scholarly journals Optimized Design of Low Voltage High Current Ferrite Planar Inductor for 10 MHz On-chip Power Module

2008 ◽  
Vol 13 (2) ◽  
pp. 37-42 ◽  
Author(s):  
Seok Bae ◽  
Yang-Ki Hong ◽  
Jae-Jin Lee ◽  
Gavin Abo ◽  
Jeevan Jalli ◽  
...  
Keyword(s):  
Low Voltage ◽  
Optimized Design ◽  
High Current ◽  
Power Module ◽  
On Chip

scholarly journals 1.0 V-0.18 µm CMOS Tunable Low Pass Filters with 73 dB DR for On-Chip Sensing Acquisition Systems

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 563
Author(s):  
Jorge Pérez-Bailón ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Power Consumption ◽  
Dynamic Range ◽  
Low Voltage ◽  
Cutoff Frequency ◽  
Cmos Technology ◽  
Active Area ◽  
Current Steering ◽  
Low Pass ◽  
On Chip ◽  
Low Pass Filters

This paper presents a new approach based on the use of a Current Steering (CS) technique for the design of fully integrated Gm–C Low Pass Filters (LPF) with sub-Hz to kHz tunable cut-off frequencies and an enhanced power-area-dynamic range trade-off. The proposed approach has been experimentally validated by two different first-order single-ended LPFs designed in a 0.18 µm CMOS technology powered by a 1.0 V single supply: a folded-OTA based LPF and a mirrored-OTA based LPF. The first one exhibits a constant power consumption of 180 nW at 100 nA bias current with an active area of 0.00135 mm2 and a tunable cutoff frequency that spans over 4 orders of magnitude (~100 mHz–152 Hz @ CL = 50 pF) preserving dynamic figures greater than 78 dB. The second one exhibits a power consumption of 1.75 µW at 500 nA with an active area of 0.0137 mm2 and a tunable cutoff frequency that spans over 5 orders of magnitude (~80 mHz–~1.2 kHz @ CL = 50 pF) preserving a dynamic range greater than 73 dB. Compared with previously reported filters, this proposal is a competitive solution while satisfying the low-voltage low-power on-chip constraints, becoming a preferable choice for general-purpose reconfigurable front-end sensor interfaces.

scholarly journals Starter for Voltage Boost Converter to Harvest Thermoelectric Energy for Body-Worn Sensors

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4092
Author(s):  
Grzegorz Blakiewicz ◽  
Jacek Jakusz ◽  
Waldemar Jendernalik
Keyword(s):  
Threshold Voltage ◽  
Low Voltage ◽  
Boost Converter ◽  
Mos Transistors ◽  
Weak Inversion ◽  
Thermoelectric Energy ◽  
On Chip ◽  
Voltage Swing ◽  
High Output Voltage ◽  
High Output

This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip implementation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability of n-channel native MOS transistors with negative or near-zero threshold voltage in ULV oscillators is analyzed. The results demonstrate that a near-zero threshold voltage transistor operating in the weak inversion region is most advantageous for the considered application. The obtained results were used as a reference for design of a boost converter starter intended for integration in 180-nm CMOS X-FAB technology. In the selected technology, the most suitable transistor available with a negative threshold voltage was used. Despite using a transistor with a negative threshold voltage, a low startup voltage of 29 mV, a power consumption of 70 µW, and power conversion efficiency of about 1.5% were achieved. A great advantage of the proposed starter is that it eliminates a multistage charge pump necessary to obtain a voltage of sufficient value to supply the boost converter control circuit.

scholarly journals Synchronous Generator Rectification System Based on Double Closed-Loop Control of Backstepping and Sliding Mode Variable Structure

Electronics ◽  
2021 ◽  
Vol 10 (15) ◽  
pp. 1832
Author(s):  
Jinfeng Liu ◽  
Xin Qu ◽  
Herbert Ho-Ching Iu
Keyword(s):  
Closed Loop ◽  
Control Structure ◽  
Low Voltage ◽  
Sliding Mode ◽  
Variable Structure ◽  
Synchronous Generator ◽  
Closed Loop Control ◽  
High Current ◽  
Loop Control ◽  
Sliding Mode Variable Structure

Low-voltage and high-current direct current (DC) power supplies are essential for aerospace and shipping. However, its robustness and dynamic response need to be optimized further on some special occasions. In this paper, a novel rectification system platform is built with the low-voltage and high-current permanent magnet synchronous generator (PMSG), in which the DC voltage double closed-loop control system is constructed with the backstepping control method and the sliding mode variable structure (SMVS). In the active component control structure of this system, reasonable virtual control variables are set to obtain the overall structural control variable which satisfied the stability requirements of Lyapunov stability theory. Thus, the fast-tracking and the global adjustment of the system are realized and the robustness is improved. Since the reactive component control structure is simple and no subsystem has to be constructed, the SMVS is used to stabilize the system power factor. By building a simulation model and experimental platform of the 5 V/300 A rectification module based on the PMSG, it is verified that the power factor of the system can reach about 98.5%. When the load mutation occurs, the DC output achieves stability again within 0.02 s, and the system fluctuation rate does not exceed 2%.

A 12 to 1 V five phase interleaving GaN POL converter for high current low voltage applications

2014 ◽  
Author(s):  
Benjamin K. Rhea ◽  
Luke L. Jenkins ◽  
William E. Abell ◽  
Frank T. Werner ◽  
Christopher G. Wilson ◽  
...  
Keyword(s):  
Low Voltage ◽  
High Current

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

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