scholarly journals Intermetallic Phase on the Interface of Ag-Au-Pd/Al Structure

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hao-Wen Hsueh ◽  
Fei-Yi Hung ◽  
Truan-Sheng Lui ◽  
Li-Hui Chen ◽  
Kuan-Jen Chen
Keyword(s):  
High Temperature ◽  
Thin Layer ◽  
Current Density ◽  
Electrical Resistance ◽  
Intermetallic Phase ◽  
Hexagonal Structure ◽  
Bonding Interface ◽  
Main Phase ◽  
High Temperature Storage ◽  
Temperature Storage

Three wires, Au, Cu, and Ag-Au-Pd, were bonded on an Al pad, inducing IMC growth by a 155 hr high temperature storage (HTS) so that the electrical resistance was increased and critical fusing current density (CFCD) decreased. Observations of the Ag-Au-Pd wire after HTS (0–1000 hr) indicated that IMC between the Ag-Au-Pd wire and Al Pad was divided into three layers: Ag2Al layers above and below the bonding interface and a polycrystal thin layer above the total IMC. A high percentage of Pd and Au existed in this 200 nm thin layer, and could suppress Al diffusion into the Ag matrix to inhibit IMC growth. After PCT-1000 hr, a noncontinuous structure still remained between the IMC layer and interface, and the main phase of IMC was (Ag, Au, Pd)2Al with a hexagonal structure.

scholarly journals Experimental and Theoretical Studies of Cu-Sn Intermetallic Phase Growth During High-Temperature Storage of Eutectic SnAg Interconnects

2020 ◽  
Vol 49 (12) ◽  
pp. 7194-7210
Author(s):  
A. Morozov ◽  
A. B. Freidin ◽  
V. A. Klinkov ◽  
A. V. Semencha ◽  
W. H. Müller ◽  
...  
Keyword(s):  
High Temperature ◽  
Chemical Reactions ◽  
Intermetallic Phase ◽  
Solder Bumps ◽  
High Temperature Storage ◽  
Theoretical Predictions ◽  
Reaction Constant ◽  
Experimental Findings ◽  
Microelectronic Components ◽  
Temperature Storage

AbstractIn this paper, the growth of intermetallic compound (IMC) layers is considered. After soldering, an IMC layer appears and establishes a mechanical contact between eutectic tin-silver solder bumps and Cu interconnects in microelectronic components. Intermetallics are relatively brittle in comparison with copper and tin. In addition, IMC formation is typically based on multi-component diffusion, which may include vacancy migration leading to Kirkendall voiding. Consequently, the rate of IMC growth has a strong implication on solder joint reliability. Experiments show that the intermetallic layers grow considerably when the structure is exposed to heat. Mechanical stresses may also affect intermetallic growth behavior. These stresses arise not only from external loadings but also from thermal mismatch of the materials constituting the joint, and from the mismatch produced by the change in shape and volume due to the chemical reactions of IMC formation. This explains why in this paper special attention is being paid to the influence of stresses on the kinetics of the IMC growth. We develop an approach that couples mechanics with the chemical reactions leading to the formation of IMC, based on the thermodynamically sound concept of the chemical affinity tensor, which was recently used in general statements and solutions of mechanochemistry problems. We start with a report of experimental findings regarding the IMC growth at the interface between copper pads and tin based solder alloys in different microchips during a high temperature storage test. Then we analyze the growth kinetics by means of a continuum model. By combining experiment, theory, and a comparison of experimental data and theoretical predictions we finally find the values of the diffusion coefficient and an estimate for the chemical reaction constant. A comparison with literature data is also performed.

Micro-Structural Studies of Thermosonic Cu-Al Bonding Interface

2014 ◽  
Vol 925 ◽  
pp. 154-158 ◽  
Author(s):  
T. Joseph Sahaya Anand ◽  
Chua Kok Yau ◽  
A. Jalar
Keyword(s):  
High Temperature ◽  
Grain Boundary ◽  
Copper Wire ◽  
Semiconductor Industry ◽  
Void Formation ◽  
Scanning Transmission Electron Microscope ◽  
Layer Growth ◽  
Bonding Interface ◽  
High Temperature Storage ◽  
Temperature Storage

Thermosonic Copper (Cu) wire interconnection has been under an extensive research and development to replace expensive Gold (Au) wire material in the semiconductor industry. However, a reliability concern is raised due to void formation at the bonding interface of Copper wire-Aluminum bond pad (Cu-Al) after High Temperature Storage (HTS) annealing condition. It is believed that the Intermetallic Compound (IMC) layer growth and evolution lead to a volumetric shrinkage which in turn results in the void formation. Annealing conditions influence the development of the IMC at the bonding interface which is related to the bonding reliability. In this work, the effects of annealing toward the micro-structure and IMC growth at the bonding interface were evaluated using Scanning Transmission Electron Microscope equipped with Energy Dispersive X-ray analysis. In the as-synthesized sample bonded at 100°C, an inhomogeneous IMC formation dominated by grain boundary diffusion was observed. After High Temperature Storage of 1000 hours, the consumption of the Al bond pad resulted in the formation of irregular IMC layers. The variation of phases existed in a localized region was believed due to simultaneous growth of IMC by both grain boundary and volume diffusions. Moreover, the diffusion of Cu into Si was observed. This resulted in the formation of the mixture of Si + η phases in the affected sea region.

High temperature storage reliability investigation of the Al–Cu wire bond interface

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1966-1970 ◽  
Author(s):  
R. Pelzer ◽  
M. Nelhiebel ◽  
R. Zink ◽  
S. Wöhlert ◽  
A. Lassnig ◽  
...  
Keyword(s):  
High Temperature ◽  
Wire Bond ◽  
High Temperature Storage ◽  
Bond Interface ◽  
Temperature Storage

High Temperature Storage and Gamma Radiation Effects on Mechanical Properties of Stacked Die Package

2014 ◽  
Vol 895 ◽  
pp. 567-570
Author(s):  
Azman Jalar ◽  
Wan Yusmawati Wan Yusoff ◽  
Norinsan Kamil Othman ◽  
Irman Abdul Rahman
Keyword(s):  
High Temperature ◽  
Gamma Radiation ◽  
Radiation Effects ◽  
Storage Period ◽  
Bending Test ◽  
Three Point Bending ◽  
Micromechanical Properties ◽  
3D Ct Scan ◽  
High Temperature Storage ◽  
Temperature Storage

Effect of gamma radiation (1.33 MeV) and high temperature storage of semiconductor package towards micromechanical properties has been investigated. The in-house fabricated Quad Flat No Lead was exposed to gamma radiation with the dose of 5 Gy. Afterwards, high temperature storage was performed at 150 °C for 10, 100 and 1000 hours. Subsequently, the three point bending technique was carried out to obtain the micromechanical properties of semiconductor package. The fracture of the packages caused by three point bending test was subjected to 3D CT scan to capture the image of the fracture. Irradiated package shows the decreasing in their strength with increasing doses of gamma radiation. However, the strength of the package was improved after high temperature storage for 10 hours and decreased as the storage period is extended. Further analysis exhibited that high temperature storage for 10 hours is reveal as good thermal treatment for package in radioactive environment application.

Sign in / Sign up

Export Citation Format

Share Document