Low-IRESET unipolar HfO2 RRAM and tunable resistive-switching mode via interface engineering

2011 ◽  
Author(s):  
Kuan-Liang Lin ◽  
Tuo-Hung Hou ◽  
Yao-Jen Lee ◽  
Jun-Hung Lin ◽  
Jhe-Wei Chang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interface Engineering ◽  
Switching Mode

Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin films

2013 ◽  
Vol 529 ◽  
pp. 430-434 ◽  
Author(s):  
Chun-Hung Lai ◽  
Chih-Yi Liu ◽  
Cheng-Hsing Hsu ◽  
Yi-Mu Lee ◽  
Jenn-Sen Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Bottom Electrode ◽  
Tio2 Thin Films ◽  
Switching Mode

Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory

Small ◽  
2017 ◽  
Vol 14 (2) ◽  
pp. 1702525 ◽  
Author(s):  
Xue-Feng Wang ◽  
He Tian ◽  
Hai-Ming Zhao ◽  
Tian-Yu Zhang ◽  
Wei-Quan Mao ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Voltage ◽  
Pd Nanoparticles ◽  
Hybrid Structure ◽  
Interface Engineering ◽  
Resistive Switching Memory ◽  
Switching Memory

INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES

2011 ◽  
Vol 01 (02) ◽  
pp. 141-162 ◽  
Author(s):  
SHENG-YU WANG ◽  
TSEUNG-YUEN TSENG
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Random Access ◽  
Metal Electrode ◽  
Interface Layer ◽  
Digital Data ◽  
Interface Engineering ◽  
Device Structure ◽  
Ongoing Research ◽  
Operation Speed

Electric-induced resistive switching effects have attracted wide attention for future nonvolatile memory applications known as resistive random access memory (RRAM). RRAM is one of the promising candidates because of its excellent properties including simple device structure, high operation speed, low power consumption and high density integration. The RRAM devices primarily utilize different resistance values to store the digital data and can keep the resistance state without any power. Recent advances in the understanding of the resistive switching mechanism are described by a thermal or electrochemical redox reaction near the interface between the oxide and the active metal electrode. This paper reviews the ongoing research and development activities on the interface engineering of the RRAM devices. The possible switching mechanisms for the bistable resistive switching are described. The effects of formation, composition and thickness of the interface layer on the resistive switching characteristics and consequently the memory performance are also discussed.

scholarly journals Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1049
Author(s):  
Nayan C. Das ◽  
Minjae Kim ◽  
Jarnardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Magnesium Fluoride ◽  
Data Retention ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Operational Characteristics ◽  
Switching Mode ◽  
Limited Conduction ◽  
Resistive Switching Mechanism

Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 102 and good data retention of >104 s. The resistive switching mechanism in the Ti/MgFx/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgFx layer. In addition, filamentary switching mode at the interface between the MgFx and Ti layers is assisted by O–H group-related defects on the surface of the active layer.

Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering

2016 ◽  
Vol 28 (5) ◽  
pp. 055204 ◽  
Author(s):  
Zongwei Wang ◽  
Jian Kang ◽  
Zhizhen Yu ◽  
Yichen Fang ◽  
Yaotian Ling ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Interface Engineering ◽  
Resistive Switching Behavior

Tailoring the switching performance of resistive switching SrTiO3 devices by SrO interface engineering

2018 ◽  
Vol 325 ◽  
pp. 247-250 ◽  
Author(s):  
F.V.E. Hensling ◽  
T. Heisig ◽  
N. Raab ◽  
C. Baeumer ◽  
R. Dittmann
Keyword(s):  
Resistive Switching ◽  
Interface Engineering ◽  
Switching Performance

Polarity dependence of forming step on improved performance in Ti/HfOx/W with dual resistive switching mode

2013 ◽  
Vol 112 ◽  
pp. 157-162 ◽  
Author(s):  
Pang-Shiu Chen ◽  
Yu-Sheng Chen ◽  
Kan-Hsueh Tsai ◽  
Heng-Yuan Lee
Keyword(s):  
Resistive Switching ◽  
Improved Performance ◽  
Switching Mode
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