Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects

AbstractHere, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >106 s at 100 °C under a continuous DC stress of 3 MA cm−2. Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).

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Selective deposition and luminescence characterization of Eu-doped Y[sub 2]O[sub 3] nanoparticles by microwave plasma synthesis

Journal of the Society for Information Display ◽

10.1889/1.1985222 ◽

1998 ◽

Vol 6 (3) ◽

pp. 143 ◽

Cited By ~ 4

Author(s):

P. D. Milewski ◽

S. K. Streiffer ◽

A. I. Kingon ◽

I. K. Shmagin ◽

R. M. Kolbas ◽

...

Keyword(s):

Microwave Plasma ◽

Plasma Synthesis ◽

Selective Deposition ◽

Microwave Plasma Synthesis

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Electromigration failure mode concerning negative resistance shift of Cu interconnects buried in porous low-k dielectric

Applied Physics Letters ◽

10.1063/1.4976738 ◽

2017 ◽

Vol 110 (8) ◽

pp. 083502 ◽

Cited By ~ 2

Author(s):

Hui Zheng ◽

Binfeng Yin ◽

Hewei Yu ◽

Leigang Chen ◽

Lin Gao ◽

...

Keyword(s):

Failure Mode ◽

Negative Resistance ◽

Cu Interconnects ◽

Low K

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Laser selective deposition of III–V compounds on GaAs and Si substrates

Journal of Crystal Growth ◽

10.1016/0022-0248(86)90306-4 ◽

1986 ◽

Vol 77 (1-3) ◽

pp. 229-234 ◽

Cited By ~ 28

Author(s):

S.M. Bedair ◽

J.K. Whisnant ◽

N.H. Karam ◽

D. Griffis ◽

N.A. El-Masry ◽

...

Keyword(s):

Selective Deposition ◽

Si Substrates

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Potential‐Selective Deposition of Copper from Chloride Solutions Containing Iron

Journal of The Electrochemical Society ◽

10.1149/1.2133381 ◽

1977 ◽

Vol 124 (5) ◽

pp. 669-676 ◽

Cited By ~ 13

Author(s):

Ralph White ◽

James A. Trainham ◽

John Newman ◽

Thomas W. Chapman

Keyword(s):

Selective Deposition ◽

Chloride Solutions

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Integration and performances of an alternative approach using copper silicide as a self-aligned barrier for 45 nm technology node Cu interconnects

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) ◽

10.1109/iitc.2004.1345667 ◽

2004 ◽

Cited By ~ 4

Author(s):

L.G. Gosset ◽

S. Chhun ◽

A. Farcy ◽

N. Casanova ◽

V. Arnal ◽

...

Keyword(s):

Copper Silicide ◽

Technology Node ◽

Cu Interconnects ◽

Alternative Approach

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Resistive Switching Characteristics in TiO2 ReRAM with Top Electrode of Co Selectively Formed on SAMs Printed Patterns

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.603 ◽

2007 ◽

Vol 124-126 ◽

pp. 603-606

Author(s):

Sang Hee Won ◽

Seung Hee Go ◽

Jae Gab Lee

Keyword(s):

Resistive Switching ◽

Random Access ◽

Atomic Layer ◽

High Resistance State ◽

Resistive Random Access Memory ◽

Tio2 Thin Films ◽

Selective Deposition ◽

Precise Control ◽

Resistance State ◽

Switching Characteristics

Simple process for the fabrication of Co/TiO2/Pt resistive random access memory, called ReRAM, has been developed by selective deposition of Co on micro-contact printed (μ-CP) self assembled monolayers (SAMs) patterns. Atomic Layer Deposition (ALD) was used to deposit TiO2 thin films, showing its ability of precise control over the thickness of TiO2, which is crucial to obtain proper resistive switching properties of TiO2 ReRAM. The fabrication process for Co/TiO2/Pt ReRAM involves the ALD of TiO2 on sputter-deposited Pt bottom electrode, followed by μ-CP with SAMs and then selective deposition of Co. This results in the Co/TiO2/Pt structure ReRAM. For comparison, Pt/TiO2/Pt ReRAM was produced and revealing the similar switching characteristics as that of Co/TiO2/Pt, thus indicating the feasibility of Co replacement with Pt top electrode. The ratios between the high-resistance state (Off state) and the low-resistance state (On state) were larger than 102. Consequently, the selective deposition of Co with μ-CP, newly developed in this study, can simplify the process and thus implemented into the fabrication of ReRAM.

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