 102 (4) ◽  
pp. 29-36
Author(s):  
Isabella Mica ◽  
Pierpaolo Monge Roffarello ◽  
Didier Dutartre ◽  
Michele Basso ◽  
Alexandra Abbadie ◽  
...  
Keyword(s):  
Extended Defects ◽  
Deep Trench ◽  
Trench Isolation

Microstructural characterization of implanted LOCOS + trench-isolated structures

1991 ◽  
Vol 49 ◽  
pp. 888-889
Author(s):  
N. David Theodore ◽  
Barbara Vasquez ◽  
Peter Fejes
Keyword(s):  
Active Regions ◽  
Microstructural Characterization ◽  
Extended Defects ◽  
Active Device ◽  
Deep Trench ◽  
Device Scaling ◽  
Local Oxidation ◽  
Trench Isolation ◽  
Field Oxide

As device dimensions decrease and circuit densities increase, conventional LOCOS (Local-Oxidation of Silicon) isolation presents a limitation due to lateral encroachment of the isolation-oxide. Variations in LOCOS, including poly-buffered LOCOS have been of interest as means to limit lateral encroachment of the field-oxide into the active device-region. Deep-trench isolation provides a means to support device scaling and in this work is integrated with poly-buffered LOCOS to create self-aligned shallow fieldoxide elements with minimal encroachment into active regions. Use of these technologies however requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of fabrication-related stresses in the structures is of interest because extended-defects, if formed, could electrically degrade devices.

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

20-μm deep trench isolation process characterization for linear bipolar ICs

2001 ◽  
Author(s):  
Terry Dyer ◽  
Ian J. Doohan ◽  
Martin Fallon ◽  
Dave McAlpine ◽  
Adam Aitkenhead ◽  
...  
Keyword(s):  
Deep Trench ◽  
Process Characterization ◽  
Trench Isolation
Sign in / Sign up

Export Citation Format

Share Document