Influence of Copper Plating Current Density Toward Voids Formation at High Temperature Storage (HTS) Test

2018 ◽  
Author(s):  
Ronizan bin Mohd Salleh
Keyword(s):  
High Temperature ◽  
Current Density ◽  
Copper Plating ◽  
High Temperature Storage ◽  
Temperature Storage

scholarly journals Intermetallic Phase on the Interface of Ag-Au-Pd/Al Structure

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hao-Wen Hsueh ◽  
Fei-Yi Hung ◽  
Truan-Sheng Lui ◽  
Li-Hui Chen ◽  
Kuan-Jen Chen
Keyword(s):  
High Temperature ◽  
Thin Layer ◽  
Current Density ◽  
Electrical Resistance ◽  
Intermetallic Phase ◽  
Hexagonal Structure ◽  
Bonding Interface ◽  
Main Phase ◽  
High Temperature Storage ◽  
Temperature Storage

Three wires, Au, Cu, and Ag-Au-Pd, were bonded on an Al pad, inducing IMC growth by a 155 hr high temperature storage (HTS) so that the electrical resistance was increased and critical fusing current density (CFCD) decreased. Observations of the Ag-Au-Pd wire after HTS (0–1000 hr) indicated that IMC between the Ag-Au-Pd wire and Al Pad was divided into three layers: Ag2Al layers above and below the bonding interface and a polycrystal thin layer above the total IMC. A high percentage of Pd and Au existed in this 200 nm thin layer, and could suppress Al diffusion into the Ag matrix to inhibit IMC growth. After PCT-1000 hr, a noncontinuous structure still remained between the IMC layer and interface, and the main phase of IMC was (Ag, Au, Pd)2Al with a hexagonal structure.

High temperature storage reliability investigation of the Al–Cu wire bond interface

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1966-1970 ◽  
Author(s):  
R. Pelzer ◽  
M. Nelhiebel ◽  
R. Zink ◽  
S. Wöhlert ◽  
A. Lassnig ◽  
...  
Keyword(s):  
High Temperature ◽  
Wire Bond ◽  
High Temperature Storage ◽  
Bond Interface ◽  
Temperature Storage

High Temperature Storage and Gamma Radiation Effects on Mechanical Properties of Stacked Die Package

2014 ◽  
Vol 895 ◽  
pp. 567-570
Author(s):  
Azman Jalar ◽  
Wan Yusmawati Wan Yusoff ◽  
Norinsan Kamil Othman ◽  
Irman Abdul Rahman
Keyword(s):  
High Temperature ◽  
Gamma Radiation ◽  
Radiation Effects ◽  
Storage Period ◽  
Bending Test ◽  
Three Point Bending ◽  
Micromechanical Properties ◽  
3D Ct Scan ◽  
High Temperature Storage ◽  
Temperature Storage

Effect of gamma radiation (1.33 MeV) and high temperature storage of semiconductor package towards micromechanical properties has been investigated. The in-house fabricated Quad Flat No Lead was exposed to gamma radiation with the dose of 5 Gy. Afterwards, high temperature storage was performed at 150 °C for 10, 100 and 1000 hours. Subsequently, the three point bending technique was carried out to obtain the micromechanical properties of semiconductor package. The fracture of the packages caused by three point bending test was subjected to 3D CT scan to capture the image of the fracture. Irradiated package shows the decreasing in their strength with increasing doses of gamma radiation. However, the strength of the package was improved after high temperature storage for 10 hours and decreased as the storage period is extended. Further analysis exhibited that high temperature storage for 10 hours is reveal as good thermal treatment for package in radioactive environment application.

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