Drain-conductance optimization in nanowire TFETs

2012 ◽  
Author(s):  
E. Gnani ◽  
S. Reggiani ◽  
A. Gnudi ◽  
G. Baccarani
Keyword(s):  
Drain Conductance

A Drain Current and Transconductance Analytical Model for Symmetric Double Gate Junctionless FENT

2020 ◽  
Vol 65 ◽  
pp. 39-50
Author(s):  
N. Bora ◽  
N. Deka ◽  
R. Subadar
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Drain Current ◽  
Double Gate ◽  
Double Integral ◽  
Electrical Parameters ◽  
Continuity Equations ◽  
Nanowire Transistor ◽  
Drain Conductance ◽  
Tcad Simulations

This paper presents an analytical model of various electrical parameters for an ultra thin symmetric double gate (SDG) junctionless field effect nanowire transistor (JLFENT). The model works for all the regions of operation of the nanowire transistor without using any fitting parameter. The surface potential is derived based on the solutions of Poisson’s and current continuity equations by using appropriate boundary conditions. The Pao–Sah double integral was used to obtain the drain current, transconductance and drain conductance. The results obtained from analytical model are validated by comparing with GENIUS 3D TCAD simulations. The simplicity of the model makes it appropriate to be a SPICE compatible model.

Origin of Frequency Dependence in Drain Conductance of InAIAs/InGaAs HEMTs

2005 ◽  
Author(s):  
Hirohisa Taguchi ◽  
Maki Hayakawa ◽  
Yuki Nakamura ◽  
Tsutomu Iida ◽  
Yoshifumi Takanashi
Keyword(s):  
Frequency Dependence ◽  
Drain Conductance

Effect of Drain Conductance in Equivalent Circuit Model for GaN GIT Bidirectional Switch

2015 ◽  
Author(s):  
T. Ide ◽  
M. Shimizu ◽  
X.Q. Shen ◽  
T. Morita ◽  
N. Otsuka ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Drain Conductance
Sign in / Sign up

Export Citation Format

Share Document