Defect current and defect band conduction of ultrathin oxides after degradation and breakdown

2008 ◽  
Author(s):  
Mingzhen Xu ◽  
Changhua Tan
Keyword(s):  
Defect Band ◽  
Ultrathin Oxides ◽  
Band Conduction

IMPURITY BAND CONDUCTION STUDY BY PIEZORESISTANCE MEASUREMENTS

1976 ◽  
Vol 37 (C4) ◽  
pp. C4-333-C4-336
Author(s):  
M. AVEROUS ◽  
J. CALAS ◽  
C. FAU
Keyword(s):  
Impurity Band ◽  
Band Conduction

Pressure Effects on Two-Band Conduction and Superconductivity in C- and Al-Substituted MgB2 Single Crystals

2010 ◽  
Vol 79 (7) ◽  
pp. 074719 ◽  
Author(s):  
Takahiko Masui ◽  
Yuji Mikasa ◽  
Sergey Lee ◽  
Setsuko Tajima
Keyword(s):  
Single Crystals ◽  
Pressure Effects ◽  
Band Conduction

scholarly journals Impurity band conduction in Si-doped β-Ga2O3 films

2021 ◽  
Vol 118 (7) ◽  
pp. 072105
Author(s):  
Anil Kumar Rajapitamahuni ◽  
Laxman Raju Thoutam ◽  
Praneeth Ranga ◽  
Sriram Krishnamoorthy ◽  
Bharat Jalan
Keyword(s):  
Impurity Band ◽  
Si Doped ◽  
Band Conduction

IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN n-GALLIUM ARSENIDE

1967 ◽  
Vol 45 (1) ◽  
pp. 119-126 ◽  
Author(s):  
J. Basinski ◽  
R. Olivier
Keyword(s):  
Ionization Energy ◽  
Impurity Band ◽  
Shallow Donor ◽  
Band Model ◽  
A Value ◽  
Transition Concentration ◽  
Temperature Electron ◽  
Two Band Model ◽  
Band Conduction ◽  
Made In

Hall effect and resistivity measurements have been made in the temperature range 4.2–360 °K on several samples of n-type GaAs grown under oxygen atmosphere and without any other intentional dopings. The principal shallow donor in this material is considered to be Si. All samples exhibited impurity-band conduction at low temperature. Electron concentrations in the conduction band were calculated, using a two-band model, and then fitted to the usual equation expressing charge neutrality. A value of 2.3 × 10−3 eV was obtained for the ionization energy of the donors, for donor concentration ranging from 5 × 1015 cm−3 to 2 × 1016 cm−3. The conduction in the impurity band was of the hopping type for these concentrations. A value of 3.5 × 1016 cm−3 was obtained for the critical transition concentration of the impurity-band conduction to the metallic type.

Effect of Double Defects on Transmission Spectra of One-Dimensional Photonic Crystals

2010 ◽  
Vol 663-665 ◽  
pp. 725-728 ◽  
Author(s):  
Yuan Ming Huang ◽  
Qing Lan Ma ◽  
Bao Gai Zhai ◽  
Yun Gao Cai
Keyword(s):  
Photonic Crystals ◽  
Band Gap ◽  
Theoretical Calculations ◽  
Stop Band ◽  
Band Gaps ◽  
Characteristic Matrix ◽  
Frequency Range ◽  
Defect Band ◽  
One Dimensional ◽  
The One

Considered the model of the one-dimensional photonic crystals (1-D PCs) with double defects, the refractive indexes (n2’, n3’ and n2’’, n3’’) of the double defects were 2.0, 4.0 and 4.0, 2.0 respectively. With parameter n2=1.5, n3=2.5, by theoretical calculations with characteristic matrix method, the results shown that for a certain number (14 was taken) of layers of the 1-D PCs, when the double defects abutted, there was a defect band gap in the stop band gap, while when the double defects separated, there occurred two defect band gaps in the stop band gap; besides, with the separation of the two defects, the transmittance of the double defect band gaps decreased gradually. In addition, in this progress, the frequency range of the stop band gap has a little increase from 0.092 to 0.095.

Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

2006 ◽  
Vol 912 ◽  
Author(s):  
Justin J Hamilton ◽  
Erik JH Collart ◽  
Benjamin Colombeau ◽  
Massimo Bersani ◽  
Damiano Giubertoni ◽  
...  
Keyword(s):  
Structural Properties ◽  
Solid Phase ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
Bulk Silicon ◽  
Defect Band ◽  
Future Technology ◽  
Ultrashallow Junctions ◽  
P Type ◽  
Technology Nodes

AbstractFormation of highly activated, ultra-shallow and abrupt profiles is a key requirement for the next generations of CMOS devices, particularly for source-drain extensions. For p-type dopant implants (boron), a promising method of increasing junction abruptness is to use Ge preamorphizing implants prior to ultra-low energy B implantation and solid-phase epitaxy regrowth to re-crystallize the amorphous Si. However, for future technology nodes, new issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). Previous results have shown that the buried Si/SiO2 interface can improve dopant activation, but the effect depends on the detailed preamorphization conditions and further optimization is required. In this paper a range of B doses and Ge energies have been chosen in order to situate the end-of-range (EOR) defect band at various distances from the back interface of the active silicon film (the interface with the buried oxide), in order to explore and optimize further the effect of the interface on dopant behavior. Electrical and structural properties were measured by Hall Effect and SIMS techniques. The results show that the boron deactivates less in SOI material than in bulk silicon, and crucially, that the effect increases as the distance from the EOR defect band to the back interface is decreased. For the closest distances, an increase in junction steepness is also observed, even though the B is located close to the top surface, and thus far from the back interface. The position of the EOR defect band shows the strongest influence for lower B doses.

Electrical Properties of β-FeSi2 Thin Films on Insulating Substrates

2003 ◽  
Vol 796 ◽  
Author(s):  
Kensuke Akiyama ◽  
Takeshi Kimura ◽  
Shin Nishiyama ◽  
Takeo Hattori ◽  
Naoki Ohashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Iron Silicide ◽  
Amorphous Film ◽  
Rf Magnetron Sputtering ◽  
Atomic Ratio ◽  
Similar Temperature Dependence ◽  
Electrical Conductivities ◽  
Similar Temperature ◽  
Band Conduction ◽  
Insulating Substrates

ABSTRACTIron silicide thin films were prepared on insulating substrates using RF magnetron sputtering method. Amorphous, polycrystalline and epitaxial β-FeSi2 were obtained on MgO(001), Al2O3(110) and Al2O3(001) substrates, respectively. Electrical conductivities of these films showed similar temperature dependence. Intrinsic band conduction and hopping conduction mechanism were predominant above and below 600K, respectively. The localized ordering in the polycrystalline and epitaxial films that controled the movement of carriers were as low as in the amorphous film. For the epitaxial β-FeSi2 film, electrical conductivity below 600K were affected by atomic ratio of silicon to iron (Si/Fe) in the films, because the localized ordering in the films decreased as Si/Fe atomic ratio decreased.

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