In situ Silane Surface Passivation for Gate-First Undoped AlGaN/GaN HEMTs with Minimum Current Collapse and High-Permittivity Dielectric

2010 ◽  
Author(s):  
X. Liu ◽  
H. C. Chin ◽  
E. K. F. Low ◽  
W. Liu ◽  
L. S. Tan ◽  
...  
Keyword(s):  
Surface Passivation ◽  
High Permittivity ◽  
Current Collapse ◽  
Gan Hemts

Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations

2002 ◽  
Vol 194 (2) ◽  
pp. 447-451 ◽  
Author(s):  
T. Mizutani ◽  
Y. Ohno ◽  
M. Akita ◽  
S. Kishimoto ◽  
K. Maezawa
Keyword(s):  
Current Collapse ◽  
Gan Hemts

Surface Passivation of Bare Aluminum Nanoparticles using Perfluoroalkyl Carboxylic Acids

2003 ◽  
Vol 800 ◽  
Author(s):  
R. Jason Jouet ◽  
Andrea D. Warren ◽  
David M. Rosenberg ◽  
Victor J. Bellitto
Keyword(s):  
Composite Material ◽  
Surface Passivation ◽  
Catalytic Decomposition ◽  
Self Assembled Monolayers ◽  
Aluminum Nanoparticles ◽  
Wet Chemistry ◽  
Al Nanoparticles ◽  
Polar Organic Solvents ◽  
Assembled Monolayers

AbstractSurface passivation of unpassivated Al nanoparticles has been realized using self assembled monolayers (SAMs). Nanoscale Al particles were prepared in solution by catalytic decomposition of H3Al•NMe3 or H3Al•N(Me)Pyr by Ti(OiPr)4 and coated in situ using a perfluoroalkyl carboxylic acid SAM. Because the Al particles are prepared using wet chemistry techniques and coated in solution, they are free of oxygen passivation. This SAM coating passivates the aluminum and seems to prevent the oxidation of the particles in air and renders the composite material, to some extent, soluble in polar organic solvents such as diethyl ether. Characterization data including SEM, TEM, TGA, and ATR-FTIR of prepared materials is presented.

Wide band frequency and in situ characterisation of high permittivity insulators (High-K) for H.F. integrated passives

2006 ◽  
Vol 83 (11-12) ◽  
pp. 2184-2188 ◽  
Author(s):  
T. Lacrevaz ◽  
B. Fléchet ◽  
A. Farcy ◽  
J. Torres ◽  
M. Gros-Jean ◽  
...  
Keyword(s):  
Wide Band ◽  
High Permittivity ◽  
Band Frequency ◽  
Integrated Passives ◽  
High K

Impact of In Situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

2022 ◽  
Author(s):  
Ding-Yuan Chen ◽  
Axel R Persson ◽  
Kai Hsin Wen ◽  
Daniel Sommer ◽  
Jan Gruenenpuett ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Untreated Sample ◽  
Pressure Chemical ◽  
Gan Hemts ◽  
Pre Treatment ◽  
The Impact

Abstract The impact on the performance of GaN HEMTs of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 minutes) were compared in terms of interface properties and device performance. A reduction of oxygen at the interface between SiN and epi-structure is detected by Scanning Transmission Electron Microscopy-Electron Energy Loss Spectroscopy measurements in the sample subjected to 10 minutes of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9 % (compared to 16% for the untreated sample), which is attributed to the reduction of oxygen at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 minutes significantly improves the current dispersion uniformity from 14.5 % to 1.9 %. The reduced trapping effects result in a high output power of 3.4 W/mm at 3 GHz (compared to 2.6 W/mm for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before low-pressure chemical vapor deposition of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.

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