SIE approach to scattered field computation for 2D periodic diffraction gratings in 3D space consisting of high permittivity dielectric materials and plasmonic scatterers

Author(s):  
P. Jorna ◽  
V. Lancellotti ◽  
M.C. van Beurden
2008 ◽  
Vol 2008 ◽  
pp. 1-4 ◽  
Author(s):  
Maher M. Abd Elrazzak ◽  
M. F. Alsharekh

A compact wideband stacked patch antenna is presented for the applications of GPS systems. This antenna covers the L1, L2, and L5 GPS bands of operating frequencies 1.575, 1.227, and 1.176 GHz, respectively. High permittivity dielectric materials are used to minimize the antenna dimensions. The obtained antenna is of dimensions  mm. To verify the design, the time dependence field distribution, the scattering parameters, and the radiation pattern are presented. The scattering parameters show that the antenna operates at the GPS frequencies with lower than  dB. The finite difference time domain (FDTM) with the perfect matched layer (PML) is used in the present analysis.


Author(s):  
T. Fujita ◽  
T. Yasuzumi ◽  
Y. Tsuda ◽  
R. Suga ◽  
O. Hashimoto ◽  
...  

Author(s):  
Ameer F. Roslan ◽  
F. Salehuddin ◽  
A. S. M. Zain ◽  
K. E. Kaharudin ◽  
I. Ahmad

<p><span>In this research, the performance of the 19 nm single gate MOSFET is enhanced through the implementation of the high permittivity dielectric material. The MOSFET scaling trends necessities in device dimensions can be satisfied through the implementation of the high-K dielectric materials in place of the SiO2. Therefore, the 19 nm n-channel MOSFET device with different High-K dielectric materials are implemented and its performance improvement has also been analysed. Virtual fabrication is exercised through ATHENA module from Silvaco TCAD tool. Meanwhile, the device characteristic was utilized by using an ATLAS module. The aforementioned materials have also been simulated and compared with the conventional gate oxide SiO2 for the same structure. At the end, the results have proved that Titanium oxide (TiO2) device is the best dielectric material with a combination of metal gate Tungsten Silicides (WSix). The drive current (ION) of this device (WSix/TiO2) is 587.6 µA/um at 0.534 V of threshold voltage (VTH) as opposed to the targeted 0.530 V predicted, as well as a relatively low IOFF that is obtained at 1.92 pA/µm. This ION value meets the minimum requirement predicted by International Technology Roadmap for Semiconductor (ITRS) 2013 prediction for low performance <br /> (LP) technology. </span></p>


2020 ◽  
Vol 11 ◽  
pp. 1190-1197
Author(s):  
Adnanullah Khan ◽  
Amir Habib ◽  
Adeel Afzal

High permittivity and breakdown strength are desired to improve the energy storage density of dielectric materials based on reinforced polymer composites. This article presents the synthesis of polythiophene-encapsulated BaTiO3 (BTO-PTh) nanoparticles via an in situ Cu(II)-catalyzed chemical oxidative polymerization of thiophene monomer on hydrothermally obtained tetragonal BTO nanocrystals. The formed core–shell-type BTO-PTh nanoparticles exhibit excellent dielectric properties with high permittivity (25.2) and low loss (0.04) at high frequency (106 Hz). A thick PTh encapsulation layer on the surface of the BTO nanoparticles improves their breakdown strength from 47 to 144 kV/mm and the energy storage density from 0.32 to 2.48 J/cm3. A 7.75-fold increase in the energy storage density of the BTO-PTh nanoparticles is attributed to simultaneously high permittivity and breakdown strength, which are excellent for potential energy storage applications.


2017 ◽  
Vol 63 (3) ◽  
pp. 255-260 ◽  
Author(s):  
Ahmed Rhbanou ◽  
Seddik Bri ◽  
Mohamed Sabbane

Abstract In this paper, the substrate integrated waveguide (SIW) resonator is designed to study the influence of dielectric materials on its operating parameters (insertion loss, fractional bandwidth and unloaded Q-factor). The results obtained show that the use of high permittivity substrate in the SIW resonator by increasing its thickness allows reducing the size of resonator by causing the increase in its unloaded Q-factor. A SIW bandpass filter is designed using low temperature co-fired ceramic (LTCC) technology and high permittivity substrate. The filter has a fractional bandwidth of 27 % centered at 14.32 GHz with insertion loss of 0.7 dB.


2014 ◽  
Vol 8 (4) ◽  
pp. 523-529 ◽  
Author(s):  
Hisamichi Yoshigoe ◽  
◽  
Shotaro Kadoya ◽  
Satoru Takahashi ◽  
Kiyoshi Takamasu

Recently, three-dimensional microstructures have been attracting much attention because of their potential application to electromagnetic devices operating with specific frequencies such as THz wave. For suitability in such applications, the structures often need to have complex three-dimensional shapes, be smaller than or at least as small as the applied wavelengths, consist of metals or dielectric materials, and have certain electromagnetic characteristics such as high permittivity. Although there are several methods for fabricating micro-structures, few of them satisfy all of these conditions. We propose a new fabrication method for dielectric-metal three-dimensional structures with sizes of a few tens of micrometers. The main feature of our method is the extraction of metal using photocatalyst nanoparticles. Silver ions in solution are reduced to neutral silver by electrons from the photocatalyst nanoparticles. Experimental results show that our system can be used to fabricate threedimensional structures, and we propose a new method for controlling the composition of the structures.


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