Simulation, Fabrication and Characterization of 4500V 4H-SiC Normally-Off VJFET

2013 ◽  
Vol 347-350 ◽  
pp. 1641-1645
Author(s):  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Rui Li ◽  
Yun Li ◽  
...  
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Drain Current ◽  
Gate Bias ◽  
Edge Termination ◽  
Blocking Voltage ◽  
Drain Bias ◽  
Fabrication And Characterization ◽  
A Current

Simulation, Fabrication and characteristics of high voltage, normally-off JFETs in 4H-SiC are presented. The devices were built on ND= 1.01015 cm-3 doped 50μm thick n-type epilayer grown on a n+ 4H-SiC. Parameters of edge termination have been optimized by simulations. Its blocking voltage exceeds 4500V at gate bias VG = -6V and forward drain current is in excess of 3A at gate bias VG = 3V and drain bias VD = 5V corresponding a current density of 80A/cm2.

213 W 500 Mhz 4H-SiC Static Induction Transistor

2011 ◽  
Vol 130-134 ◽  
pp. 3392-3395 ◽  
Author(s):  
Gang Chen ◽  
Peng Wu ◽  
Song Bai ◽  
Zhe Yang Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Current Density ◽  
Drain Current ◽  
Total Power ◽  
Class Ab ◽  
Blocking Voltage ◽  
Finger Width ◽  
Static Induction Transistor ◽  
Recessed Gate ◽  
Total Power Output ◽  
A Current

. Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.7μm and the gate channel is 1.2μm. One cell has 400 source fingers and each source finger width is 100μm. 1mm SiC SIT yielded a current density of 123mA/mm of drain current at a drain voltage of 20V. A maximum current density of 150 mA/mm was achieved with Vd=40V. The device blocking voltage with a gate bias of-16 V was 200 V. Packaged 24-cm devices were evaluated using amplifier circuits designed for class AB operations. A total power output in excess of 213 W was obtained with a power density of 8.5 W/cm and gain of 8.5 dB at 500 MHz under pulse operation.

5A 1300V Trenched and Implanted 4H-SiC Vertical JFET

2012 ◽  
Vol 229-231 ◽  
pp. 824-827 ◽  
Author(s):  
Gang Chen ◽  
Xiao Feng Song ◽  
Song Bai ◽  
Li Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Channel ◽  
Drain Current ◽  
Gate Bias ◽  
Blocking Voltage ◽  
Drain Bias ◽  
Effect Transistor ◽  
Lift Off

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at gate bias VG = -6V and forward drain current is in excess of 5A at gate bias VG = 3V and drain bias VD = 3V. The SiC VJFET device’s current density is 240A/cm2 at VG= 3V and VD = 3V, with related specific on-resistance 8.9mΩ•cm2. Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance and the bonding spun gold. The specific on-resistance can be further reduced by improving the doping concentration of SiC channel epilayer and the device’s ohmic contact.

Fabrication and characterization of Li–Mn–Ni–O sputtered thin film high voltage cathodes for Li-ion batteries

2012 ◽  
Vol 211 ◽  
pp. 108-118 ◽  
Author(s):  
Loïc Baggetto ◽  
Raymond R. Unocic ◽  
Nancy J. Dudney ◽  
Gabriel M. Veith
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Li Ion Batteries ◽  
Li Ion ◽  
Fabrication And Characterization

Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1449-1452 ◽  
Author(s):  
Yang Sui ◽  
Ginger G. Walden ◽  
Xiao Kun Wang ◽  
James A. Cooper
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Drift Region ◽  
Power Devices ◽  
Power Switching ◽  
Design Considerations ◽  
Blocking Voltage ◽  
Switching Devices

We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.

4.5kV SiC JBS Diodes

2013 ◽  
Vol 347-350 ◽  
pp. 1506-1509 ◽  
Author(s):  
Yong Hong Tao ◽  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Yun Li
Keyword(s):  
Numerical Simulations ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Current Density ◽  
Doping Level ◽  
Doping Concentration ◽  
Device Structure ◽  
Reverse Voltage ◽  
Edge Termination ◽  
Drift Layer

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V.

Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode

2014 ◽  
Vol 778-780 ◽  
pp. 800-803 ◽  
Author(s):  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Rui Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Numerical Simulations ◽  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Level ◽  
Electrical Characteristics ◽  
Edge Termination ◽  
Fabrication And Characterization ◽  
Drift Layer

4H-SiC JBS diode with breakdown voltage higher than 4.5 kV, has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper we report the design, the fabrication, and the electrical characteristics of 4H-SiC JBS diode. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The epilayer properties of the N-type are 55 μm with a doping of 9×1014cm−3. The diodes were fabricated with a floating guard rings edge termination. The on-state voltage was 4V at JF=80 A/cm2

scholarly journals A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

2005 ◽  
Vol 483-485 ◽  
pp. 1005-1008
Author(s):  
Pierre Brosselard ◽  
Thierry Bouchet ◽  
Dominique Planson ◽  
Sigo Scharnholz ◽  
Gontran Pâques ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Electrical Characterization ◽  
Electrical Strength ◽  
Oxide Charge ◽  
Blocking Voltage ◽  
Simulation Based ◽  
Device Structures ◽  
Silicon Silicon

Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.

scholarly journals Flexible diamond-like carbon film prepared by hydrothermal electrochemical method

2017 ◽  
Vol 35 (3) ◽  
pp. 447-453
Author(s):  
Ying Tao ◽  
Danqin Yi ◽  
Baojun Zhu ◽  
Wenpeng Cao
Keyword(s):  
Current Density ◽  
Electrochemical Method ◽  
Carbon Film ◽  
Reflectance Spectroscopy ◽  
Internal Stresses ◽  
Diamond Like Carbon ◽  
One Step ◽  
Hydrothermal Electrochemical Method ◽  
A Current

AbstractDiamond-like carbon (DLC) thin films were prepared by hydrothermal electrochemical method in one-step process. The structural characterization of these films was carried out by scanning electron microscopy (SEM), Raman spectroscopy, and infrared reflectance spectroscopy (IR). It was found that there was an increased sp2 carbon content but decreased sp3 carbon and hydrogen contents with an increase in current density. The flexibility and internal stresses of the DLC films were affected by hydrogen, sp3 amorphous carbon and ordered crystalline sp2 carbon contents. The highly flexible DLC films with high sp3 carbon and hydrogen contents were prepared at a current density of 0.001 mA/cm2.

Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor

2012 ◽  
Vol 717-720 ◽  
pp. 1163-1166 ◽  
Author(s):  
Lei Lin ◽  
Jian Hui Zhao
Keyword(s):  
High Current Density ◽  
High Current ◽  
Initial Pulse ◽  
Large Area ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Pulse Testing ◽  
Blocking Voltage ◽  
Fabrication And Characterization

In this paper, we report a 0.1cm2 4H-SiC gate-turn-off (GTO) thyristor with 6 kV blocking voltage fabricated on a structure with a 60µm blocking layer. A relatively large area, high voltage 4H-SiC GTO that exhibits encouraging characteristic at the on- and off-states, and a low leakage current with 63% devices blocking 3kV or higher. Initial pulse testing result shows that the fabricated GTOs are capable of both high current density and high turn-off speed.

Sign in / Sign up

Export Citation Format

Share Document