A Drain Current and Transconductance Analytical Model for Symmetric Double Gate Junctionless FENT

2020 ◽  
Vol 65 ◽  
pp. 39-50
Author(s):  
N. Bora ◽  
N. Deka ◽  
R. Subadar
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Drain Current ◽  
Double Gate ◽  
Double Integral ◽  
Electrical Parameters ◽  
Continuity Equations ◽  
Nanowire Transistor ◽  
Drain Conductance ◽  
Tcad Simulations

This paper presents an analytical model of various electrical parameters for an ultra thin symmetric double gate (SDG) junctionless field effect nanowire transistor (JLFENT). The model works for all the regions of operation of the nanowire transistor without using any fitting parameter. The surface potential is derived based on the solutions of Poisson’s and current continuity equations by using appropriate boundary conditions. The Pao–Sah double integral was used to obtain the drain current, transconductance and drain conductance. The results obtained from analytical model are validated by comparing with GENIUS 3D TCAD simulations. The simplicity of the model makes it appropriate to be a SPICE compatible model.

scholarly journals An Approach For Drain Current Modeling Including Quantum Mechanical Effects For A DMDG Junctionless Field Effect Nanowire Transistor

2021 ◽  
Author(s):  
Nipanka Bora
Keyword(s):  
Surface Potential ◽  
Threshold Voltage ◽  
Field Effect ◽  
Drain Current ◽  
Compact Modeling ◽  
Threshold Voltage Shift ◽  
Nanowire Transistor ◽  
Dual Material ◽  
Potential Threshold ◽  
Drain Conductance

Abstract This paper presents the effects of quantum confinements on the surface potential, threshold voltage, drain current, transconductance, and drain conductance of a Dual Material Double Gate Junctionless Field Effect Nanowire Transistor (DMDG-JLFENT). The carrier energy quantization on the threshold voltage of a DMDG-JLFENT is modeled, and subsequently, other parameters like drain current were analytically presented. The QME considered here is obtained under the quantum confinement condition for an ultra-thin channel, i.e., below 10 nm of Si thickness. The threshold voltage shift due to QME can be used as a quantum correction term for compact modeling of junctionless transistors. The analytical model proposed for surface potential, threshold voltage, drain current, transconductance, and drain conductance were verified by TCAD 3-D quantum simulation results which makes it suitable for SPICE compact modeling.

Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

2020 ◽  
Vol 64 ◽  
pp. 115-122
Author(s):  
P. Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
Quantum Mechanical Effects ◽  
Novel Devices

The paper introduces an analytical model for gate all around (GAA) or Surrounding Gate Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum mechanical effects. The classical oxide capacitance is replaced by the capacitance incorporating quantum effects by including the centroid parameter. The quantum variant of inversion charge distribution function, inversion layer capacitance, drain current, and transconductance expressions are modeled by employing this model. The established analytical model results agree with the simulated results, verifying these models' validity and providing theoretical supports for designing and applying these novel devices.

Explicit drain current model of junctionless double-gate field-effect transistors

2013 ◽  
Vol 89 ◽  
pp. 134-138 ◽  
Author(s):  
Ashkhen Yesayan ◽  
Fabien Prégaldiny ◽  
Jean-Michel Sallese
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current ◽  
Double Gate

Screen-Grid Field Effect Transistor for sensing Bio-Molecules

2009 ◽  
Vol 1191 ◽  
Author(s):  
Kwee Guan Eng ◽  
Kristel Fobelets ◽  
Enrique Velazquez-Perez
Keyword(s):  
Particle Size ◽  
Influenza A Virus ◽  
Field Effect ◽  
Influenza A ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Coulter Counter ◽  
Effect Transistor ◽  
Screen Grid ◽  
Tcad Simulations

AbstractA novel field effect transistor, based on the Screen Grid Field Effect Transistor concept, is proposed with an integrated Coulter Counter pore for amplification of the sensing signal. 3D TCAD simulations are performed on the use of the Coulter Counter Field Effect Transistor (CCFET) to detect the Influenza A virus. The gate of the transistor is the pore through which the bioparticles pass. This passage causes a change in the electrostatic conditions of the gate and thus changes the source-drain current, similar to ISFET operation. The structure of the CC-FET is optimised for bio-sensing and multi-particle passage through the gate hole is simulated. TCAD results show that the CC-FET is capable of multi-particle and particle size detection.

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