Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs

2014 ◽  
Author(s):  
Matteo Meneghini ◽  
Isabella Rossetto ◽  
Davide Bisi ◽  
Antonio Stocco ◽  
Andrea Cester ◽  
...  
Keyword(s):  
Trap States ◽  
Current Collapse ◽  
Gan Hemts

Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations

2002 ◽  
Vol 194 (2) ◽  
pp. 447-451 ◽  
Author(s):  
T. Mizutani ◽  
Y. Ohno ◽  
M. Akita ◽  
S. Kishimoto ◽  
K. Maezawa
Keyword(s):  
Current Collapse ◽  
Gan Hemts

A study on current collapse in AlGaN/GaN HEMTs induced by bias stress

2003 ◽  
Vol 50 (10) ◽  
pp. 2015-2020 ◽  
Author(s):  
T. Mizutani ◽  
Y. Ohno ◽  
M. Akita ◽  
S. Kishimoto ◽  
K. Maezawa
Keyword(s):  
Bias Stress ◽  
Current Collapse ◽  
Gan Hemts

The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS

2002 ◽  
Vol 46 (12) ◽  
pp. 2185-2190 ◽  
Author(s):  
B Luo ◽  
R.M Mehandru ◽  
Jihyun Kim ◽  
F Ren ◽  
B.P Gila ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Layer Structure ◽  
Gan Hemts

Recent Reliability Progress of GaN HEMT Power Amplifiers

2012 ◽  
Vol 1432 ◽  
Author(s):  
Toshihiro Ohki ◽  
Masahito Kanamura ◽  
Yoichi Kamada ◽  
Kozo Makiyama ◽  
Yusuke Inoue ◽  
...  
Keyword(s):  
High Efficiency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Device Structure ◽  
Passivation Film ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Specific Device ◽  
Gan Hemts ◽  
A Current

ABSTRACTIn this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure of GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer were used to suppress the trap-related phenomena, such as a current collapse. Gate edge oxidation is effective for reducing the gate leakage current. A Ta-based barrier metal was inserted between an ohmic electrode and interconnection metal for preventing increase in contact resistance. SiN of passivation film was optimized for reducing the current collapse of short-gatelength HEMTs.

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