Population inversion between the quantum confinement levels in quantum wells under resonant interband photoexcitation

2021 ◽  
Author(s):  
S.V. Egorov ◽  
A.G. Petrov ◽  
A.N. Baranov ◽  
A.O. Zakhar'in ◽  
A.V. Andrianov
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Population Inversion

Feasibility Of Novel Si-Based Interminiband Lasers

1998 ◽  
Vol 533 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Population Inversion ◽  
Heavy Hole ◽  
Optical Gain ◽  
Laser Structure ◽  
Strained Si ◽  
Superlattice Structures ◽  
A Current

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

FIELD-INDUCED QUANTUM INTERFERENCE IN SEMICONDUCTOR QUANTUM WELLS FOR LASING WITHOUT POPULATION INVERSION AND ELECTROMAGNETICALLY INDUCED TRANSPARENCY

1995 ◽  
Vol 04 (02) ◽  
pp. 261-282 ◽  
Author(s):  
Y. ZHAO ◽  
D. HUANG ◽  
C. WU
Keyword(s):  
Quantum Wells ◽  
Quantum Interference ◽  
Population Inversion ◽  
Electromagnetically Induced Transparency ◽  
Random Phase ◽  
Nonlinear Susceptibility ◽  
Double Quantum ◽  
Single Quantum Well ◽  
Semiconductor Quantum Wells ◽  
Induced Transparency

This paper presents the current results of field-induced quantum interference in semiconductor quantum wells. Three-level systems with two conduction subbands in single and double quantum wells coupled by a resonant field are studied. We investigate effects of the Coulomb and field-induced electronic renormalizations of the energy subbands and steady eigenstates of electrons. The random-phase and ladder approximations have been used to calculate the linear interband and intersubband optical absorptions and refractive indices. The effect of collective dipole moment on the nonlinear susceptibility has been incorporated into the study by using a local-field approach. Lasing without population inversion, electromagnetically induced transparency, and enhanced nonlinearity with reduced absorption inside the intersubband-coupled single quantum well and dc-field coupled double quantum wells are found.

Field‐induced broadening of optical absorption in InP‐based quantum wells with strong and weak quantum confinement

1994 ◽  
Vol 65 (12) ◽  
pp. 1540-1542 ◽  
Author(s):  
Takayuki Yamanaka ◽  
Koichi Wakita ◽  
Kiyoyuki Yokoyama
Keyword(s):  
Optical Absorption ◽  
Quantum Wells ◽  
Quantum Confinement

GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS: OPTICAL PROPERTIES ENGINEERING AND APPLICATION

2007 ◽  
Vol 06 (05) ◽  
pp. 315-318 ◽  
Author(s):  
A. A. KOVALYOV ◽  
O. P. PCHELYAKOV ◽  
V. V. PREOBRAZHENSKII ◽  
M. M. PUTYATO ◽  
N. N. RUBTSOVA ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Multiple Quantum Wells ◽  
Saturable Absorption ◽  
Multiple Quantum ◽  
Transmission Spectra ◽  
Single Quantum Well ◽  
Mbe Growth ◽  
High Reflection

MBE growth of GaSb / InGaAsSb / GaSb heterostructures of high crystal quality is performed under continual RHEED control. Transmission spectra of the films forming multiple quantum wells in λ ≈ 2–3 μm region confirm possibility to control optical properties of the structures through quantum confinement and through the content of semiconductor elements. New design of saturable absorption semiconductor mirror (SESAM) for Cr 2+: ZnSe laser is proposed and manufactured on the base of the single quantum well GaSb / InGaAsSb / GaSb placed between dielectric antireflection and broadband high reflection coatings.

EXCITED STATE PHOTOLUMINESCENCE IN STEPPED InGaAs/AlGaAs QUANTUM WELLS UNDER PICOSECOND EXCITATION

2003 ◽  
Vol 02 (06) ◽  
pp. 427-435
Author(s):  
V. A. SHALYGIN ◽  
L. E. VOROBJEV ◽  
V. Yu. PANEVIN ◽  
D. A. FIRSOV ◽  
S. HANNA ◽  
...  
Keyword(s):  
Excited State ◽  
Quantum Wells ◽  
Special Interest ◽  
Population Inversion ◽  
Auger Recombination ◽  
Stimulated Emission ◽  
Energy Structure ◽  
Electron Hole ◽  
Picosecond Excitation ◽  
Electron Energy Structure

The technique of photoluminescence (PL) studies based on intense picosecond excitation of electron–hole pairs is applied to investigate the electron energy structure including the positions of high-lying excited levels in stepped quantum wells (QWs). The spectra of PL in regimes of spontaneous and stimulated emission are studied under different excitation levels and light polarizations. Of special interest are intense photoluminescence signals from excited subbands. The feasibility of a e3–e2 intersubband population inversion in stepped QWs is demonstrated and the influence of Auger recombination was examined.

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