Electrode processes in AMF-contact systems of medium voltage vacuum interrupters when switching the limiting current. A Review

Author(s):  
S.M. Shkol'nik
2009 ◽  
Vol 74 (11-12) ◽  
pp. 1757-1776 ◽  
Author(s):  
Petr Zuman

To develop a reliable electroanalytical method, it is essential to understand – at least in principle – the nature of physical and chemical processes involved. DC polarography is a useful tool in initial stages of elucidation of processes involving reductions and oxidations of organic compounds in aqueous solutions. Main information to be obtained involves: the number of reduction and oxidation steps, the number of electrons transferred in each step, the nature of the transport of electroactive species, the roles of fast, slower and slow chemical reactions (such as proton transfers or hydration–dehydration equilibria), in particular those preceding electron transfer and the structure of the electrolysis product. The used tools are: (i) Measurements of the limiting current and half-wave potentials and their dependence on composition of the supporting electrolyte; (ii) dependences on drop-time and scan-rate; (iii) product identification; (iv) comparison with structurally related compounds, experimentally and from literature. Examples of reductions of the following bonds are given. Single bonds: C–X (X = halides, OR, OH, NH2, SR), N–Y (Y = O, N, S), O–O, N–N, S–S. Double bonds: C=C, C=N, C=S, N=N, and also triple bonds: C≡C, C≡N. Examples of oxidations are those of phenols and of enediols. Anodic waves due to mercury salt formations are observed for thiols, urea and thiourea derivatives (barbiturates, thiobarbiturates), and dithiocarbamates. References are restricted to our work.


Author(s):  
J W Steeds ◽  
R Vincent

We review the analytical powers which will become more widely available as medium voltage (200-300kV) TEMs with facilities for CBED on a nanometre scale come onto the market. Of course, high performance cold field emission STEMs have now been in operation for about twenty years, but it is only in relatively few laboratories that special modification has permitted the performance of CBED experiments. Most notable amongst these pioneering projects is the work in Arizona by Cowley and Spence and, more recently, that in Cambridge by Rodenburg and McMullan.There are a large number of potential advantages of a high intensity, small diameter, focussed probe. We discuss first the advantages for probes larger than the projected unit cell of the crystal under investigation. In this situation we are able to perform CBED on local regions of good crystallinity. Zone axis patterns often contain information which is very sensitive to thickness changes as small as 5nm. In conventional CBED, with a lOnm source, it is very likely that the information will be degraded by thickness averaging within the illuminated area.


Author(s):  
J.L. Batstone ◽  
J.M. Gibson ◽  
Alice.E. White ◽  
K.T. Short

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.


The Analyst ◽  
2020 ◽  
Vol 145 (1) ◽  
pp. 122-131 ◽  
Author(s):  
Wanda V. Fernandez ◽  
Rocío T. Tosello ◽  
José L. Fernández

Gas diffusion electrodes based on nanoporous alumina membranes electrocatalyze hydrogen oxidation at high diffusion-limiting current densities with fast response times.


1979 ◽  
Vol 40 (C7) ◽  
pp. C7-465-C7-466
Author(s):  
L. I. Kiselevskii ◽  
N. Ya. Klygin ◽  
A. N. Makarevich ◽  
D. A. Soloviyanchik
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