Ultra-low Power Relaxation Oscillator Based on Negative Capacitance Ferroelectric Field-Effect Transistor

2019 ◽  
Author(s):  
Yi Zhan ◽  
Guoyi Yu ◽  
Jiarui Xu ◽  
Juhui Li ◽  
Chao Wang
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Relaxation Oscillator ◽  
Negative Capacitance ◽  
Ultra Low Power ◽  
Effect Transistor

Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami
Keyword(s):  
Optimal Design ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Ultra Low Power ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

scholarly journals The active modulation of drug release by an ionic field effect transistor for an ultra-low power implantable nanofluidic system

Nanoscale ◽  
2016 ◽  
Vol 8 (44) ◽  
pp. 18718-18725 ◽  
Author(s):  
Giacomo Bruno ◽  
Giancarlo Canavese ◽  
Xuewu Liu ◽  
Carly S. Filgueira ◽  
Adriano Sacco ◽  
...  
Keyword(s):  
Drug Release ◽  
Low Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ultra Low Power ◽  
Ionic Field ◽  
Effect Transistor ◽  
Nanofluidic System
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