The effects of Au film thickness on the reliability of Sn-Pb solder joints

2015 ◽  
Author(s):  
Xiaorui Lv ◽  
Pengrong Lin ◽  
Yingzhuo Huang ◽  
Xueming Jiang ◽  
Binhao Lian ◽  
...  
Keyword(s):  
Film Thickness ◽  
Solder Joints ◽  
Au Film

scholarly journals Gold Nanofilm-Coated Porous Silicon as Surface-Enhanced Raman Scattering Substrate

2019 ◽  
Vol 9 (22) ◽  
pp. 4806 ◽  
Author(s):  
Ibrahim Khalil ◽  
Chia-Man Chou ◽  
Kun-Lin Tsai ◽  
Steven Hsu ◽  
Wageeh A. Yehye ◽  
...  
Keyword(s):  
Thin Film ◽  
Porous Silicon ◽  
Raman Scattering ◽  
Film Thickness ◽  
Sers Substrate ◽  
Au Film ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Enhanced Raman Scattering ◽  
Au Thin Film

Metallic film-coated porous silicon (PSi) has been reported as a lucrative surface-enhanced Raman scattering (SERS) substrate. The solution-based fabrication process is facile and easy; however, it requires additional reducing agent and extra chemical treatment, as well as hinders the suitability as a reproducible SERS substrate due to irregular hot spot generation via irregular deposition of metallic nanocrystallites. To address this issue, we report a unique one-step electronic beam (e-beam) physical vapor deposition (PVD) method to fabricate a consistent layer of gold (Au) nanofilm on PSi. Moreover, to achieve the best output as a SERS substrate, PSi prepared by electrochemical etching was used as template to generate an Au layer of irregular surface, offering the surface roughness feature of the PSi–Au thin film. Furthermore, to investigate the etching role and Au film thickness, Au-nanocrystallites of varying thickness (5, 7, and 10 nm) showing discrete surface morphology were characterized and evaluated for SERS effect using Rhodamine 6G (R6G). The SERS signal of R6G adsorbed on PSi–Au thin film showed a marked enhancement, around three-fold enhancement factor (EF), than the Si–Au thin film. The optimal SERS output was obtained for PSi–Au substrate of 7 nm Au film thickness. This study thus indicates that the SERS enhancement relies on the Au film thickness and the roughness feature of the PSi–Au substrate.

The influence of Au film thickness and annealing conditions on the VLS-assisted growth of ZnO nanostructures

2014 ◽  
Vol 25 (21) ◽  
pp. 215601 ◽  
Author(s):  
K Govatsi ◽  
A Chrissanthopoulos ◽  
V Dracopoulos ◽  
S N Yannopoulos
Keyword(s):  
Film Thickness ◽  
Zno Nanostructures ◽  
Au Film ◽  
Annealing Conditions

Deformation characteristics of tin-based solder joints

2003 ◽  
Vol 18 (10) ◽  
pp. 2304-2309 ◽  
Author(s):  
Antonia Antoniou ◽  
Ashraf F. Bastawros
Keyword(s):  
Film Thickness ◽  
Solder Joints ◽  
Pure Shear ◽  
Shear Bands ◽  
Deformation Field ◽  
Image Correlation ◽  
Material System ◽  
Long Range Correlations ◽  
Experimental Configuration ◽  
Surface Scan

A novel experimental configuration was devised to measure the evolution of the deformation field and the corresponding toughness in solder joints for microelectronic packaging. The utilized material system comprised a ductile layer of tin-based solder encapsulated within relatively hard copper shoulders. The experimental configuration provided pure shear state within the constrained solder layer. Different Pb/Sn compositions were tested with grain size approaching the film thickness. The in-plane strain distribution within the joint thickness was measured by a microscopic digital image correlation system. The toughness evolution within such highly gradient deformation field was monitored qualitatively through a two-dimensional surface scan with a nanoindentor. The measurements showed a highly inhomogeneous deformation field within the film with discreet shear bands of concentrated strain. The localized shear bands showed long-range correlations of the order 2–3 grain diameters. A size-dependent macroscopic response on the layer thickness was observed. However, the corresponding film thickness was approximately 100–1000 times larger than those predicted by nonlocal continuum theories and discreet dislocation.

Kinetics of a-Si:H Crystallization Induced by Gold at Low Temperatures

1992 ◽  
Vol 258 ◽  
Author(s):  
A.A. Pasa ◽  
M.B. Schubert ◽  
C.-D. Abel ◽  
W. Beyer ◽  
W. Losch ◽  
...  
Keyword(s):  
Activation Energy ◽  
Glow Discharge ◽  
Film Thickness ◽  
Raman Spectra ◽  
Low Temperatures ◽  
Crystallization Rate ◽  
Au Film ◽  
Annealing Conditions ◽  
Kinetics Of ◽  
Induced Crystallization

ABSTRACTThe Au-induced crystallization of a-Si:H has been studied by evaporating Au films of different thicknesses onto intrinsic glow discharge deposited a-Si:H layers. The presence of a sharp peak in the Raman spectra (FWHM≈9 cm-1, ω516 cm-1) of samples with a Au thickness larger than 2 nm, which have been annealed in vacuum at 400K≤T≤600K, indicate that the crystallites have approximately the same size (6nm) regardless of the annealing conditions. An investigation of crystallization versus Au-film thickness revealed, that the total crystallized volume is increasing with Au thickness, and furthermore a saturation of the crystallized volume takes place, most probably due to an exhaustion of the Au reservoir. The increase of crystallization rate with temperature follows an Arrhenius-like dependence with an activation energy of 1.1 eV. Changes in hydrogen content as a consequence of the crystallization have been monitored by H-effusion measurements: Au-coated a-Si:H samples show a strong H2 evolution at temperatures substantially lower than uncoated ones.

scholarly journals Formation of precise 2D Au particle arrays via thermally induced dewetting on pre-patterned substrates

2011 ◽  
Vol 2 ◽  
pp. 318-326 ◽  
Author(s):  
Dong Wang ◽  
Ran Ji ◽  
Peter Schaaf
Keyword(s):  
Film Thickness ◽  
Au Nanoparticle ◽  
Patterned Substrates ◽  
Large Area ◽  
Thermally Induced ◽  
Patterned Substrate ◽  
Au Film ◽  
Patterned Structures ◽  
Circular Holes ◽  
Curvature Driven

The fabrication of precise 2D Au nanoparticle arrays over a large area is presented. The technique was based on pre-patterning of the substrate before the deposition of a thin Au film, and the creation of periodic particle arrays by subsequent dewetting induced by annealing. Two types of pre-patterned substrates were used: The first comprised an array of pyramidal pits and the second an array of circular holes. For the dewetting of Au films on the pyramidal pit substrate, the structural curvature-driven diffusion cooperates with capillarity-driven diffusion, resulting in the formation of precise 2D particle arrays for films within a structure dependent thickness-window. For the dewetting of Au films on the circular hole substrate, the periodic discontinuities in the films, induced by the deposition, can limit the diffusion paths and lead to the formation of one particle per individual separated region (holes or mesas between holes), and thus, result in the evolution of precise 2D particle arrays. The influence of the pre-patterned structures and the film thickness is analyzed and discussed. For both types of pre-patterned substrate, the Au film thickness had to be adjusted in a certain thickness-window in order to achieve the precise 2D particle arrays.

Influences of Exothermic Reactive Layer and Metal Interlayer on Fracture Behavior of Reactively Bonded Solder Joints

2015 ◽  
Vol 137 (3) ◽  
Author(s):  
Takahiro Namazu ◽  
Kohei Ohtani ◽  
Shozo Inoue ◽  
Shugo Miyake
Keyword(s):  
Film Thickness ◽  
Microelectromechanical Systems ◽  
Solder Joints ◽  
Single Crystal Silicon ◽  
Bending Test ◽  
Crystal Silicon ◽  
Fracture Origin ◽  
Four Point Bending ◽  
External Forces

Reactively bonded solder joints with Al/Ni exothermic films attract much attention in semiconductor and microelectromechanical systems (MEMS) industries. Higher bond strength of the joints is required for long-term mechanical reliability. We have investigated the strength of rectangular-solid single crystal silicon (SCS) specimens with reactively bonded Sn-3.5Ag solder joint by using specially developed four-point bending test equipment. In this paper, the influences of Al/Ni exothermic film thickness and metallic interlayer on the strength are discussed. The strength increases with increasing Al/Ni film thickness and pressure load during bonding. Metallic interlayer between the solder and SCS also affects the strength because fracture origin is dependent on the types of metals. The obtained results suggest that reacted NiAl is durable against external forces compared with the solder and interlayer.

scholarly journals A Study on the Conductivity Variation of Au Coated Conductive Particles in ACF Packaging Process

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Jao-Hwa Kuang ◽  
Chao-Ming Hsu ◽  
Ah-Der Lin
Keyword(s):  
Film Thickness ◽  
Contact Area ◽  
Operating Temperature ◽  
Particle Diameter ◽  
Material Behavior ◽  
Symmetric Model ◽  
Conductive Particle ◽  
Bonding Force ◽  
Packaging Process ◽  
Au Film

In the ACF packaging process, a bonding force will be applied to the ACF structure. The finite element analysis is used to simulate the ACF packaging process. Material behavior is assumed to be superelastic for resin, viscoelastic for polymer matrix, and elastic-plastic for metal, such as bump, pad, chip, and Au-film. The axis-symmetric model is employed in FEA simulation with time-varying bonding force and operating temperature. In this study, the parameters, including conductive particle diameter, Au-film thickness, and bonding force, are analyzed with nonliner and temperature-dependent material properties. The simulation results indicate that bonding force and operating temperature have strong effects on the formation of concave on Au-film. In addition, surface wrinkle of Au-film will be induced by the bonding force. Both of the concaving and the wrinkling on Au-film will decrease the contact area between the conductive particle and the bump and the contact area between the conductive particle and the pad. Decrease of the contact area means increase of the total resistance for the ACF structure. The results show that the smaller the conductive particle diameter, the smaller the contact area. Generally, increasing the thickness of Au-film will decrease the contact areas, except at the Au-film thickness of 0.05 μm.

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